A5054430714- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Thermal properties of materials
- Ferroelectric and Negative Capacitance Devices
- 2D Materials and Applications
- Graphene research and applications
- Silicon Carbide Semiconductor Technologies
- Nanowire Synthesis and Applications
Indian Institute of Technology Roorkee
2022-2024
This paper presents compact models of GAA, MRAM, ferroelectric logic, and memory devices, as well cryogenic CMOS that supports quantum computing. These achieve microseconds fast simulation the charge current devices using analytical functions solutions to complex device physics problems aided by adjustable parameters. Though not predictive TCAD, each model can simulate characteristics manufacturing variabilities accurately much faster. Early availability emerging is a necessity for...
In this work, a compact model for parasitic capacitances is proposed Gate-All-Around silicon nanosheet FET (GAAFET). For 3 stack GAAFET, all possible capacitance components are included according to the electric field lines and geometric structure of device. Conformal mapping Schwarz Christoffel transforms as well elliptic integral methods used perpendicular coplanar plate capacitance. We have also fundamental modeling calculate corner The validity calibrated verified with 3D TCAD...
In this paper, we present a physics-based core compact model for two-dimensional (2D) molybdenum disulfide (MoS <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> ) channel material-based FET. The FET characteristics have been studies using ab-initio simulations as well experimental data. is derived from closed-form solutions of Poisson's equation considering 2D density states and Fermi-Dirac statistics along with drift-diffusion transport...
Due to the better electrostatic control, semiconductor industry has already adopted gate-all-around FETs (GAAFETs) for upcoming technology nodes. Effects like sub-band quantization, threshold voltage shift, geometry-dependent density of states (DOS) etc., are predominant in terminal characteristics GAAFETs due strong geometrical confinement, which a significant impact on both analog and RF device. In this paper, first time we demonstrate corner rounding radius <tex...