A5040023626- Ferroelectric and Negative Capacitance Devices
- Semiconductor materials and devices
- MXene and MAX Phase Materials
- Advanced Memory and Neural Computing
- Advancements in Semiconductor Devices and Circuit Design
- Genetics and Plant Breeding
- Ferroelectric and Piezoelectric Materials
- Proteins in Food Systems
- Crop Yield and Soil Fertility
- Food composition and properties
- Nanocomposite Films for Food Packaging
- Particle Detector Development and Performance
- Plant nutrient uptake and metabolism
- Advanced Data Storage Technologies
- CCD and CMOS Imaging Sensors
- Multilevel Inverters and Converters
- Phytoestrogen effects and research
- Food Chemistry and Fat Analysis
- Polymer-Based Agricultural Enhancements
- Gyrotron and Vacuum Electronics Research
- Rough Sets and Fuzzy Logic
- 3D Shape Modeling and Analysis
- Adaptive Dynamic Programming Control
- Integrated Circuits and Semiconductor Failure Analysis
- Reinforcement Learning in Robotics
Taiyuan University of Technology
2025
University of Electronic Science and Technology of China
2024
Institute of Microelectronics
2019-2024
Chinese Academy of Sciences
2019-2024
University of Chinese Academy of Sciences
2019-2024
University of Notre Dame
2024
Northeast Agricultural University
2023-2024
Shanghai Micro Satellite Engineering Center
2022
State Key Laboratory on Integrated Optoelectronics
2022
Harbin Institute of Technology
2022
We investigate the charge trapping during endurance fatigue of FeFET with TiN/Hf <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</sub> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /SiO /Si (MFIS) gate structure. propose a method experimentally extracting number trapped charges memory operation, by measuring in metal and Si substrate. verify that amount increases process. This is first time are directly extracted verified to...
We study the impact of different interlayers (ILs) and ferroelectric materials on charge trapping during endurance fatigue Si field effect transistor (FeFET) with TiN/Hf<sub><i>x</i></sub>Zr<sub>1-<i>x</i></sub>O<sub>2</sub>/ interlayer/Si (MFIS) gate-stack. have fabricated FeFET devices (SiO<sub>2</sub> or SiON) Hf<sub><i>x</i></sub>Zr<sub>1-<i>x</i></sub>O<sub>2</sub> (<inline-formula> <tex-math notation="LaTeX">${x} =0.75$ </tex-math></inline-formula>, 0.6, 0.5) directly extracted...
The limited adjustable margin of the islanded AC/DC hybrid microgrid makes it difficult to both balance economic and stability. Therefore, an energy management strategy that can effectively harmonize stability is highly desirable. In view issues, this paper proposes a novel dual mode coupling for microgrid. sets two modes microgrid: emergency mode. A two-stage stochastic predictive control (SPC) dispatch model carried out operation in Furthermore, be switched according SOC (state charge)...
In this work, the switching dynamics of HfO <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$_{\text{2}}$</tex-math> </inline-formula> –ZrO nanolaminate ferroelectric (FE) films with different laminate thicknesses are investigated. Metal/FE layer/metal capacitors alternate cycle ratios <italic xmlns:xlink="http://www.w3.org/1999/xlink">n</i> ( notation="LaTeX">$=$</tex-math> 1, 8, 15, 25, and 37)...
We propose an in situ <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {th}}$ </tex-math></inline-formula> measurement method to investigate the endurance fatigue mechanism of Si ferroelectric field-effect transistor (FeFET) with HfZrO ferroelectric. The means that a pulsed current-voltage is embedded during quasi-static capacitance-voltage (QSCV) measurement. Based on this method, trapped...
The gate defect of the ferroelectric HfO2-based Si field-effect transistor (Si FeFET) plays a dominant role in its reliability issue. first-principles calculations are an effective method for atomic-scale understanding defects. However, study on defects FeFET stacks, i.e., metal/orthorhombic-Hf0.5Zr0.5O2/SiOx/Si structure, has not been reported so far. key challenge is construction stack models. Here, atomic structure and property orthorhombic-Hf0.5Zr0.5O2/SiO2/Si systematically studied by...
In this work, a consecutive random telegraph noise (RTN), characterized by gradual current decay after an abrupt spike as the time elapses, is firstly observed and further explored in advanced hafnium zirconium oxide (HZO) ferroelectric FinFETs (Fe-FinFETs). To elucidate novel RTN behavior with distribution of states, new model proposed, incorporating charge-coulomb interaction between local nanodomains traps. By implementing more deterministic FE polarization switching, disturbed variation...
