A5100350586- Advanced Memory and Neural Computing
- Perovskite Materials and Applications
- Conducting polymers and applications
- Transition Metal Oxide Nanomaterials
- Thin-Film Transistor Technologies
- Photoreceptor and optogenetics research
- Ferroelectric and Negative Capacitance Devices
- Quantum Dots Synthesis And Properties
- Neuroscience and Neural Engineering
- Advancements in Battery Materials
- Electrohydrodynamics and Fluid Dynamics
- Neutrophil, Myeloperoxidase and Oxidative Mechanisms
- Optical Systems and Laser Technology
- Hepatitis Viruses Studies and Epidemiology
- ZnO doping and properties
- Material Properties and Applications
- Viral Infections and Immunology Research
- Embedded Systems and FPGA Design
- Peroxisome Proliferator-Activated Receptors
- Ionic liquids properties and applications
- Energy and Environmental Systems
- Iterative Learning Control Systems
- Material Selection and Properties
- Physics of Superconductivity and Magnetism
- Structural Load-Bearing Analysis
Instituto de Tecnología Química
2024-2025
Consejo Superior de Investigaciones Científicas
2024-2025
Universitat Politècnica de València
2024-2025
Jeonbuk National University
2023-2025
Sungkyunkwan University
2016-2024
Korea Institute of Materials Science
2024
Universitat Jaume I
2023
Chungnam National University
2023
John Wiley & Sons (United States)
2023
Tohoku University
2022
Organic-inorganic halide perovskite materials exhibit excellent memristive properties, such as a high on/off ratio and low switching voltage. However, most studies have focused on Pb-based perovskites. Here, we report the resistive neuromorphic computing properties of Pb-free perovskite-related MA3Sb2Br9 (MA = CH3NH3). The Ag/PMMA/MA3Sb2Br9/ITO devices show forming-free characteristics due to self-formed conducting filament induced by metallic Sb present in as-prepared layer. An...
Abstract Although there have been attempts to use non‐lead based halide perovskite materials as insulating layers for resistive switching memory, the ratio of low resistance state (LRS) high (HRS) ( = ON/OFF ratio) and/or endurance is reported be mostly lower than 10 3 . Resistive memory characteristics layered (BzA) 2 CuBr 4 (BzA C 6 H 5 CH NH ) with and long are here. The X‐ray diffraction (XRD) pattern deposited layer shows highly oriented (00 l planes perpendicular a Pt substrate. An...
Post-treatement of an unannealed perovskite film is found to be more efficienct way passivate defects solar cells.
Memristors are key elements for building synapses and neurons in advanced neuromorphic computation. made with a wide range of material technologies, but they share some basic functionalities to reproduce biological functions such as synapse plasticity dynamic information processing. Here, we explain the memristors, show that main memristor can be obtained combination ordinary two-contact circuit elements: inductors, capacitors, resistors, rectifiers. The measured IV characteristics yield...
Here, we report on the resistive switching performance of a thin Cs3Bi2Br9 perovskite film with thickness <0.1 μm, enabled by synthesized powder. X-ray diffraction (XRD) confirmed that powder was crystallized in trigonal phase space group P3̅m1. Compared to precursor mixture CsBr and BiBr3, improved solubility dimethyl sulfoxide (DMSO), leading conformal coating an indium-doped tin oxide (ITO) substrate. The Ag/Cs3Bi2Br9/ITO devices exhibited bipolar behavior, where forming step occurs at...
Abstract Nanocarbon materials, such as graphene and carbon nanotubes (CNTs), have attracted considerable attention the main or supplementary components in various optoelectronics boosting device performance improving process conditions. Specifically, their application to perovskite solar cells, which are among most promising photovoltaic devices acknowledged for eco‐friendly energy generation, has significantly impacted current standing of metal halide perovskite‐based devices. The...
The AI and IoT era requires software hardware capable of efficiently processing massive amounts data quickly at a low cost. However, there are bottlenecks in existing Von Neumann structures, including the difference operating speed current-generation DRAM Flash memory systems, large voltage required to erase charge nonvolatile cells, limitations scaled-down systems. Ferroelectric materials one exciting means breaking away from this structure, as Hf-based ferroelectric have voltage, excellent...
