A5058058165- GaN-based semiconductor devices and materials
- Ga2O3 and related materials
- ZnO doping and properties
- Acoustic Wave Resonator Technologies
- Silicon Carbide Semiconductor Technologies
- Ferroelectric and Piezoelectric Materials
- Multiferroics and related materials
- Advanced ceramic materials synthesis
- Semiconductor materials and devices
- Advanced Chemical Sensor Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Microwave Dielectric Ceramics Synthesis
- Semiconductor Quantum Structures and Devices
- Dielectric properties of ceramics
- Biochemical Analysis and Sensing Techniques
- Nutrition, Health and Food Behavior
- Energy Efficient Wireless Sensor Networks
- Underwater Vehicles and Communication Systems
- Photocathodes and Microchannel Plates
- Indoor and Outdoor Localization Technologies
- Spectroscopy and Laser Applications
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
Arizona State University
2022-2025
Iowa State University
2021-2022
University of Sheffield
2020
Zhejiang Industry Polytechnic College
2015
Electrical homogeneity is vital in optimising energy storage performance BiFeO<sub>3</sub>–BaTiO<sub>3</sub>–<italic>x</italic>Bi(Li<sub>0.5</sub>Nb<sub>0.5</sub>)O<sub>3</sub> ceramic multilayer capacitors, giving rise to high recoverable density ∼13.8 J cm<sup>−3</sup> under electric field ∼950 kV cm<sup>−1</sup> and fatigue resistance behaviour.
In this Letter, low-temperature (400 °C) chemical vapor deposition-grown boron nitride (BN) was investigated as the gate dielectric for AlGaN/GaN metal–insulator–semiconductor high electron mobility transistors (MISHEMTs) on a Si substrate. Comprehensive characterizations using x-ray photoelectron spectroscopy, reflection energy loss atomic force microscope, high-resolution transmission microscopy, and time-of-flight secondary ion mass spectrometry were conducted to analyze deposited BN...
Breakdown capability of <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${\beta }$ </tex-math></inline-formula> -Ga <sub xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /GaN heterojunction-based vertical p-n power diodes with mesa edge termination (ET) was comprehensively investigated using TCAD simulation. With notation="LaTeX">$5~{\mu...
This work presents a systematic exploration of the design space for delta-doped <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -(Al <sub xmlns:xlink="http://www.w3.org/1999/xlink"><i>x</i></sub> Ga xmlns:xlink="http://www.w3.org/1999/xlink">1-<i>x</i></sub> ) xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O xmlns:xlink="http://www.w3.org/1999/xlink">3</sub> /Ga...
In the last two decades, third-generation wide bandgap semiconductor III-nitrides have revolutionized a myriad of electronic and photonic devices applications, including power electronics, extreme-environment RF amplifiers, optoelectronics such as light-emitting diodes laser diodes. Recently, III-nitride heterostructures (e.g., AlGaN/GaN) based intersubband transition (ISBT) has garnered considerable research interest for infrared (IR), terahertz (THz), ultrafast photodetectors quantum...
Abstract This letter reports the demonstration and electrical characterization of high-voltage AlN metal-semiconductor field-effect transistors (MESFETs) on single-crystal substrates. Compared with MESFETs foreign substrates, AlN-on-AlN showed high breakdown voltages over 2 kV for drain-to-gate spacing 15 μm one highest average fields among reported MESFETs. Additionally, devices also exhibited decent drain saturation current on/off ratio without complicated regrown or graded contact layers,...
How to best solve the coverage problem has always been a critical issue in wireless sensor networks; this paper focuses on redundant network nodes, short life cycle and other defects firstly sets nodes utilization effective as optimization goals, so establish relevant mathematical model, then introduce inverse Gaussian mutation algorithms AFSA, making improved algorithm get optimal scheme for networks.Simulation results show that AFSA can effectively improve of reducing costs, lifetime extended.
In this letter, we demonstrate high-performance lateral AlGaN/GaN hybrid anode diodes (HADs) with p-GaN stripe array gate (PSAG) structure much reduced turn-on voltage ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${V}_{\text {T}}$ </tex-math></inline-formula> ) compared reference HADs. Without field plates (FPs) or passivation, the PSAG-HAD an anode-cathode distance notation="LaTeX">${L}_{\text {AC}}$...
This work demonstrated a comprehensive design and modeling of enhancement-mode (E-mode) beta-phase gallium oxide ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\beta $ </tex-math></inline-formula> -Ga2O3) current-aperture vertical electron transistors (CAVETs) using TCAD simulation. A new -Ga2O3 CAVET [i.e., high mobility (HEMT)-CAVETs] was proposed by introducing delta-doped -(AlxGa...
GaN metal–insulator–semiconductor high electron mobility transistors (MIS-HEMTs) with scandium aluminum nitride Sc0.2Al0.8N/SiNX composite gate dielectric were demonstrated improved device performance in terms of current density, on-resistance, breakdown voltage, leakage, and collapse. MIS-HEMTs single-layer Sc0.2Al0.8N or SiNX also fabricated as reference. Notably, the collapse was reduced from ∼38.8% to ∼4.9% dielectric. The insertion thin layer can mitigate surface damage due ScAlN...
Light-emitting diodes (LEDs) are considered the optimal artificial light source for plant factories, yet further research is needed to understand impact of LED quality on growth. This experiment investigated growth and development butter lettuce under varying ratios red blue provided by LEDs. The specific effects different were systematically tracked recorded, with comprehensive measurements parameters photosynthetic characteristics. Empirical findings revealed that a higher component...
Ultrawide Bandgap kV-class β-Ga <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> O xmlns:xlink="http://www.w3.org/1999/xlink">3</inf> /GaN heterojunction based junction barrier Schottky (JBS) diodes are investigated using SILVACO TCAD simulation. The effects of p-GaN region thickness (h), width (w), and spacing (s) on the JBS comprehensively studied, where conventional (SBD) used as a reference. optimized exhibited higher breakdown...
The ON-resistance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${R}_{\text {ON}}{)}$ </tex-math></inline-formula> instability of vertical GaN PIN diodes under high-temperature (up to 400 °C) and forward voltages stress were comprehensively investigated. turn-on notation="LaTeX">${V}_{\text high temperature voltage generally stable, while the {ON}}$ devices was very pronounced these stresses. With...