This paper describes the synthesis and characterization of new organic/inorganic hybrid materials formed from mixed oxide (Ti,Sn)O2 nanoparticles polyaniline (PANI). The preparation method is based on a sol−gel technique using titanium tetra-isopropoxide tin tetrachloride as precursors, two synthetic routes to hybrids formation were employed, addition aniline after or before sol formation. Different amounts used verify this effect characteristics materials. Samples characterized by thermal...

In this work the development of a magnetic metal-base transistor that operates by hole transport is reported. The constructed using p-type silicon as collector, Co base, and Cu2O emitter. Both base emitter are deposited electrochemical procedures. shows magnetic-field-dependent current gain magnetocurrent ∼40% observed for low value 2 mA.

We use evaporated C60 as the emitter in a vertical transistor structure with Au base and Si collector. The proportion of emitted electrons that overcome barrier is measured at least 0.99. Our metal-base easy to fabricate it does not involve wafer bonding or require perfect semiconductor-on-metal growth.

Abstract Inorganic semiconductor–metal–semiconductor transistors were developed more than 40 years ago. However, despite being potentially attractive for fast switching and sensor applications, they are difficult to produce usually show low base transport factors, thereby limiting their applicability. Recent developments in hybrid organic/inorganic transistors, however, demonstrate that high‐gain can be produced using simple technologies. Additionally, fabrication is compatible with...

Bipolar devices constructed using 60nm thick tris-(8-hydroxyquinoline) aluminum (Alq3) thin films sandwiched between a 200nm sulfonated polyaniline hole-injection electrode and Al∕Ca electron-injection show very high (up to 103%) magnetocurrent values. True-hole-only true-electron-only Alq3-based that make use of Si as charge carrier collecting electrode, electron injecting or Au hole are also proposed, prepared, characterized. In these true-single-carrier is not observed. This result...

We use evaporated C60 fullerene as emitter, a conducting polymer blend base, and Si collector in vertical transistor structure similar to metal-base transistor. The used base is poly(3,4-ethylenedioxythiophene): poly(styrenesulfonate). measured common-base current gain of our pseudo-metal-base (p-MBT) close 1.0. p-MBT straightforward fabricate compatible with conventional Si-based electronics.

We have fabricated a magnetic metal-base transistor using particularly simple processes. The emitter is organic, consisting of evaporated C60 or tris(8-hydroxiquinoline) aluminum, the base an electrochemically deposited Co∕Cu∕Co multilayer, and collector n-Si substrate. current measured in common-base configuration increases significantly presence applied field.

We report the preparation of inexpensive ethanol sensor devices using multiwalled carbon nanotube-polyvinyl alcohol composite films deposited onto interdigitated electrodes patterned on phenolite substrates. investigate frequency dependent response device conductance and capacitance showing that higher sensitivity is obtained at if used as sensing parameter. In case measurements, low frequency. Ethanol detection a concentration 300 ppm in air demonstrated. More than 80% variation occurs less 20 s.

In this work we present data from a novel p-type metal-base transistor with common-base gain α∼1, fabricated at ambient temperature and pressure by electrodepositing sequentially on Si collector, Co base Cu2O emitter. The high the dependence of potential between emitter (VEB) collector (VCB) when current (IE) is held constant both suggest that device functions as natural permeable for very thin metal bases.

We report on the performance enhancement of organic field-effect transistors prepared using cross-linked poly(vinyl alcohol) as gate dielectric and copper phthalocyanine channel semiconductor through surface treatment. The was treated either a cationic surfactant, hexadecyltrimethylammonium bromide (CTAB), or an anionic sodium dodecyl sulfate (SDS). determined charge-carrier mobility ( μFET) in these function effective thickness bottleneck, near to transistor source. When compared untreated...

Abstract We report the development of a hybrid semiconductor–metal–semiconductor permeable‐base transistor in vertical architecture, which operates by positive charge carrier transport. This has p‐type silicon collector, thin tin layer as base and conjugated polymer, poly(9,9‐dioctyl‐2,7‐ fluorenylenevinylene), emitter material. The transport characteristics are dependent on applied magnetic field factor for carriers is nearly ideal. (© 2005 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)

We demonstrate the production of copper phthalocyanine (CuPc) based p-type hybrid permeable-base transistors, which operate at low voltages having high common-base current gains. These transistors are prepared by evaporating a thin metal layer (Ag or Al) that acts as base on top Si substrate collector. In sequence CuPc and Au thermally sublimated to produce emitter, constituting quite simple device procedure with additional advantage allowing higher integration due its vertical architecture.

Purpose This study aims to investigate the production of scaffolds by selective laser sintering (SLS) using poly(vinyl alcohol) (PVA) polymer, for in vitro studies, a relatively new and growing area which could be used design three-dimensional models disease model or tissue equivalent safety effectiveness tests. Design/methodology/approach The influence SLS process parameters power, 26 W 32 W, number scans, 1, 2, 4 6, on surface microstructure samples degree crystallinity chemical stability...

The charge carrier mobility is an important parameter that directly affects the performance of organic field‐effect transistors. We use copper phthalocyanine (CuPc)‐based transistors having crosslinked poly(vinyl alcohol) (cr‐PVA) as gate insulator to study variation in CuPc with distance from interface. By measuring carriers flowing along channel a function minimum thickness effective near transistor source, we demonstrate low interface and shows maximum at approximately 5 nm dependence on...

We report the construction of hybrid permeable-base transistors, in vertical architecture, using tris(8-hydroxyquinoline) aluminum as emitter, a thin gold layer base, and n-type silicon collector. These transistors present high common-base current gain, can be operated at low driving voltages, allow density.