A5032788526- Particle physics theoretical and experimental studies
- Quantum Chromodynamics and Particle Interactions
- High-Energy Particle Collisions Research
- Dark Matter and Cosmic Phenomena
- Neutrino Physics Research
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Particle Detector Development and Performance
- Cosmology and Gravitation Theories
- CCD and CMOS Imaging Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Transition Metal Oxide Nanomaterials
- Advanced Optical Sensing Technologies
- Analytical Chemistry and Sensors
- Thin-Film Transistor Technologies
- Infrared Target Detection Methodologies
- Advanced MEMS and NEMS Technologies
- Silicon Carbide Semiconductor Technologies
- Black Holes and Theoretical Physics
- Neuroscience and Neural Engineering
- Gas Sensing Nanomaterials and Sensors
- Silicon and Solar Cell Technologies
- Analog and Mixed-Signal Circuit Design
- 3D IC and TSV technologies
- Semiconductor Lasers and Optical Devices
University of Duisburg-Essen
2008-2020
Fraunhofer Institute for Microelectronic Circuits and Systems
2011-2020
University of Göttingen
2019
Fraunhofer Society
1989-2015
Entwicklungszentrum für Schiffstechnik und Transportsysteme
2013
Max Planck Institute for Physics
2010
Pathologie Hamburg-West
2010
Board of the Swiss Federal Institutes of Technology
1997-2006
ETH Zurich
1997-2006
Kyungpook National University
2006
Recent technical advances in drones make them increasingly relevant and important tools for forest measurements. However, information on how to optimally set flight parameters choose sensor resolution is lagging behind the developments. Our study aims address this gap, exploring effects of drone (altitude, image overlap, resolution) reconstruction successful 3D point extraction. This was conducted using video footage obtained from flights at several altitudes, sampled images varying...
The design and construction of the silicon strip microvertex detector (SMD) L3 experiment at LEP are described. We present sensors, readout electronics, data acquisition system, mechanical assembly support, displacement monitoring systems radiation system recently installed double-sided, double-layered SMD. This utilizes novel sophisticated techniques for its readout.
This paper presents a novel fully implantable wireless sensor system intended for long-term monitoring of hypertension patients, designed implantation into the femoral artery with computed tomography angiography. It consists pressure and telemetric unit, which is wirelessly connected to an extracorporeal readout station energy supply data recording. The measures intraarterial at sampling rate 30 Hz accuracy ±1.0 mmHg over range 30-300 mmHg, while consuming up 300 μW. A special peel-away...
A CMOS technology in silicon on insulator (SOI) for VLSI applications is presented. The a buried nitride formed by nitrogen implantation and annealing. devices are fabricated the superficial monocrystalline layer without an epitaxial process, 1-µm PMOS 2-µm NMOS transistors have been realized, which used to built inverters, ring Oscillators, other circuits. With 40-nm gate oxide withstand drain voltages of 10 V. Mobilities, subthreshold behavior, leakage currents nearly same as bulk-CMOS...
This paper describes the development of a novel ruggedized high-temperature pressure sensor operating in lateral field exited (LFE) Lamb wave mode. The comb-like structure electrodes on top aluminum nitride (AlN) were used to generate wave. A membrane was fabricated SOI wafer with 10 µm thick device layer. chip mounted test package and applied backside membrane, range 20–100 psi. temperature coefficient frequency (TCF) experimentally measured −50 °C 300 °C. By using modified Butterworth–van...
We use the reaction e+e−→hadrons, in Mark J detector at DESY electron-positron collider PETRA, to determine hadronic cross section up 46.78 GeV. The production of a top quark with charge equal (2/3) is excluded 46.6 GeV 95% C.L. observed rise higher energies consistent electroweak prediction for Z0 mass 93 describe some unusual muon inclusive events.Received 27 January 1986DOI:https://doi.org/10.1103/PhysRevD.34.681©1986 American Physical Society
We use the reaction e+e−→μ+μ−, in Mark J detector at DESY high-energy e+e− collider PETRA, to test standard electroweak theory and find good agreement. also set limits on parameters of several extended gauge theories.Received 30 May 1985DOI:https://doi.org/10.1103/PhysRevLett.55.665©1985 American Physical Society
We report on a multi-sensor system for the parallel in-situ monitoring of cell nutrients, metabolites and mass in biotechnological processes.The integration enzyme sensors impedance spectroscopy one chip applications bioreactors is demonstrated first time to our best knowledge.Measurements glucose lactate concentrations wide range are shown with linear ranges up 600 mM 900 mM, respectively.The sensor successfully employed culture Saccharomyces cerevisiae monitor consumption increasing cells.
Standard bulk CMOS technology targets operating temperatures of not more than 175°C. Silicon-on-insulator technologies are commonly used up to 250°C. In this work, we evaluate the limit for electronic circuit function realized in thin film SOI even higher temperatures. At Fraunhofer IMS, a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers tungsten metallization with excellent reliability concerning electromigration, as well voltage-independent...
The semiconductor industry continues to grow and innovate; however, companies are facing challenges in growing their workforce with skilled technicians engineers. To meet the demand for well-trained workers worldwide, innovative ways attract talent strengthen local ecosystem of utmost importance. FOSS CAD/EDA tools combined free open-access PDKs can serve as a new platform bringing together IC design newbies, enthusiasts, experienced mentors.
A thin-film resistor out of Ni(80%)Cr(20%) for integration in a standard complementary metal-oxide-semiconductor process with temperature coefficient resistance (TCR) below 10 ppm/K was realized by applying thin Ti layer underneath. The Ti-layer thickness and the duration furnace annealing after deposition were optimized different experiments. combination 5-nm + 10-nm NiCr 30-min heat treatment at 350degC forming gas ambient found to yield sheet about 140 Omega/sq TCR ppm/K. long-term drift...
Standard Bulk-CMOS-technology targets use-temperatures of not more than 175 °C. Silicon-on-Insulator-technologies are commonly used up to 250 In this work we evaluate the limit for electronic circuit function realized in thin film SOI-technologies even higher temperatures. At Fraunhofer IMS a versatile 1.0 μm SOI-CMOS process based on 200 mm wafers is available. It features three layers tungsten metalization with excellent reliability concerning electromigration, voltage independent...