Jialiang Wang

ORCID: 0000-0003-0199-3094
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About
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Research Areas
  • Catalytic Alkyne Reactions
  • Chemical Synthesis and Reactions
  • Synthetic Organic Chemistry Methods
  • Semiconductor materials and devices
  • Advanced Memory and Neural Computing
  • Thin-Film Transistor Technologies
  • Asymmetric Synthesis and Catalysis
  • Cyclopropane Reaction Mechanisms
  • Advanced Sensor and Energy Harvesting Materials
  • Oxidative Organic Chemistry Reactions
  • Crystallization and Solubility Studies
  • X-ray Diffraction in Crystallography
  • ZnO doping and properties
  • Catalytic Cross-Coupling Reactions
  • Sulfur-Based Synthesis Techniques
  • Ferroelectric and Negative Capacitance Devices
  • CCD and CMOS Imaging Sensors
  • Asymmetric Hydrogenation and Catalysis
  • Advanced battery technologies research
  • Transition Metal Oxide Nanomaterials
  • Congenital heart defects research
  • Layered Double Hydroxides Synthesis and Applications
  • Photonic and Optical Devices
  • 2D Materials and Applications
  • Gas Sensing Nanomaterials and Sensors

Peking University Shenzhen Hospital
2022-2025

Peking University
2012-2024

Hong Kong Polytechnic University
2024

Oregon State University
2022

Nanjing Tech University
2018-2020

The Synergetic Innovation Center for Advanced Materials
2018

South China University of Technology
2018

Beijing University of Posts and Telecommunications
2015

Mudanjiang Medical University
2014

Harbin Engineering University
2012

Hexagonal mesoporous titanosilicates with distinguishable framework charges and textural mesoporosity, namely, Ti-MCM-41 Ti-HMS, were prepared at ambient temperature by electrostatic neutral assembly processes, respectively. Titanium incorporation the 2 mol % level for both materials was accompanied increases in lattice parameters wall thicknesses, but pore sizes remained unaffected. Cross-linking of anionic as-synthesized Ti-substituted MCM-41 S+I- S+X-I+ pathways (where S+ is a quaternary...

10.1021/ja960594z article EN Journal of the American Chemical Society 1996-01-01

The increasing demand for mobile artificial intelligence applications has elevated edge computing to a prominent research area. Silicon materials, renowned their excellent electrical properties, are extensively utilized in traditional electronic devices. However, the development of silicon materials flexible neuromorphic devices encounters great challenges. To address these limitations, ultrasoft nanomembranes have emerged as focal point due capability preserve superior properties while...

10.1002/adma.202413404 article EN Advanced Materials 2025-01-02

An ultrathin atomic-layer-deposited (ALD) AlOx gate insulator (GI) was implemented for self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs). Although the 4.0-nm thick exhibited ideal insulating properties, interaction between ALD and predeposited a-IGZO caused a relatively defective interface, thus giving rise to hysteresis bias stress instabilities. As analyzed using high-resolution transmission electron microscopy, X-ray photoelectron spectroscopy, Hall...

10.1021/acsami.2c20176 article EN ACS Applied Materials & Interfaces 2023-01-29

Ru nanodendrites composed of ultrathin fcc/hcp nanoblades showed excellent electrochemical activity and better stability than Pt/C in an alkaline hydrogen evolution reaction.

10.1039/c8cc01343h article EN Chemical Communications 2018-01-01

One-dimensional (1D) nanoscrolls derived from two-dimensional (2D) nanosheets own unusual physical and chemical properties that arise the spiraled 1D morphology atomic thin 2D building blocks. Unfortunately, preparation of large-sized transition-metal dichalcogenides (TMDCs) remains a big challenge, which greatly restricts fabrication single-scroll devices for their fundamental studies further applications. In this work, we report universal facile method, by making use evaporation process...

10.1021/acsami.8b01856 article EN ACS Applied Materials & Interfaces 2018-03-30

Iron chloride has been found to be an efficient catalyst for the disproportionation of allylic alcohols, which provides a convenient method selective transformation alcohols alkenes and α,β-unsaturated ketones. Furthermore, this catalytic system is also effective highly reduction ethers, acetates with benzyl alcohol under neutral reaction conditions.

