A5012238757- Photonic Crystals and Applications
- Real-time simulation and control systems
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Parallel Computing and Optimization Techniques
- Advancements in Semiconductor Devices and Circuit Design
- Distributed and Parallel Computing Systems
- Photonic and Optical Devices
- Optical Coatings and Gratings
- Simulation Techniques and Applications
- Experimental Learning in Engineering
- Numerical methods for differential equations
- Matrix Theory and Algorithms
- Electromagnetic Simulation and Numerical Methods
- Silicon Nanostructures and Photoluminescence
- Thin-Film Transistor Technologies
- Advancements in PLL and VCO Technologies
- Semiconductor Lasers and Optical Devices
- Calibration and Measurement Techniques
- Laser Material Processing Techniques
- Electromagnetic Compatibility and Noise Suppression
- Semiconductor materials and interfaces
- Magnetic properties of thin films
- Silicon and Solar Cell Technologies
- Radiation Effects in Electronics
Sandia National Laboratories
2007-2024
Sandia National Laboratories California
2013-2023
Office of Scientific and Technical Information
2012
New Mexico Institute of Mining and Technology
2012
Radiation Effects Research Foundation
2012
National Technical Information Service
2012
National Renewable Energy Laboratory
2001-2003
Colorado School of Mines
2000
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Two distinct maxima ${E}_{W}$ and ${E}_{W}^{\ensuremath{'}}$ are observed in the resonant Raman-scattering profile for LO phonon asymmetric linewidth broadening ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$ attributed to states arising from a splitting of quadruply degenerate conduction band near L point. The data provide further insight into physics underlying giant band-gap bowing ${\mathrm{GaAs}}_{1\ensuremath{-}x}{\mathrm{N}}_{x},$ as well reveal be powerful signature studying...
We measured the infrared reflectance of thin films degenerate n-type InxGa1−xAs and n-InAsyP1−y as a function doping for compositions that correspond to x=0.53, 0.66, 0.78 (band gaps 0.74, 0.60, 0.50 eV, respectively) y=0.00, 0.31, 0.52, 0.71 1.34, 1.00, 0.75, 0.58 respectively). then used Drude theory Hall measurements determine effective electron mass these samples, checked results using Raman spectroscopy. The increases abruptly free-electron density converges at 5×1019 electrons/cm3....
In this study, silicon nanocrystal (Si-nc) growth is studied in a relatively long thermal budget regime, 3 h at 1100–1200 °C, to examine large diameter nanocrystals (i.e. average diameters greater than 5 nm). Morphology, defects within the and size dependence as function of thickness oxide are exaggerated regime more readily characterized longer diffusion length regime. particular, nearby surfaces, substrate surface, appear deplete excess oxide, leading strong with position oxide. To pursue...
Hydrogenated amorphous germanium (a-Ge:H) is a material of interest for optoelectronic applications such as solar cells and radiation detectors because the material’s potential to extend wavelength sensitivity hydrogenated silicon (a-Si:H). An increase in porosity observed compared a-Si:H, this has been correlated with degradation electrical performance. Improved understanding mechanisms porous formation a-Ge:H films therefore desirable order better control it. In paper we describe...
Photocurrent generated by ionizing radiation represents a threat to microelectronics in environments. Circuit simulation tools that employ compact models for individual electrical components (SPICE, e.g.) are often used analyze these threats. Historically, many photocurrent have suffered from accuracy issues due the use of empirical assumptions, or physical approximations with limited validity. In this paper, an analytic model is developed epitaxial diode structures heavily-doped...
Demand for integration of near infrared optoelectronic functionality with silicon complementary metal oxide semiconductor (CMOS) technology has many years motivated the investigation low temperature germanium on deposition processes. This work describes development a high density plasma chemical vapor process that uses (<460 °C) in situ germane/argon surface preparation step epitaxial growth silicon. It is shown treatment sufficiently removes SiOx and carbon at to enable epitaxy. The...
Full bandgap (3D) photonic crystal materials offer a means to precisely engineer the electromagnetic reflection, transmission, and emission properties of surfaces over wide angular spectral ranges. However, very few 3D crystals have been successfully demonstrated with areas larger than 1 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Large sheets (PBG) structures would be useful, for example, as hot or cold mirrors passively...
We have developed a system to measure the directional thermal emission from surface, and in turn, calculate its emissivity. This approach avoids inaccuracies sometimes encountered with traditional method for calculating emissivity, which relies upon subtracting measured total reflectivity transmissivity unity. Typical measurements suffer an inability detect backscattered light, may not be accurate high angles of incidence. Our design allows us vary measurement angle (θ) near-normal ~80°, can...
The LIGA microfabrication technique offers a unique method for fabricating 3-dimensional photonic lattices based on the Iowa State "logpile" structure. These structures represent [111] orientation of [100] logpile previously demonstrated by Sandia National Laboratories. novelty to this approach is single step process that does not require any alignment. mask and substrate are fixed one another exposed twice from different angles using synchrotron light source. first exposure patterns resist...