A5060039652- Advancements in Semiconductor Devices and Circuit Design
- Semiconductor materials and devices
- Silicon Carbide Semiconductor Technologies
- Low-power high-performance VLSI design
- Ferroelectric and Negative Capacitance Devices
- Advanced Memory and Neural Computing
- Energy Efficient Wireless Sensor Networks
- Nanowire Synthesis and Applications
- Advanced DC-DC Converters
- Electrostatic Discharge in Electronics
- Integrated Circuits and Semiconductor Failure Analysis
- IoT-based Smart Home Systems
Technical University of Munich
2024
Indian Institute of Technology Kanpur
2021-2024
Silicon-based cold-source transistors are promising for energy-efficient logic switches and hence semiconductor technology node scaling due to their subthermal switching capability, good ON-state performance, compatibility with existing process technology. Owing the importance of compact models in advancing technology, we propose a model silicon-based dual-gate field-effect (DG-CSFETs). Our core is charge-based provides an explicit solution surface potential, terminal charges, drain current....
Due to the significant advancement of system-on-chip (SoC) based architectures in IC technology, FinFET-based laterally diffused MOS (LDMOS) FETs are crucial for integrating high-voltage (HV) devices with low-voltage (LV) digital systems. We have performed on-wafer characterization state-of-the-art production level 14-/16-nm LDMOS devices. Industry-standard FinFET's compact model Berkeley short-channel IGFET model-common multigate (BSIM-CMG) 111.1.0 cannot electrical characteristics these...
Modern SoCs require low-voltage core transistors with excellent digital, analog and RF properties, thick oxide for I/O buffers, high voltage devices effective power management. In this work, we present a complete DC to characterization, compact modeling strategy, model extraction of commercially fabricated low high-voltage FinFETs. The industry-standard BSIM-CMG is modified capture both frequency characteristics accurately. Furthermore, thoroughly compare the DC, analog, performance...
Ferroelectric Field-Effect Transistors (FeFETs) having the same structure as normal transistors are affected by self-heating. Consequently, there is a reduction in ON current and decrease sensing margin which increases probability of error for in-memory computing applications. In this paper, we have investigated first time how self-heating impacts reliability Fe-FinFET Fe-FDSOI-based systems. Our analysis unveils that devices more prone to effects compared Fe-FDSOI due channel confinement....
Cryogenic CMOS circuits are inevitable for deep space and Quantum Computing (QCs) applications. Analog such as amplifiers, comparators, ADC, DAC essential components of the CMOS-based cryogenic control circuits. The performance these highly depends on analog figures merits (FoMs) intrinsic transistors. Thus, first time, here, we present characterization FoMs 5 nm technology FinFETs from 400 K down to 10 K. We also compare characterized with previous generation technology-based transistors at...
Modern System-on-Chip (SoC) architectures necessitate low-voltage (LV) core transistors featuring excellent digital, analog, and radio frequency (RF) properties, as well thick oxide serving robust I/O buffers high-voltage (HV) essential for efficient power management. This study presents a comprehensive DC to RF characterization, detailed modeling strategy, subsequent model parameter extraction commercially produced LV HV Fin Field Effect Transistors (FinFETs) at 14/16 nm technology. The...
Cryogenic CMOS devices face the challenge of excessive self-heating (SH), which has emerged as a major concern for quantum computing (QC). This work is first to reveal impact SH in cryogenic circuits, from transistor level all way up processor level, using 28nm FDSOI technology. The heat generated interfacing circuits severely hinders lifetime qubits, are thermal noise-sensitive. To investigate on we extend industry-standard BSIM-IMG model incorporate physics-based temperature-specific...
This paper presents a physics-based model to capture the current-voltage (I-V) and capacitance-voltage (C-V) of multiple commercially available Silicon Carbide (SiC) MOSFETs. A charge-based core has been developed I-V characteristics devices. The parasitic charges capacitances are modeled empirically C-V kink in gatedrain capacitance <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$(C_{GD})$</tex> . To study trapping behavior, dual-pulse trap...
Due to the better electrostatic control, semiconductor industry has already adopted gate-all-around FETs (GAAFETs) for upcoming technology nodes. Effects like sub-band quantization, threshold voltage shift, geometry-dependent density of states (DOS) etc., are predominant in terminal characteristics GAAFETs due strong geometrical confinement, which a significant impact on both analog and RF device. In this paper, first time we demonstrate corner rounding radius <tex...
This paper presents a charge-based compact model for Silicon Carbide (SiC) power MOSFETs, which captures the static characteristics of device over wide range voltages and currents. The drift region resistance charges in channel have been formulated to calculate drain current self-consistent manner. proposed has validated against measured transfer output commercial 1.2kV MOSFET (Infineon IMW120R045M1) with maximum rating 52A.