A5103196700- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Advanced Photonic Communication Systems
- Electron and X-Ray Spectroscopy Techniques
- Physics of Superconductivity and Magnetism
- Surface and Thin Film Phenomena
- Ion-surface interactions and analysis
- Force Microscopy Techniques and Applications
- X-ray Spectroscopy and Fluorescence Analysis
- Semiconductor materials and devices
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic and transport properties of perovskites and related materials
- Advanced Condensed Matter Physics
- Magnetic properties of thin films
- Mechanical and Optical Resonators
- Quantum and electron transport phenomena
- Advancements in Photolithography Techniques
- Theoretical and Computational Physics
- Advancements in Solid Oxide Fuel Cells
- Diamond and Carbon-based Materials Research
- Metal and Thin Film Mechanics
- Advanced Electron Microscopy Techniques and Applications
- Nuclear Physics and Applications
- Electrocatalysts for Energy Conversion
- Semiconductor materials and interfaces
Canadian Standards Association
2019-2021
Ulvac-Phi (Japan)
2004-2020
National Institute for Materials Science
2018-2020
Seikagaku Corporation (Japan)
2020
Rigaku (Japan)
2020
Osaka Gas (Japan)
1992-2019
Osaka Electro-Communication University
2016
Thermo Fisher Scientific (Japan)
2015
Kyoto University
1985-2011
Osaka University
1990-2009
Elastic, quasielastic, and inelastic neutron scattering measurements in ${\mathrm{La}}_{2}$${\mathrm{CuO}}_{4}$ reveal novel two-dimensional antiferromagnetic behavior. At high temperatures the spins are ordered instantaneously over long distances two dimensionally but there is no measurable time-averaged staggered moment. The energy scale of spin fluctuations large, corresponding to an effective dispersion \ensuremath{\gtrsim}0.4 eV A\r{}. relevance high-temperature superconductivity this...
We report elastic, quasielastic (F dE), and inelastic neutron-scattering studies of the instantaneous dynamic spin fluctuations in as-grown doped ${\mathrm{La}}_{2}$${\mathrm{CuO}}_{4}$. Four samples have been studied: (A) ${\mathrm{La}}_{2}$${\mathrm{CuO}}_{4}$ with ${T}_{N}$=195 K, (B) oxygenated ${\mathit{T}}_{\mathit{N}}$\ensuremath{\simeq}100 (C) ${\mathrm{La}}_{2}$${\mathrm{Cu}}_{0.95}$${\mathrm{Li}}_{0.05}$${\mathrm{O}}_{4}$, (D)...
We have carried out elastic, quasielastic ($\ensuremath{\int} \mathrm{dE}$), and inelastic neutron scattering studies of the antiferromagnetic spin correlations in ${\mathrm{La}}_{2\ensuremath{-}x}{\mathrm{Sr}}_{x}\mathrm{Cu}{\mathrm{O}}_{4}$ with $x$ varying between 0.02 0.18. The crystals, which were grown three different laboratories, exhibit behavior that varies smoothly $x$. In all cases, a amplitude corresponding to fully occupied ${\mathrm{Cu}}^{2+}$ square lattice are observed....
A novel structure electroabsorption modulator/DFB laser integrated device is proposed and demonstrated. Both functional devices consist of MQW structures with different quantum energy levels, which are automatically formed in the same MOCVD run by using a selective area growth technique. fundamental modulation 12.6dB extinction ratio
We experimentally investigated a force interaction between Si tip and the Si(111)7\ifmmode\times\else\texttimes\fi{}7 reconstructed surface using noncontact-mode atomic-force microscope (AFM) in ultrahigh vacuum. Two types of gradient curves with without discontinuity were found. Furthermore, correlation noncontact AFM image contrasts has been clarified. The contrast was very weak case curve discontinuity, while it clearly enhanced inequivalent adatoms obtained discontinuity. can be...
Abstract Results are reported from a pilot study under the Consultative Committee for Amount of Substance (CCQM) to compare measurements and resolve any relevant measurement issues in amount thermal oxide on (100) (111) orientation silicon wafer substrates thickness range 1.5–8 nm. As result invitation participate this activity, 45 sets have been made different laboratories using 10 analytical methods: medium—energy ion scattering spectrometry (MEIS), nuclear reaction analysis (NRA), RBS,...
We have studied the spin-wave excitations near two-dimensional zone center at 80 K in a single crystal of ${\mathrm{La}}_{2}$Cu${\mathrm{O}}_{4}$ which orders ${T}_{N}=195$ K. In-plane and out-of-plane modes are observed energies 1.0\ifmmode\pm\else\textpm\fi{}0.25 meV 2.5\ifmmode\pm\else\textpm\fi{}0.5 meV, respectively, The in-plane mode energy is determined primarily by antisymmetric exchange it measures this term directly. corresponds to planar anisotropy \ensuremath{\sim}0.016 meV....
Abstract An Ar Gas Cluster Ion Beam (GCIB) has been shown to remove previous + ion beam‐induced surface damage a bulk polyimide (PI) film. After removal of the damaged layer with GCIB sputter source, XPS measurements show minor changes carbon, nitrogen and oxygen atomic concentrations relative original elemental concentrations. The depth profiles showed that there is linear relationship between beam voltage within range from 0.5 4.0 keV dose argon cluster ions required layer. rate recovery...
