A5072896238- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Ga2O3 and related materials
- Semiconductor Quantum Structures and Devices
- Radio Frequency Integrated Circuit Design
- solar cell performance optimization
- Atrial Fibrillation Management and Outcomes
- Climate Change and Health Impacts
- Air Quality and Health Impacts
- Acoustic Wave Resonator Technologies
- Health disparities and outcomes
- Thermal Radiation and Cooling Technologies
- Protease and Inhibitor Mechanisms
- Advanced Neural Network Applications
- COVID-19 diagnosis using AI
- Brain Tumor Detection and Classification
- Multimodal Machine Learning Applications
- Cardiovascular Disease and Adiposity
- AI and Big Data Applications
- Thin-Film Transistor Technologies
- Takotsubo Cardiomyopathy and Associated Phenomena
- Explainable Artificial Intelligence (XAI)
- Sports Performance and Training
- Cancer, Hypoxia, and Metabolism
Henan Provincial People's Hospital
2025
State Nuclear Power Technology Company (China)
2025
Zhengzhou University
2023-2024
Massachusetts Institute of Technology
2018-2024
Beihang University
2021-2024
Jilin University
2024
Apple (United States)
2023
Dalian Medical University
2022-2023
First Affiliated Hospital of Dalian Medical University
2022-2023
Shenzhen University
2023
This paper demonstrates a complementary logic circuit (an inverter) on GaN-on-Si platform without the use of regrowth technology. Both n-channel and p-channel GaN transistors are monolithically integrated GaN/AlGaN/GaN double heterostructure. N-channel FETs show enhancement-mode (E-mode) operation with threshold voltage around 0.2 V, ON-OFF current ratio 107 RON 6 Ω · mm, while E-mode Vth -1 104 2.3 kQ·mm. Complementary inverters fabricated this technologyyield record maximum gain ~27 V/V at...
This letter demonstrates a novel technology to fabricate fully vertical GaN-on-Si power diodes with state-of-the-art performance. Si substrate and buffer layers were selectively removed the bottom cathode was formed in backside trenches extending an n <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">+</sup> -GaN layer. A specific differential ON-resistance of 0.35-0.4 mΩ·cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> (normalized total...
This letter reports an enhancement-mode (E-mode) GaN transistor technology which has been demonstrated to operate in a simulated Venus environment (460 °C, ~ 92 atm., containing CO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> /N /SO etc.) for 10 days. The robustness of the W/p-GaN-gate AlGaN/GaN high electron mobility (HEMT) was evaluated by two complementary approaches, (1) <italic...
This article reports on the scaling of GaN complementary technology (CT) a silicon substrate to push its performance limits for circuit-level applications. The highly scaled self-aligned (SA) p-channel FinFET (a fin width 20 nm) achieved an <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">${I}_{D,\text {max}}$ </tex-math></inline-formula> −300 mA/mm and notation="LaTeX">${R}_{ \mathrm{ ON}}$...
This Letter reports the device and material investigations of enhancement-mode p-GaN-gate AlGaN/GaN high electron mobility transistors (HEMTs) for Venus exploration other harsh environment applications. The GaN transistor in this work was subjected to prolonged exposure (11 days) a simulated (460 °C, 94 bar, complete chemical including CO2/N2/SO2). mechanisms affecting performance structural integrity were analyzed using variety experimental, simulation, modeling techniques, situ electrical...
This Letter reports the stability of regrown and alloyed Ohmic contacts to AlGaN/GaN-on-Si high electron mobility transistors (HEMTs) for temperature applications up 500 °C. Transfer length method (TLM) measurements from 25 °C in air show that appear be stable during short term (approximately 1 h) testing, while decrease contact resistance 300 though increases error bounds due increase sheet make it difficult conclude definitely. Additionally, longer testing shows both technologies remain at...
A study of GaN for high temperature (HT, up to 500 °C) digital circuits was conducted. HT-robust GaN-on-Si technology based on enhancement-mode p-GaN-gate AlGaN/GaN electron mobility transistors (HEMTs) and depletion-mode HEMTs proposed used implement different circuit configurations, namely E/D-mode E/E-mode (E: enhancement, D: depletion). The inverter found offer significantly better performance in terms voltage swing, noise margin, gain, across <inline-formula...
This work proposes a multimetal gated (MMG) architecture to improve the linearity of AlGaN/GaN high-electron-mobility transistor (HEMT). The general idea this is use different gate metals along width device. Through experimentally calibrated technology computer-aided design (TCAD) simulation, selection with widths that yields lowest value third-order transconductance ( <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math...
