A5101765199- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Thin-Film Transistor Technologies
- Semiconductor materials and interfaces
- Silicon Nanostructures and Photoluminescence
- Silicon and Solar Cell Technologies
- Radio Frequency Integrated Circuit Design
- Integrated Circuits and Semiconductor Failure Analysis
- Nanowire Synthesis and Applications
- Semiconductor Lasers and Optical Devices
- Ga2O3 and related materials
- ZnO doping and properties
- Quantum and electron transport phenomena
- Silicon Carbide Semiconductor Technologies
- Photonic and Optical Devices
- Advanced Memory and Neural Computing
- Metal and Thin Film Mechanics
- Ferroelectric and Negative Capacitance Devices
- Copper Interconnects and Reliability
- Electronic and Structural Properties of Oxides
- Advanced Semiconductor Detectors and Materials
- Microwave Engineering and Waveguides
- 3D IC and TSV technologies
Panthera Corporation
2025
Belize Zoo
2025
Hefei University
2024
AU Optronics (Taiwan)
2022
National Yang Ming Chiao Tung University
2009-2018
Academia Sinica
2015-2017
Institute of Electronics
1980-2012
Applied Materials (United States)
2012
National Applied Research Laboratories
1994-2005
National Central University
1993-2004
The Schottky barrier height of Ni on n-GaN has been measured to be 0.56 and 0.66 eV by capacitance–voltage (C–V) current–density–temperature (J–T) methods, respectively. Gallium nickel (Ga4Ni3) is formed as deposited the GaN film, which affects markedly. thermal stability also investigated annealing these specimens at various temperatures. Specimen temperatures above 200 °C leads formation nitrides Ni3N Ni4N interface GaN. These interfacial compounds change 1.0 0.8 C–V J–T Comparisons...
Schottky barriers on n-type GaN films grown by low-pressure metalorganic chemical vapor deposition are characterized and derived. A thin Pt or a Pd layer is deposited electron-gun evaporation to form contacts in vacuum below 1×10−6 Torr. The barrier heights of the n-GaN film determined be 1.04 1.03 eV current–voltage (C–V) current density–temperature (J–T) measurements, respectively. Also based C–V J–T measured height 0.94 0.91 eV, characteristics observed experiment compared with those Au...
The design and characteristics of junctionless (JL) bulk FinFET devices circuits are compared with the conventional inversion-mode (IM) using 3-D quantum transport device simulation. JL shows better short channel characteristics, including drain-induced barrier lowering, subthreshold slope, threshold voltage ( <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">V</i> <sub xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> ) roll-off at supply...
The characteristics and sensitivities of p-type junctionless (JL) gate-all-around (GAA) (JLGAA) nanowire transistors are demonstrated by simulating a 3-D quantum transport device with view to their use in CMOS technology. concentration dopants JL transistor is not as high that an n-type owing solid solubility boron silicon. However, we can midgap material gate electrode design appropriate threshold voltage. JLGAA exhibits favorable on/off current ratio better short-channel than conventional...
Abstract:Due to the subduction of Pacific plate and wedging Indian plate, area from Alxa Block Ordos in northeast margin Qinghai-Tibet Plateau has been experiencing intense tectonic activities, forming a north-south contact zone with complex geological structure developed faults. In this study, long-distance profile magnetotelluric sounding distributed across Block, Hetao Basin-Helan Mountain-Yinchuan Basin-Ordos was conducted, following conclusions were drawn by dimensional analysis,...
The current range of the jaguar (Panthera onca) spans sixty degrees latitude across eighteen countries in Western Hemisphere and covers approximately 7,000,000 km2. Throughout this geographical breadth, jaguars represent an essential component native biological diversity, but conflict revolving around real perceived depredation on livestock is a factor mortality. We developed structured questionnaire to evaluate effectiveness anti-depredation strategies from northern Mexico Argentina,...
We investigated multilevel resistance switching characteristics of the thin FeOx transition layer in a TiN/SiO2/FeOx/Fe structure by controlling current compliance and stopped voltage during set reset processes, respectively. It is observed that resistive state could be easily tunable external electric conditions. The memristive mechanism was characterized distinguishing electrical behaviors statistically, inferring process associated with mobile-ion-assisted electrochemical redox. Moreover,...
This paper presents a novel nonvolatile poly-Si-oxide-nitride-oxide-silicon-type Flash memory that was fabricated using hafnium oxide (HfO/sub 2/) nanocrystals as the trapping storage layer. The formation of HfO/sub 2/ confirmed number physical analytical techniques, including energy-dispersive spectroscopy and X-ray photoelectron spectroscopy. These newly developed nanocrystal cells exhibit very little lateral or vertical stored charge migration after 10k program/erase (P/E) cycles....
We report a low current collapse GaN-based high electron mobility transistor (HEMT) with an excellent thermal stability at 150 °C. The AlN was grown by N2-based plasma enhanced atomic layer deposition (PEALD) and shown refractive index of 1.94 633 nm wavelength. Prior to deposit on III-nitrides, the H2/NH3 pre-treatment led remove native gallium oxide. X-ray photoelectron spectroscopy (XPS) confirmed that oxide can be effectively decomposed hydrogen plasma. Following in situ ALD-AlN...
