A5101552167- Thin-Film Transistor Technologies
- ZnO doping and properties
- Transition Metal Oxide Nanomaterials
- Gas Sensing Nanomaterials and Sensors
- Semiconductor materials and devices
- Silicon Nanostructures and Photoluminescence
- Advanced Sensor and Energy Harvesting Materials
- Silicon and Solar Cell Technologies
- Analytical Chemistry and Sensors
- Conducting polymers and applications
- Laser Material Processing Techniques
- Ga2O3 and related materials
- Nanomaterials and Printing Technologies
- Dielectric materials and actuators
- Advanced Surface Polishing Techniques
- Non-Invasive Vital Sign Monitoring
- Ferroelectric and Piezoelectric Materials
- Surface Roughness and Optical Measurements
- Fluid Dynamics and Thin Films
- CCD and CMOS Imaging Sensors
- Organic Light-Emitting Diodes Research
- Integrated Circuits and Semiconductor Failure Analysis
- Electromagnetic Compatibility and Noise Suppression
- Advanced Materials and Mechanics
- Silicon Carbide Semiconductor Technologies
Wuyi University
2021-2024
South China University of Technology
2015-2021
Tokyo Institute of Technology
2020-2021
University of Wisconsin–Madison
2019
University at Buffalo, State University of New York
2019
Korea University
2019
University of Electronic Science and Technology of China
2019
State Key Laboratory of Luminescent Materials and Devices
2016
Tungsten trioxide (WO3) is a wide band gap semiconductor material that used as an important electrochromic layer in devices. In this work, the effects of annealing temperature on optical sol-gel WO3 films were investigated. X-ray Diffraction (XRD) showed amorphous after being annealed at 100 °C, 200 °C and 300 respectively, but became crystallized 400 500 °C. An atomic force microscope (AFM) crystalline rougher than (annealed °C). ultraviolet spectrophotometer decreased from 3.62 eV to 3.30...
In this letter, we propose a strategy to improve the electrical performance of amorphous In-Ga-Zn-O (a-IGZO) thin film transistor (TFT) with copper (Cu) electrodes by depositing 30-nm thick In-Sn-O (ITO) interlayer on top IGZO layer suppress Cu migration. As result, a-IGZO TFT ITO exhibits enhanced (V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">TH</sub> 1.5 V, μ xmlns:xlink="http://www.w3.org/1999/xlink">FE</sub> 11.5 cm <sup...
Optical detection is of great significance in various fields such as industry, military, and medical treatment, especially ultraviolet (UV) photodetectors. Moreover, the demand for wearable devices continues to increase, UV photodetector, which one most important sensors, has put forward higher requirements bending resistance, durability, transparency. Tin oxide (SnO2) a wide band gap, high exciton gain, etc., considered be an ideal material preparing At present, SnO2-based photodetectors...
In this report, back-channel-etched (BCE) thin-film transistors (TFTs) were achieved by using Si-incorporated SnO2 (silicon tin oxide (STO)) film as active layer. It was found that the STO acid-resistant and in amorphous state. The BCE-TFT with layer exhibited a mobility of 5.91 cm2/V s, threshold voltage 0.4 V, an on/off ratio 107, steep subthreshold swing 0.68 V/decade. Moreover, device had good stability under positive/negative gate-bias stress.
We report a high-performance amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) thin-film transistor (TFT) with new copper-chromium (Cu-Cr) alloy source/drain electrodes. The TFT shows high mobility of 39.4 cm 2 ·V − 1 ·s turn-on voltage −0.8 V and low subthreshold swing 0.47 V/decade. Cu diffusion is suppressed because pre-annealing can protect a-IGZO from damage during the electrode sputtering reduce copper paths by making film denser. Due to interaction Cr a-IGZO, carrier concentration which...
Flexible and fully transparent thin film transistors (TFT) were fabricated via room temperature processes. The TFT on the PEN exhibited excellent performance, including a saturation mobility (μsat) of 7.9 cm2/V·s, an Ion/Ioff ratio 4.58 × 106, subthreshold swing (SS) 0.248 V/dec, transparency 87.8% at 550 nm, as well relatively good stability under negative bias stress (NBS) bending stress, which shows great potential in smart, portable flexible display, wearable device applications.