10.1021/jo900070q article EN The Journal of Organic Chemistry 2009-04-06

The creation of crystal phase heterostructures transition metal chalcogenides, e.g., the 1T/2H heterostructures, has led to formation metal/semiconductor junctions with low potential barriers. Very differently, post-transition chalcogenides are semiconductors regardless their phases. Herein, we report, based on experimental and simulation results, that alloying between 1T-SnS2 1T-WS2 induces a charge redistribution in Sn W realize metallic Sn0.5W0.5S2 nanosheets. These nanosheets epitaxially...

10.1038/s41467-018-06053-z article EN cc-by Nature Communications 2018-08-31

Flexible static random access memory (SRAM) plays an important role in flexible electronics and systems. However, achieving SRAM with a small footprint, high flexibility, thermal stability has always been big challenge. In this work, ultraflexible six-transistor integration density is realized based on monolithic three-dimensional (M3D) design. design, vertical stacked n-type indium gallium zinc oxide thin film transistors p-type carbon nanotube share common gate drain electrodes,...

10.1021/acsnano.3c10182 article EN ACS Nano 2024-01-16

Electrical characteristics of self-aligned top-gate (SATG) amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) with 4 nm-thick atomic-layer-deposited (ALD) AlO<sub>x</sub> gate insulator (GI) are investigated. It is demonstrated that the SATG a-IGZO TFTs present high-performance metrics including a near-ideal subthreshold swing (<i>SS</i>) 60.9 mV/dec, low off-state current below 10<sup>&#x2212;12</sup> A, positive <inline-formula> <tex-math notation="LaTeX">${V}_{\text{th}}$...

10.1109/led.2022.3160514 article EN IEEE Electron Device Letters 2022-03-17

Abstract The advancement of Internet Things has stimulated huge demands on low-voltage flexible electronics. Carbon-nanotube (CNT)-based electronics are great promise to this end for their intrinsic flexibility, high carrier mobility, and capability synthesize as semiconducting or metallic serve the channels, electrodes, interconnects circuits. However, gate dielectric often adopt brittle oxides, which can seriously limit device flexibility. Herein, we show that a hybrid polyimide-Al 2 O 3...

10.1038/s41528-022-00190-8 article EN cc-by npj Flexible Electronics 2022-07-18

Abstract Flexible electronics based on complementary metal‐oxide‐semiconductor (CMOS) technology have enabled a smart soft world. However, the trade‐off among flexibility, density, and electrical performance has been long‐lasting unresolved issue. Here, monolithic three‐dimensional (M3D) CMOS design is proposed to address this problem realize ultra‐flexible with high electronic‐performance integration. This utilizes vertically stacked p‐type carbon nanotube transistors n‐type indium gallium...

10.1002/adfm.202305379 article EN Advanced Functional Materials 2023-07-17

Abstract Multifarious artificial synaptic devices are extensively proposed in the field of neuromorphic hardware systems for their applicability promising parallel computer architecture, which is preferred to classical Von Neumann architecture numerous and complex information processing. Besides ability mimic typical biological behaviors, low power consumption critical system.In this paper, ultralow‐power Ta 2 O 5 /Al 3 bilayer‐gate‐dielectric transistors (TABSTs) with low‐temperature atomic...

10.1002/aelm.202100922 article EN Advanced Electronic Materials 2022-01-22

Modern information technologies have tremendous demands on flexible electronic devices such as thin-film transistors (TFTs). As the TFT technology continues to advance, properties of gate dielectric become a bottleneck for TFTs achieve fast switching speed, low operation voltage, and downscaling. The layer should be sufficiently thin, insulating, flexible, therefore, hybrid organic–inorganic dielectrics are great promise this purpose. In work, we develop scalable vapor-phase MLD/ALD...

10.1021/acs.chemmater.2c01997 article EN Chemistry of Materials 2022-10-05

A recyclable, convenient, and efficient catalytic system for C-acylation of 1,3-dicarbonyl compounds malononitrile with acid chlorides has been developed, giving moderate to excellent yields under mild conditions. This is the first example such reactions. In addition, by applying this protocol as key step, 3,5-disubstituted-1H-pyrazole-4-carboxylate can easily be synthesized in high a one-pot procedure.

10.1021/ol701961z article EN Organic Letters 2007-09-29

Hierarchical superstructures of laterally or vertically oriented CoOOH nanoplates were prepared by topochemical conversion CoAl-LDH microplates intercalated with CO32- SO42- anions, respectively. The superstructure exhibited better electrocatalytic performance as compared to the lateral counterpart, attributable enlarged accessible surface area and promoted reaction kinetics.

10.1039/d0cc03773g article EN Chemical Communications 2020-01-01
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