Halide perovskite-based resistive switching memory (memristor) has potential in an artificial synapse. However, abrupt switch behavior observed for a formamidinium lead triiodide (FAPbI
We report here the effect of interlayer spacing in 2-dimensional (2D) perovskites [C<sub>6</sub>H<sub>5</sub>(CH<sub>2</sub>)<sub>n</sub>NH<sub>3</sub>]<sub>2</sub>PbI<sub>4</sub> (anilinium (An) for <italic>n</italic> = 0, benzylammonium (BzA) 1 and phenylethylammonium (PEA) 2) on resistive switching properties.
Reduction of dimensionality a lead-free perovskite from 3D to 2D improves the ON/OFF ratio 10 2 7 .
Flexible and transparent artificial synapse with p-type Cs 3 Cu 2 I 5 operates energy consumption as low 10 aJ μm −2 because of asymmetric carrier transport.
Abstract For valence change memory (VCM)‐type synapses, a large number of vacancies help to achieve very linearly changed dynamic range, and also, the low activation energy enables low‐voltage operation. However, increases current artificial synapses by acting like dopants, which aggravates low‐energy operation device scalability. Here, mixed‐dimensional formamidinium bismuth iodides featuring in‐situ formed type‐I band structure are reported for VCM‐type synapse. As compared pure 2D 0D...
Abstract Organic–inorganic or inorganic metal halide materials have emerged as a promising candidate for resistive switching material owing to their ability achieve low operating voltage, high on–off ratio, and multi‐level switching. However, the variation, limited endurance, poor reproducibility of device hinder practical use memristors. In this study, universal approach address issues using van der Waals contact (vdWC) is reported. By transferring pre‐deposited onto active layers, an...
This study examined the hypothesis that control of NADPH oxidase‐2 (Nox2)‐mediated reactive oxygen species (ROS) regulates expression matrix metalloproteinases (MMPs) and migration macrophages. Lipopolysaccharide (LPS) stimulation Raw264.7 cells mice peritoneal macrophages increased MMP‐9, 10, 12 13 mRNA, also cell migration. Treatment with an antioxidant ( N ‐acetyl cysteine) or Nox inhibitors strongly inhibited MMPs by LPS caused ROS production in mRNA isoforms Nox1 Nox2 20‐fold two‐fold,...
Neuromorphic devices, which can mimic the human body's neural system, are rising as an essential technology for artificial intelligence. Here, two types of organic synaptic transistors (OSTRs), OSTR‐A and OSTR‐B, fabricated on either glass or polymer film using water‐processable charge‐trapping gate‐insulating layers that prepared by reacting ethylenediamine (EDA) poly(2‐acrylamido‐2‐methyl‐1‐propanesulfonic acid) (PAMPSA). is designed to function a basic synapse gate pulse stimulation only,...
Abstract The amorphous In─Ga─Zn─O (a‐IGZO) thin film transistors (TFTs) have attracted attention as a cell transistor for the next generation DRAM architecture because of its low leakage current, high mobility, and back‐end‐of‐line (BEOL) compatibility that enables monolithic 3D (M3D) integration. IGZO‐based electronic devices used in harsh environments such radiation exposure can be vulnerable, resulting functional failure. Here, behavior subgap density‐of‐states (DOS) over full range...
Abstract Hepatitis A virus (HAV) is a causative agent of acute viral hepatitis, which represents significant public health problem. HAV usually transmitted by oral‐fecal route and prevalent not only in developing countries but also developed worldwide. To characterize the wild type strains circulating Korea, VP3/VP1 VP1/P2A junction regions were detected RT‐PCR from IgM positives during 2005 2006. Among 160 positive sera, 30% (n = 48) for RNA. Additionally, all six stools, collected outbreak...
In the catalysis of SN2 fluorination reactions, ionic liquid anion plays a key role as Lewis base by binding to counterion Cs+ and thereby reducing retarding Coulombic influence on nucleophile F−. The reaction rates also depend critically structures cation, for example, n-butyl imidazolium gives no products, whereas n-butylmethyl works well. origin observed phenomenal synergetic effects [mim-tOH][OMs], in which t-butanol is bonded covalently cation [mim], that moiety binds leaving group...