ZnO nanowires were grown between two Au electrodes on an Al2O3-deposited Si wafer. Photoresponse, photoresponse spectrum, and current–voltage (I–V) studies performed for the investigation into photoconduction mechanism in these nanowires. The of under continuous illumination light with above- or below-gap energies was slow, which indicates that photocurrent is surface-related rather than bulk-related. spectrum represents absorption bands photocurrents. I–V characteristics above-gap are...

Flexible electronic devices which are lightweight, thin and bendable have attracted increasing attention in recent years. In particular, solution processes been spotlighted the field of flexible electronics, since they provide opportunity to fabricate electronics using low-temperature at low-cost with high throughput. However, there few reports describe characteristics on substrates. this study, we fabricated thin-film transistors (TFTs) plastic substrates channel layers formed by...

Abstract In this study, we fabricate bendable solid-state supercapacitors with Au nanoparticle (NP)-embedded graphene hydrogel (GH) electrodes and investigate the influence of NP embedment on internal resistance capacitive performance. Embedding NPs into GH results in a decrease from 35 to 21 Ω, threefold reduction IR drop at current density 5 A/g when compared without NPs. The NP-embedded (NP-GH SCs) exhibit excellent performances, large specific capacitance (135 F/g) high energy (15.2...

Solutionp-type thin-film transistors, consisting of sol-gel-processed CuO films, were fabricated. The optoelectric properties sol-gel-processed, CuO-based back gate transistors investigated, and a detectivity 1.38 × 10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">11</sup> (cm Hz xmlns:xlink="http://www.w3.org/1999/xlink">1/2</sup> W xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> ) was achieved. This for is higher than that the previously...

In this study, we propose newly designed feedback field-effect transistors that utilize the positive of charge carriers in single-gated silicon channels to achieve steep switching behaviors. The band diagram, I-V characteristics, subthreshold swing, and on/off current ratio are analyzed using a commercial device simulator. Our proposed exhibit swings less than 0.1 mV dec-1, an approximately 1011, on-current 10-4 A at room temperature, demonstrating characteristics superior those other...

Abstract This paper demonstrates that thermal energy radiated from a human finger can be converted efficiently into electricity by nanocrystal (NC) thin film substantially suppresses conduction, but still allows electric conduction. The converting efficiencies of the chalcogenide NC films with dimensions 40 µm × 20 nm, prepared on flexible substrates solution process, are maximized adjusting size. A Seebeck coefficient S = 1829 µV K −1 , and dimensionless thermoelectric figure‐of‐merit, ZT...

Abstract Memory hierarchy among conventional memory technologies is one of the main bottlenecks in modern computer systems; alternative are thus necessary for quasi‐nonvolatile applications. Herein, a fully complementary metal‐oxide‐semiconductor‐compatible composed p + ‐n‐p‐n silicon on silicon‐on‐insulator substrate presented. The device demonstrates high‐speed write capability ( ≤ 100 ns), long retention time (100 s), and nondestructive read (1000 with high sensing current margin ≈ 10 9 )...

Abstract In this study, the logic‐in‐memory operations are demonstrated of ternary NAND and NOR logic gates consisting double‐gated feedback field‐effect transistors. The component transistors reconfigure their operation modes into n‐ or p‐channel by adjusting gate biases. highly symmetrical between these with an excellent on‐current ratio 1.03 enables three distinguishable stable levels in gates. Moreover, maintain states for several tens to hundreds seconds under zero‐bias condition. This...

Abstract Capacitorless two‐transistor (2T0C) dynamic random‐access memory (DRAM) cells comprising oxide thin‐film transistors (TFTs) show potential as low‐power and high‐density DRAM cells; however, the multiply–accumulate (MAC) operation using these is not yet realized. In this study, 2T0C amorphous indium–tin–gallium–zinc TFTs are fabricated for MAC operations. a cell, one transistor acts write other read transistor, whose gate capacitance corresponds to data storage capacitance. The have...

Stateful logic can perform operations and simultaneously stores computational results in memory devices. Most stateful bases algorithms have been studied using resistive random‐access Herein, full adders consisting of silicon p + –n–p–n diodes that exhibit switching functions through band modulation are demonstrated. A 1‐bit adder ten operates with sequential steps material implication NOR operations, its energy consumption per operation is 50.4 pJ. Row column a diode crossbar structure...

Resistance switching memory devices constructed on flexible plastic substrates via the spin-coating of titanium oxide solution were characterized in this study. The resistance device exhibited a ratio high to low states more than 102, and large was maintained even after 104 s. These characteristics are comparable those based films deposited Si substrates. Moreover, endurance investigated by means continuous substrate bending test revealed that negligibly changed up two hundred cycles. Its...

We propose a route to examine the thermal degradation of organic light-emitting diodes (OLEDs) with infrared (IR) imaging and impedance spectroscopy. Four different OLEDs tris (8-hydroxyquinolinato) aluminum are prepared in this study for analysis degradation. Our comparison electrical characteristics these reveals that real-time temperatures obtained from IR images clearly correlate properties lifetimes. The OLED poor shows fairly high temperature during operation considerably short...

This study demonstrates the fabrication and characterization of a flexible thermoelectric (TE) power generator composed silicon nanowires (SiNWs) fabricated by top‐down method discusses its strain‐dependence analysis. The Seebeck coefficients p‐ n‐type SiNWs used to form pn‐module are 156.4 −146.1 µV K −1 , respectively. maximum factors obtained as 8.79 8.87 mW (m 2 ) respectively, under convex bending 1.11%, respectively; these largest values among hitherto reported for SiNWs. dimensionless...

Abstract In this study, we propose a simple way to improve thermal stability of solid-state supercapacitors (SCs) by adding carbon black (CB) into reduced graphene oxide (rGO) electrodes. The CB used as heat-resistant additive contributes stable operation the rGO-CB SC even after 1000 charge/discharge cycles at 90 °C. case rGO without CB, it fails 166th Compared with SC, exhibits decrease in internal resistance from 42 18 Ω and increase specific capacitance 115 160 F/g. Moreover, shows...

In this work, the capacitance characteristics of gold nanoparticle-embedded metal–oxide-semiconductor (MOS) capacitors with Al2O3 control oxide layers are investigated. The versus voltage (C–V) curves obtained for a representative MOS capacitor embedded nanoparticles synthesized by colloidal method exhibit large flat-band shifts, which indicate presence charge storages in nanoparticles. Their hysteresis dependent on sweep range. clockwise and rightward shift flat band voltages observed from...

In this study, flexible transparent heaters with heating films made of indium tin oxide (ITO) are fabricated on plastic substrates. The optical transmittance a representative heater is above 90% in the visible and near infrared regions. steady-state temperature determined by bias voltage reaches about 180 degrees C at 50 V. heat-generating properties nearly same before after application tensile strain. Furthermore, defrosting ability demonstrated using block dry-ice.

We report luminescent characteristics and mechanical stability of a flexible organic light-emitting diode (FOLED) using an amorphous ZnO-doped In2O3 (a-IZO) anode with low sheet resistance high optical transparency 86%. The FOLED consisting a-IZO/poly(3,4-ethylenedioxythiophene) poly(styrenesulfonate) (PEDOT:PSS)/poly[(9,9-di-n-octylfluorenyl-2,7-diyl)-alt-(benzo[2,1,3]thiadiazol-4, 8-diyl)] (F8BT)/LiF/Al exhibits the efficient characteristics, which are nearly identical photoluminescence...