This paper proposes a mini-light-emitting diode (mini-LED) driving circuit that is driven by pulse width modulation (PWM) for the backlights of active-matrix (AM) liquid crystal displays (LCDs). The proposed compensates threshold voltage (V<sub>TH</sub>) variations low-temperature poly-crystalline silicon thin-film transistors (LTPS TFTs) and current-resistance (I-R) rise in VSS lines to supply stable current. Operating mini-LED at high luminous efficacy PWM method setting only TFT on path...
A defect selective passivation method to block the propagation of threading dislocations in GaN epitaxial growth is demonstrated. The done by using chemical etching locate sites, followed silicon oxide etched pits, and over growth. dislocation density regrown epilayer significantly improved from 1×109 4×107 cm−2. passivated epiwafer used grow light emitting diode output power fabricated chip enhanced 45% at 20 mA compared a reference one without passivation.
Non-uniformity in electric field causes early onset of tunneling near the edge InAs/GaSb hetero-junction field-effect transistors. When a small area, often an edge, junction has lower turn-on voltage, steep switching characteristic is degraded. Fermi pinning at InAs surface greatly worsen uniformity. We propose dual-metal gate structure to address non-uniformity issue. With proper choice work functions, can effectively suppress and significantly improve subthreshold swing.
In this paper, delta-doped InGaP/InGaAs pseudomorphic high-electron-mobility transistors (pHEMTs) with doping-profile modifications are investigated in order to improve the device linearity. The proposed modification was based on third-order intermodulation distortion (IM3) and intercept point (IP3) analysis using a simple equivalent circuit of devices. correlations extrinsic transconductance (Gm) IM3 IP3 indicate that flatness Gm, as function gate-bias causes lower level. On other hand,...
The generation of high-order Hermite-Gaussian (HG) beams at the Stokes wavelength in a YVO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> /Nd:YVO self-Raman laser with off-axis pumping is demonstrated. vortex field are successfully created by transforming these HG modes via an extra-cavity mode converter. stimulated Raman scattering (SRS) threshold pump power for diode-end-pumped theoretically analyzed to verify feasibility generating...
To improve the performance of hydrogenated amorphous-silicon carbide (a-SiC:H) p-i-n thin-film light-emitting diodes (TFLEDs), a TFLED with graded p-i junction was proposed and fabricated. The electroluminescence (EL) intensity more than 100 times higher that basic about 35 lower conventional green LED, at same injection current density. This significant improvement is attributed to better interface property enhancement hole efficiency by using graded-gap junction.< <ETX...
In the paper we present a tour guide system, which brings portable devices into museums to be your own expert guide. The purpose of system is construct mobile learning environment with positioning technology and devices. People who are in this would obtain detailed information, even history exhibit displayed text, voice or video clips. Moreover, unequal explanations, group learning, activities management provided proposed system.
We presented a study of high-performance GaN-based light emitting diodes (LEDs) using GaN nanopillars (NPs) structure grown on sapphire substrate by integrating RF-plasma molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). Nanoscale air voids were clearly observed at the interface between NPs overgrown layer cross-sectional scanning electron microscopy. It can increase light-extraction efficiency due to additional scattering. The transmission microscopy images...
An electrically driven nanopyramid green light emitting diode (LED) was demonstrated. The arrays were fabricated from a GaN substrate by patterned nanopillar etch, pillar side wall passivation, and epitaxial regrowth. Multiple quantum wells selectively grown on the facets of nanopyramids. LED emits wavelength under electrical injection. emission exhibits less carrier density dependent shift higher internal efficiency as compared with reference c-plane sample at same wavelength. It shows...
We report the fabrication and studies of electrically driven green, olivine, amber color nanopyramid GaN light emitting diodes (LEDs). InGaN/GaN multiple quantum wells (MQWs) were grown on semipolar facets. Compared with commonly used (0001) c-plane MQWs, facet has lower piezoelectric field, resulting in much faster radiative recombination efficiency. This is important for high In content MQWs. The measured internal efficiencies LED are 30%, 25%, 21%, respectively. non-radiative lifetime...
In this study, novel three-dimensional (3-D) nanoscale structures and methodology are demonstrated for application in high-efficiency core–shell nanorod (NR) light-emitting diodes (LEDs). The key to our successful growth of the is introduction passivation, which can be used selectively grow active layers desired structures. Through fabrication methodology, NR green LEDs exhibiting large nonpolar region homogeneous indium distributions without a point tip shape were achieved. Stable light...
100 ppm PH3 diluted in hydrogen is used as the n-type dopant gas Si and Si1−xGex epilayers grown by ultrahigh vacuum chemical vapor deposition (UHVCVD) using Si2H6 GeH4. The phosphorus concentration increases linearly at a small flow rate becomes nearly saturated higher rates, while only shows linear behavior with rate. growth rates of decrease seriously (∼50%) slightly (∼10%) increase rate, respectively. These results can be explained model based on enhancement desorption smaller different...