A5088804371- Advanced Data Storage Technologies
- Semiconductor materials and devices
- Caching and Content Delivery
- Privacy-Preserving Technologies in Data
- Advanced Manufacturing and Logistics Optimization
- Vehicular Ad Hoc Networks (VANETs)
- Energy and Environment Impacts
- Hybrid Renewable Energy Systems
- Cellular Automata and Applications
- Tryptophan and brain disorders
- Parallel Computing and Optimization Techniques
- Safety Systems Engineering in Autonomy
- Ferroelectric and Negative Capacitance Devices
- Magnetic properties of thin films
- Stress Responses and Cortisol
- Urban and Freight Transport Logistics
- Advanced Malware Detection Techniques
- Treatment of Major Depression
Huazhong University of Science and Technology
2019-2022
First Affiliated Hospital of Zhengzhou University
2022
Portland State University
2020
Modern vehicles are equipped with more than 100 Electrical Control Units (ECUs) over 2500 signals to transmit internally. The application of advanced electronics and communication techniques helps a vehicle transform from an information island into powerful distribution center. However, large number ECUs have introduced wider range security threats for vehicles. attackers can compromise remotely through vulnerable ECU. How evaluate the cyber in-vehicle has become important issue. Current...
In Solid State Drives, flash management techniques such as wear-leveling and refresh usually assume NAND memories have the same endurance value. However, actual values differ from blocks to blocks. This reliability difference is introduced by process-variation during fabrication. recent years, for improving techniques, various works been done on variation of 2D memory. As transmitted 3D flash, vertical structure multi-layer stacking changed effect previously known problems. this paper, we...
NAND flash memory has gained popularity in a wide variety of digital storage systems. Although with excellent performance, suffers various reliability problems. In recent years, researchers try to predict failure by using machine-learning models. However, the application based prediction method faces following problems: imbalance between robustness and portability. When applying on different chips, performance model degrades variation error characteristics. order adapt variation, needs be...
NAND flash memory is widely used in communications, commercial servers, and cloud storage devices with a series of advantages such as high density, low cost, speed, anti-magnetic, anti-vibration. However, the reliability increasingly getting worse while process improvements technological advancements have brought higher densities to memory. The degradation not only reduces lifetime but also causes be replaced prematurely based on nominal value far below minimum actual value, resulting great...
NAND flash memory has become increasingly popular in various computing systems. Although offers attractive performance, it suffers limited operable programming and erasing cycles. To improve the reliability of flash-based systems, previous works introduce machine learning models to predict lifetime. These generally focus on improving prediction accuracy but present little research about resources required for lifetime prediction. In application scenarios, overheads frequency predictions are...
The endurance of NAND flash memory continues to decrease with process scaling, leading a decline in the reliability storage system and rise on risk data corruption. To enhance system, we utilize neural network model high accuracy full application, predict how far each block can be cycled before uncorrectable errors occur. input includes program-time, erase-time raw bit error (RBE) measured by FPGA (Field-Programmable Gate Array) its output is specific numerical value endurance. Based this...
Wear-out has been a critical reliability problem in NAND flash memory. As executing repeated program and erase operations on the chips, number of errors increases ultimately exceeds ECC capability. In previous work, error characteristics wear-out are observed by endurance tests single type We wonder if experimental results cover entire this paper, we tested more than 20 types chips with different vendors structures presented an overlook test results. Through results, found unexpected...
In this work, an unexpected failure phenomenon in 3D NAND flash memory was fist studied. It found that the raw bit errors of might suddenly increase during P/E cycling and result endurance failure. And effective controller-embedded predictor constructed by FPGA to prevent memory. Simulation results show is able effectively improve lifetime 1.7 × -7.9x.
With the continuous scaling of NAND flash memory process technology, traditional solution for endurance enhancement is incapable meeting demands reliability. It's necessary to design an effective algorithm overcome this problem. In paper, we investigated error characteristics under various types operations build a well understanding failure mechanism. On foundation analysis, propose new adaptive correction algorithm. The can extend lifetime by employing error-correct methods adaptively with...