Abstract Colloidal carbon dots (CDs) have garnered much attention as metal‐free photoluminescent nanomaterials, yet creation of solid‐state fluorescent (SSF) materials emitting in the deep red (DR) to near‐infrared (NIR) range poses a significant challenge with practical implications. To address this and engineer photonic functionalities, micro‐resonator architecture is developed using carbonized polymer microspheres (CPMs), evolved from conventional colloidal nanodots. Gram‐scale production...

We report for the first time amplified spontaneous emission (ASE) and lasing from blue-emitting silicon nanoclusters. The threshold is determined as 1.8 mJ per pulse peaks at 434 nm.

<div class="section abstract"><div class="htmlview paragraph">An engine was built in this study that enabled the conditions a pre-chamber and main combustion chamber to be visualized simultaneously for purpose of elucidating mechanism combustion. An investigation made how state combustion, including location initial flame generation its subsequent propagation, influenced jet The intentionally varied by changing position ignition. As result, it found ignition where occurred,...

Here we report for the first time highly flexible quantum dot light-emitting diodes (QLEDs), in which a layer of red-emitting colloidal silicon dots (SiQDs) works as optically active component, by replacing rigid glass substrate with thin sheet polyethylene terephthalate (PET). The enhanced optical performance electroluminescence (EL) at room temperature air is achieved taking advantage inverted device structure. Our QLEDs do not exhibit parasitic EL emissions from neighboring compositional...

Herein, an enhanced electroluminescence (EL) performance of solution-processed silicon quantum dot light-emitting diodes (Si-QLEDs) is demonstrated. We prepared colloidal inks dots (Si QDs) for light-emissive layers using thermal hydrosilylation 1-decene on their hydrogen-terminated surfaces, which are provided by disproportionation triethoxysilane hydrolyzed at pH 3 and subsequent hydrofluoric etching. The QLEDs have inverted device architecture with multilayers. color can be tailored from...

Halide perovskites stand out as promising materials for the realization of high-performance photodetectors. However, inherent instability and lead toxicity are still obstacles facing wide practical application In this work, first highly responsive lead-free perovskite photodiode based on Cs2Ag0.35Na0.65InCl6 nanocrystals (NCs) is demonstrated. The composition tuning strategy introduced to enhance device performance photodiodes. Employed with a structure composed ZnO:Al electron-transport...

In this paper, the authors studied anatase TiO2 films, fabricated by using atomic layer deposition and postdeposition annealing (PDA). The as-grown films were of high purity; carbon nitrogen contents within x-ray photoelectron spectroscopy detection limit 3–5 at. %. film PDA at 500 °C in O2 had a very dielectric constant >30 was quality because it exhibited no hysteresis its flatband voltage (Vfb) contained negligible defect charge. positive Vfb shift (0.08 V), caused bottom interface...

Silicon quantum dots (Si QDs) have recently attracted attention in clinical imaging technology owing to their nontoxicity living cells and tissues. Here, we investigate the size-dependent photothermal effect of hydrogen-terminated Si QDs, which provides a common surface for further functionalization biocompatibility. Three samples QDs with diameters 2.2, 3.8, 4.7 nm were prepared by thermal disproportionation reaction triethoxysilane hydrolyzed at pH 3 subsequent hydrofluoric etching. The...

Biomedical applications rely on semiconductor quantum dots (QDs) exhibiting electroluminescence (EL) properties in the wavelength range between 1.0 and 1.7 μm (called second near-infrared window, NIR-II). However, developing heavy-metal-free QDs remains a challenge. Herein, we report, for first time, colloidal silicon QD light-emitting diode (Si-QLED), which exhibits an EL spectrum with peak at along high external efficiency (EQE) value of 4.84%, is close to record among reported NIR-II...

Multicomponent oxide phosphors such as Mn-activated CaO–Ga 2 O 3 are demonstrated to be very promising the thin-film emitting layer for electroluminescent (TFEL) devices. The EL emission color from :Mn TFEL devices changed green orange CaO content was increased 0 100 mol%. A Ga device driven at 1 kHz produced a with luminance of 232 cd/m . yellow 1725 and 261 obtained in using CaGa 4 thin film prepared 50 mol%, when 60 Hz, respectively.

Solution-processed, cadmium-free quantum dot (QD) photodiodes are compatible with printable optoelectronics and regarded as a potential candidate for wavelength-selective optical sensing. However, slow response time resulting from low carrier mobility poor dissociation of charge carriers in the optically active layer has hampered development QD nontoxic device constituents. Herein, we report first InP-based photodiode multilayer architecture, working photovoltaic mode circuits. The showed...

Here we report a quantum dot light emitting diode (QLED), in which layer of colloidal silicon dots (SiQDs) works as the optically active component, exhibiting strong electroluminescence (EL) spectrum peaking at 620 nm. We could not see any fluctuation EL spectral peak, even air, when operation voltage varied range from 4 to 5 V because possible advantage inverted device structure. The pale-orange was narrow 95 Interestingly, narrower than corresponding photoluminescence (PL) spectrum....

Despite bulk crystals of silicon (Si) being indirect bandgap semiconductors, their quantum dots (QDs) exhibit the superior photoluminescence (PL) properties including high yield (PLQY > 50%) and spectral tunability in a broad wavelength range. Nevertheless, low optical absorbance character inhibits bright emission from SiQDs for phosphor-type light emitting diodes (LEDs). In contrast, strong electroluminescence is potentially given by serving as an emissive layer current-driven LEDs with...

Semiconductor p‐n homojunction is a requisite building block of operating transistors and diodes which make up the modern electronic circuits optoelectronic applications. However, it has been so far limited to bulk form single crystals such as silicon (Si) or gallium arsenide. Herein, brand‐new method constructing architectures that breaks through limitation presented. Colloidal inks p‐type n‐type Si quantum dots (QDs) are synthesized by thermal disproportionation (HSiO 1.5 ) n doped with...

Abstract High‐luminance thin‐film electroluminescent devices have been newly developed using Mn‐activated multicomponent oxide phosphors. Multicolor emission was obtained by changing the composition of CaO:Mn‐Ga 2 O 3 :Mn phosphor; luminances 2790 and 592 cd/m for yellow were in a device phosphor with CaO:Mn content 50 molar%, when driven at 1 kHz 60 Hz, respectively. Luminance 4220 809 green Zn SiO 4 :Mn‐Zn GeO 25 mol%, A high driving frequency has demonstrated effective TFEL devices.

The possibility of practical thin-film electroluminescent (TFEL) displays using oxide phosphor emitting layers has been investigated with a single-insulating-layer device structure thick insulating ceramic sheet. Highluminance TFEL devices rare earth- or transition metal-activated phosphors consisting binary, ternary and multicomponent compounds are demonstrated. It is concluded that very promising as layer materials for devices, because they can exhibit EL characteristics comparable those...

Abstract— This paper reports on attempts to control the color coordinate of green emission from TFEL devices by varying composition multicomponent oxide phosphors in host materials. In using composed combinations ZnGa 2 O 4 : Mn, ZnAl and MgGa substitution group‐III element sites rather than that group‐II is more effective for green‐color‐coordinate control. As Zn(Ga z Al 1−z ) Mn or Mg Zn (Ga )O phosphors, EL spectra could also be controlled; consequently, CIE chromaticity changed....