A5002888910- Advanced Sensor and Energy Harvesting Materials
- Semiconductor materials and devices
- Advanced Memory and Neural Computing
- Environmental Impact and Sustainability
- Catalytic Processes in Materials Science
- Advancements in Semiconductor Devices and Circuit Design
- Electrocatalysts for Energy Conversion
- Nanowire Synthesis and Applications
- Ferroelectric and Negative Capacitance Devices
- Advanced Materials and Mechanics
- Advanced Photocatalysis Techniques
Xidian University
2015-2025
The increasing demand for mobile artificial intelligence applications has elevated edge computing to a prominent research area. Silicon materials, renowned their excellent electrical properties, are extensively utilized in traditional electronic devices. However, the development of silicon materials flexible neuromorphic devices encounters great challenges. To address these limitations, ultrasoft nanomembranes have emerged as focal point due capability preserve superior properties while...
Developing efficient and economical electrocatalysts for hydrogen generation at high current densities is crucial advancing energy sustainability. Herein, a self-supported evolution reaction (HER) electrocatalyst rationally designed prepared on nickel foam through simple two-step chemical etching method, which consists of Pt quantum dots (PtQDs) coupled with nickel-iron layered double hydroxide (NiFe LDH) nanosheets (named PtQDs@NiFe LDH). The characterization results indicate that the...
Abstract Emerging transient electronics offer great potential in eco‐friendly and bioresorbable electronic applications. In this study, bendable biodegradable metal‐oxide‐semiconductor field‐effect transistors (MOSFETs) capacitors (MOSCAPs) have been fabricated by integrating HfO 2 /Al O 3 high‐k bilayers on the transferred silicon nanomembranes (Si NMs) utilizing PLGA‐gelatin‐chitosan polymeric substrates. The n‐channel MOSFETs demonstrate high effective mobility of 871 cm V −1 s , on‐state...
We have investigated the temperature dependent interfacial and electrical characteristics of p-GaAs metal–oxide–semiconductor capacitors during atomic layer deposition (ALD) annealing HfO2 using tetrakis (ethylmethyl) amino hafnium precursor. The leakage current decreases with increase ALD lowest is obtained at 300 °C as a result Frenkel-Poole conduction induced being greatly weakened by reduction oxides higher temperature. Post (PDA) 500 after leads to compared other temperatures. A...