Abstract This paper reports an effective way of improving the linearity AlGaN/GaN High Electron Mobility Transistors (HEMTs) by modulating AlGaN barrier thickness under gate electrode along its width. produces offset in local equivalent threshold voltage (VT ), and consequently, proposed device acts as multiple transistors with a VT connected parallel configuration. Due to resulting gm3 cancellation, new device&#xD;structure exhibits 10-fold suppressed peak compared conventional...
In this work, we demonstrate a self-aligned p-FET with GaN/Al <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">0</inf> 2Ga 8N (20 nm)/GaN heterostructure grown by metal-organic-chemical vapor deposition (MOCVD) on Si substrate. Our 100 nm channel length device recess depth of 70 exhibits record ON-resistance 400 Ω•mm and ON-current over 5 mA/mm ON-OFF ratio 6×10 <sup xmlns:xlink="http://www.w3.org/1999/xlink">5</sup> when compared other...
This paper reports on the high temperature (HT) robustness of enhancement-mode (E-mode) p-GaN-gated Al-GaN/GaN electron mobility transistors (HEMTs), with an emphasis key transistor-level parameters for digital and analog mixed-signal applications. In-situ measurements from room (RT) to 500 °C show that trends in V <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</inf> , R xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> I...
This article reports advances in high temperature (HT) GaNon-Si technology by taking pioneering steps towards design co-optimization (DTCO). A computer-aided (CAD) framework was established and experimentally validated up to $500 ^{\circ}\mathrm{C}$, the highest achieved such a for GaN technology. made possible thanks (1) demonstration of multiple key functional building blocks (e.g. arithmetic logic unit (ALU)) proposed at HT; (2) calibrated transistor compact models ^{\circ}\mathrm{C}($...
The most commonly used memory cells, namely a 32-bit <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\times10$ </tex-math></inline-formula> -bit read-only memory, 1-bit 4-transistor static random-access D latch, and flip-flop (DFF), were demonstrated using high temperature (HT) GaN technology on monolithically integrated GaN-on-Si platform n-FET-only E/D-mode logic (E: enhancement, D: depletion). cells...
This Letter reports the performance of vertical GaN-on-GaN p–n diodes with etch-then-regrown p-GaN after exposure to a simulated Venus environment (460 °C, ∼94 bar, containing CO2/N2/SO2 etc., atmosphere) for over 10 days, and compared them GaN without etch-then-regrow process. After above-mentioned test, temperature-dependent I–V microscopy investigation were conducted study robustness under harsh environments operation up 500 °C. p-electrode degradation is found be main issue device's...
Vascular aging is associated with metabolic remodeling, and most studies focused on fatty acid glucose metabolism. Based our metabolomic data, leucine was significantly reduced in the aortas of aged mice. Whether supplementation can reverse aging-induced vascular remodeling remains unknown. To investigate effectiveness leucine, male mice at 15 or 18 months were supplemented (1.5%) for 3 months. All mice, without sacrificed 21 Blood pressure relaxation measured. H&E, Masson’s trichrome,...
This paper reports on the scaling of self-aligned GaN complementary technology a GaN-on-Si platform to push its performance limits for circuit-level applications. The highly scaled p-channel FinFET (fin width =20 nm) achieved $I_{D,max}$ -300 mA/mm and R <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">ON</inf> $27 \Omega \cdot$ mm, record metal organic chemical vapor deposition (MOCVD)-grown III-N p-FETs. A systematic study impact fin recess...
The performance of GaN CMOS technology was systematically evaluated through experimentally calibrated simulations. Logic inverters based on self-aligned p-FETs and n-FinFETs with W <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">p</sub> /W xmlns:xlink="http://www.w3.org/1999/xlink">n</sub> =5 exhibit 1.4 V logic-low noise margin (NML) 2.8 high (NMH) for xmlns:xlink="http://www.w3.org/1999/xlink">DD</sub> V. Simulations also confirmed that logic...
Left atrial volume index (LAVI) is an adequate analysis to predicate the left ventricle (LV) filling pressures, providing a powerful predictive marker of LV diastolic dysfunction. LAVI dynamic morphophysiological marker, and whether changes can clinical outcomes in HF with preserved ejection fraction (HFpEF) unknown.HFpEF patients were retrospectively studied from First Affiliated Hospital Dalian Medical University. Patients classified into deteriorated, stable improved groups according...
In this work we report a novel method to directly characterize the luminescent coupling efficiency of multijunction solar cells. Our uses small-signal light bias, which enables measurement under different voltage and is unachievable by traditional methods. With method, further demonstrate dependence showed that at maximum power point can be 40–60% higher than short-circuit point. This provides useful tool for cell characterization, potentially leads deeper understanding effects, enabling...