We have investigated the tunneling properties of intrinsic Josephson junction stacks with various numbers $N$ Cu${\mathrm{O}}_{2}$ bilayers fabricated on underdoped ${\mathrm{Bi}}_{2}{\mathrm{Sr}}_{2}\mathrm{Ca}{\mathrm{Cu}}_{2}{\mathrm{O}}_{8+\ensuremath{\delta}}$ single crystals. The effect gap suppression based primarily nonequilibrium superconductivity can be significantly reduced a reduction in $N$. For an as few 40, both pair and quasiparticle characteristics are clearly observed. It...
X-ray photoelectron spectroscopy depth profiling of polyimide thin films on silicon substrates using an Ar cluster ion beam results in extremely low degradation the chemistry. In range from 2.5 to 20 kV, a lower energy produces sputter induced damage polymer and improved interface width. The sputtering rates are found increase exponentially with energy.
The step structure of a vicinal Si(111) surface misoriented 10\ifmmode^\circ\else\textdegree\fi{} to [112\ifmmode\bar\else\textasciimacron\fi{}] is studied using high-temperature scanning tunneling microscopy (STM). Phase transitions on the are observed in real time an atomic scale. During cooling from above (1\ifmmode\times\else\texttimes\fi{}1)-to-(7\ifmmode\times\else\texttimes\fi{}7) transition temperature, slender (111) facets with 7\ifmmode\times\else\texttimes\fi{}7 appear, and these...
Abstract Long‐term performance testes by CRIEPI (Central Research Institute for Electric Power Industry) on six industrial stacks have revealed an interesting correlation between cathode polarization loss and ohmic loss. To make clear the physicochemical meaning of this correlation, detailed analyses were made conductivity degradation YSZ electrolyte in button cells then losses terms time constants which are determined from speed tetragonal transformation through Y diffusion cubic phase to...
Abstract Achievements of NEDO durability projects on SOFC mode are summarized with a focus the physicochemical mechanisms characterized by diffusion properties cell components and chemical reactions gaseous impurities. Ni sintering depletion including impurity (P, B, S) effects have been examined in terms surface/interface energies Ni/oxide cermet anodes. The conductivity degradation due to transformation cubic YSZ electrolyte was found be two time constants for reductive oxidative regions...
Introducing a 1% compressive strained multiquantum-well (MQW) active layer into corrugation-pitch-modulated distributed feedback (CPM-DFB) laser reduces the linewidth floor (residual for extrapolated infinite output power) to 2 kHz and results in linewidth-power product of 140 mW. Strained MQW CPM-DFB lasers produced 55 mW with spectral only 3.6 kHz.
The authors propose a very simple tunable laser with striped thin-film heater. wavelength of this changes sensitivity 3.2 nm/W to the input heating power. This can be continuously tuned over range 4 nm while maintaining an optical power 20 mW and linewidth less than 2.5 MHz. When is mounted on module, its 90% response time 6 ms, which fast enough for use as local oscillator in several applications. >
The effects of photoinduced hole doping, caused by persistent photoconductivity, on the normal and superconducting properties ${\mathrm{YBa}}_{2}$${\mathrm{Cu}}_{3}$${\mathrm{O}}_{\mathit{y}}$ (6.35\ensuremath{\le}y\ensuremath{\le}6.70) thin films are studied using a high-power-density He-Ne laser light. Substantial enhancements both conductivity ${\mathit{T}}_{\mathit{c}}$ found for all films. Hall measurements reveal that number holes depends only photon dose is independent oxygen content....
We show that domains of reconstructed silicon surfaces can be imaged by secondary electrons (SEs) using an ultrahigh vacuum scanning electron microscope with a SE detector having angular resolvability. The images clearly the double domain structure, alternate 2×1 and 1×2 on Si(100), as well coexistence 7×7 nonreconstructed 1×1 Si(111). These results demonstrate emission is sensitive to atomic configuration topmost layers. call this microscopy based technique for top layer imaging surface...
The upper critical magnetic field ${H}_{c2}$ of ${\mathrm{Ba}}_{2}\mathrm{Y}{\mathrm{Cu}}_{3}{\mathrm{O}}_{7\ensuremath{-}y}$ single crystals is estimated from the resistive transition curves as a function temperature and direction. exhibits large anisotropy between $c$ axis $a\ensuremath{-}b$ plane. data have linear dependence, giving well-defined $\frac{d{H}_{c2}}{\mathrm{dT}}$ values: -0.56 T/K for -3.3 angular dependence in good agreement with effective-mass model when ratio...
The structure of a vicinal Si(111) stepped surface is analyzed by force microscopy in air to reveal fine step bunching area, and monoatomic terrace region. Step heights one three layers were also observed on debunched surface. These steps have low crystallographic indices [112̄], [101̄], [01̄1], [213̄], [ 1̄2̄3]. microscope images good agreement with scanning electron reflection ultrahigh vacuum just after sample annealing resistive heating.