Traditional methods to evaluate the quality of amorphous silicon-substituted tin oxide (a-STO) semiconductor film are destructive and time-consuming. Here, a novel non-destructive, quick, facile method named microwave photoconductivity decay (μ-PCD) is utilized a-STO for back channel etch (BCE) thin-film transistors (TFTs) by simply measuring D value peak reflectivity signal. Through μ-PCD method, both optimum deposition procedure optimal annealing temperature attained prepare with superior...
The effect of intrinsic stress on the structure and physical properties silicon-tin-oxide (STO) films have been investigated. Since a state tensile is available in as-deposited films, value can be exponentially enhanced when annealing temperature increased. able to not only suppress crystallization widen optical band gap STO but also reduce defects films. In this report, good electrical performance thin-film transistors (TFTs) obtained 450 °C. This includes saturation mobility that reached...
In this letter, copper alloy Cu-0.3 wt.% Cr-0.2 Zr film was used as bottom-gate electrode for flexible neodymium-doped InZnO thin-film transistor (TFT) applications. The results showed that the sputtering power and annealing temperature of a Cu-Cr-Zr on polyimide (PI) substrate greatly affect resistivity adhesion gate electrode. And lowest well best obtained by increasing to 150 W 350°, respectively, which compatible with optimum Nd.IZO channel. Transmission electron microscopy aggregation...
Polyethylene oxide (PEO)-modified silicon dioxide (SiO2)-doped crystalline tungsten trioxide (WO3) films for use as electrochromic layers were prepared on indium tin (ITO) glass by the sol–gel spin coating technique. The effects of PEO template and SiO2 transmittance modulation ability WO3 investigated. Fourier transform infrared spectroscopy (FT-IR) spectra analysis indicated that was decomposed after annealing at 500 °C 3 h. X-ray diffraction (XRD) pattern showed both helped reduce grain...
Modulation of the diaphragm pore radius modifies synergistic effects contact resistance and volume for high sensitivity stability.
Bottom-gate all-aluminum thin film transistors with multi conductor/insulator nanometer heterojunction were investigated in this article. Alumina (Al₂O₃) insulating layer was deposited on the surface of aluminum doping zinc oxide (AZO) conductive layer, as one AZO/Al₂O₃ unit. The measurements transmittance electronic microscopy (TEM) and X-ray reflectivity (XRR) revealed smooth interfaces between ~2.2-nm-thick Al₂O₃ layers ~2.7-nm-thick AZO layers. devices entirely composited by...
Ultra-high definition displays have become a trend for the current flat plane displays. In this study, contact properties of amorphous silicon⁻tin oxide thin-film transistors (a-STO TFTs) employed with source/drain (S/D) electrodes were analyzed. Ohmic good device performance was achieved when a-STO matched indium-tin-oxide (ITO) or Mo electrodes. The acceptor-like densities trap states (DOS) TFTs further investigated by using low-frequency capacitance⁻voltage (C⁻V) characteristics to...
Amorphous Silicon-Tin-Oxide thin film transistors (a-STO TFTs) with Mo source/drain electrodes were fabricated. The introduction of a ~8 nm MoOx interlayer between and a-STO improved the electron injection in TFT. adjacent to semiconductor mainly gets oxygen atoms from oxygen-rich surface form interlayer. self-formed acting as an efficient interface modification layer could conduce stepwise internal transport barrier formation while blocking diffuse into layer, which would contribute ohmic...
In this research, a passivated methodology was proposed for achieving good electrical characteristics back-channel-etch (BCE) typed amorphous Si-Sn-O thin film transistors (a-STO TFTs). This implied that the thermal annealing (i.e., pre-annealing) should be carried out before deposition of SiOx passivation layer. The pre-annealing played an important role in affecting device performance, which did get rid contamination lithography process. Simultaneously, acceptor-like sub-gap density states...
Amorphous metal oxide has been a popular choice for thin film material in recent years due to its high uniformity. The dielectric layer is one of the core materials transistor (TFT), and it affects ability charges storage TFT. There conflict between relative constant wide band gap, so we solved this problem by using multiple metals increase entropy system. In paper, prepared zirconium-yttrium-aluminum-magnesium-oxide (ZYAMO) layers with solution method. basic properties ZYAMO films were...