This work investigates trap generation in gate stacks of ferroelectric field-effect transistor (FeFET) with TiN/Hf0.5Zr0.5O2/SiOx/Si structure during endurance fatigue by using the low-frequency noise method. We find that traps are generated not only at Hf0.5Zr0.5O2/SiOx interface but also both Hf0.5Zr0.5O2 and SiOx. Our provides evidence defect inside layer FeFET cycling. Furthermore, SiOx more detrimental to fatigue. And is important than its initial density for helpful deeply understanding FeFET.
Reliability issues are the last hurdle for hafnium-based FeFET to be adopted in practice. This work is focused on two key reliability issues: read-after-write delay and memory window degradation under bipolar pulse operation. Through advanced characterization, types of traps identified FeFET. Further investigation reveals that fast type interfacial layer slow ferroelectric layer. Due dramatically different properties trapping kinetics energy locations, they become roots these issues,...
We investigate charge trapping induced trap generation in Si ferroelectric field-effect transistor (FeFET) with Hf0.5Zr0.5O2/SiO2 gate stacks by split <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}$ </tex-math></inline-formula> – notation="LaTeX">${V}$ measurement. find that the recombination of electrons and holes within induces traps consequently results degradation endurance characteristics FeFET....
In this study, we investigate the impact of nitridation in Hf <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0.5</inf> Zr O xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> -based ferroelectric field-effect transistors (FeFETs) with a SiON interfacial layer. Compared SiOx interlayer, interlayer can reduce state density (Dit) at interlayer/Si interface, suppress degradation I xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> and subthreshold...
This work investigates the impact of mobility degradation on endurance fatigue a ferroelectric field-effect-transistor (FeFET) with TiN/Hf0.5Zr0.5O2/SiOx/Si (MFIS) gate structure. We use split capacitance–voltage (C–V) method to study carrier during program/erase cycling. find that significant occurs increasing cycle and further deteriorates characteristics. Our provides as another factor FeFET besides charge trapping trap generation, which is helpful for improvement.
We investigate the impact of saturated spontaneous polarization ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${P}_{\text {s}}{)}$ </tex-math></inline-formula> ferroelectric on endurance fatigue Si FeFET with Metal/Ferroelectric/Interlayer/Si (MFIS) gate structure. tune {s}}$ in range 25.9– notation="LaTeX">$6.4 \mu \text{C}$ /cm <sup xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> by changing...
Normal estimation is an essential task for scanned point clouds in various CAD/CAM applications. The method (GLSRNE) based on guided least squares representation (GLSR) balances speed with quality well among state-of-the-art methods. First, it segments each neighborhood into multiple sub-neighborhoods. For some neighborhoods, the segmentation obtained by GLSR which efficient subspace model and widely applied other of rest neighborhoods inferred via structure propagation (SSP) algorithm....
Abstract The HfO 2 -based Si ferroelectric field-effect transistor has been proposed as an emerging memory device due to its low write power, high speed, CMOS compatibility, and scalability. While the poor endurance limits application, which is attributed charge trapping defect generation. In this work, we investigate effect of minor loop operation on We find that using a operation, trap generation suppressed, quantitively extracted by low-frequency noise method. get 6 × 10 7 cycles for...
We theoretically calculate the electron mobility in silicon nanowire metal-oxide-semiconductor field-effect transistor. The calculation of is based on Kubo–Greenwood formulation and self-consistent solutions Schrödinger Poisson equations. Phonon scattering (PHS), Coulomb scattering, surface roughness (SRS) mechanisms are considered this study. nonlinear SRS model employed because it can reproduce experimental with realistic parameters. simulation demonstrates that PHS both vital mechanisms....
Recently, deep reinforcement learning (DRL)-based approach has shown promisein solving complex decision and control problems in power engineering domain.In this paper, we present an in-depth analysis of DRL-based voltage fromaspects algorithm selection, state space representation, reward engineering.To resolve observed issues, propose a novel imitation learning-based approachto directly map grid operating points to effective actions without any interimreinforcement process. The performance...
This work investigates the endurance characteristic of Si FeFET with Hf0.5Zr0.5O2 ferroelectric. A fully CMOS-compatible method is shown to improve endurance: insertion thin HfOx layer (~2–5Å) at Hf0.5Zr0.5O2/SiOx interface. The ab initio calculations prove that can increase formation energies oxygen vacancies and suppress their generation in gate stacks and, consequently, endurance. paves a possible path FeFET.