A5084775403- Electron and X-Ray Spectroscopy Techniques
- Surface and Thin Film Phenomena
- Crystallography and Radiation Phenomena
- Advanced Electron Microscopy Techniques and Applications
- Semiconductor materials and interfaces
- Semiconductor materials and devices
- Advanced Chemical Physics Studies
- X-ray Spectroscopy and Fluorescence Analysis
- Advanced X-ray Imaging Techniques
- Advanced Materials Characterization Techniques
- Ion-surface interactions and analysis
- X-ray Diffraction in Crystallography
- Magnetic properties of thin films
- Electronic and Structural Properties of Oxides
- Silicon Carbide Semiconductor Technologies
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- Advanced Condensed Matter Physics
- Graphene research and applications
- Ga2O3 and related materials
- Nuclear materials and radiation effects
- Iron-based superconductors research
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Copper Interconnects and Reliability
Toyota Central Research and Development Laboratories (Japan)
2019-2024
Toyota Physical and Chemical Research Institute
2019-2024
Nara Institute of Science and Technology
2012-2022
John Wiley & Sons (United States)
2018
Interface (United Kingdom)
2018
Osaka University
1992-2016
The University of Tokyo
1988-2014
Czech Academy of Sciences, Institute of Physics
2014
Sophia University
2014
Tokyo Institute of Technology
2014
Vacuum-ultraviolet reflectance and photoemission spectra of ${\mathrm{VO}}_{2}$, ${\mathrm{V}}_{2}$${\mathrm{O}}_{3}$, ${\mathrm{V}}_{6}$${\mathrm{O}}_{13}$, ${\mathrm{V}}_{2}$${\mathrm{O}}_{5}$ are measured in order to investigate the 3d-band structures electron-correlation effects. In case drastic changes 3d (${\mathrm{\ensuremath{\pi}}}^{\mathrm{*}}$ ${\mathit{d}}_{\mathrm{?}}$) -band found both through metal-insulator phase transition. The ${\mathrm{\ensuremath{\pi}}}^{\mathrm{*}}$...
Electrical properties of unintentionally doped n-type and Al-doped p-type 3C-SiC layers, epitaxially grown on Si by chemical vapor deposition, have been investigated at temperatures between 10 1000 K. Activation energies Al acceptors residual donors obtained from the temperature dependence carrier density are 160 18 meV, respectively. 40%–60% in epilayers compensated, hole mobility is limited acoustic phonon scattering above 300 K ionized impurity below 250
A new method for chemical analysis of surfaces by total-reflection-angle X-ray spectroscopy in RHEED experiments (RHEED-TRAXS) has been developed. When the take-off angle is set to be critical total reflection characteristic emitted from deposited atoms on surfaces, detection efficiency deposit becomes drastically higher owing refraction effect X-ray. This enhancement surface sensitivity demonstrated with Ag Si(111). The smallest detectable amount about 0.01 monolayer or less. comparable...
Strong circular dichroism is found in 2-dimensional angular distribution patterns of the Si 2p photoelectrons from Si(001) surface, which has no chirality and magnetism. The forward focusing peaks pattern rotate clockwise or counterclockwise when helicity incident circularly polarized light reversed. These rotations are explained by rotational motion around nuclei. This first direct observation electrons clarifies correspondence between classical quantum mechanical ideas momentum.
A principle for stereoscopic photographs that enables viewing three-dimensional atomic arrangements is proposed. The azimuthal shifts of forward-focusing peaks in the photoelectron diffraction pattern obtained by left and right helicity lights a image when two images are, respectively, viewed eye simultaneously. By taking advantage this phenomenon, display-type spherical-mirror analyzer can obtain directly on screen without any computer-aided conversion process.
Surface electronic states of the Si(111)3\ifmmode\times\else\texttimes\fi{}1-K surface are studied by means angle-resolved ultraviolet photoelectron spectroscopy along [112\ifmmode\bar\else\textasciimacron\fi{}] and [101\ifmmode\bar\else\textasciimacron\fi{}] directions. It is found that ${\mathrm{S}}_{1}$ state (\ensuremath{\sim}0.2 eV below Fermi level) 7\ifmmode\times\else\texttimes\fi{}7 disappears ${\mathrm{S}}_{2}^{\ensuremath{'}}$ ${\mathrm{S}}_{3}^{\ensuremath{'}}$ appear near...
Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown an Si substrate. The device showed acceptable static characteristics. A novel structure was devised, which enabled use of conventional equipment silicon devices, and eliminated dedicated processes stable rigid SiC film.
Internal stress in 3C-silicon carbide (SiC) epilayers grown on Si substrates by chemical vapor deposition was studied using Raman scattering. The the Si(001) at 1350 °C found to be 5.4×109 dyn/cm2 tensile, which is comparable that of silicon sapphire. magnitude discussed terms elastic deformation theory. It there not so much difference between 3C-SiC and Si(111) as theory suggests.
We have determined the schematic phase diagram in detail with high reliability for Fe silicides grown by solid epitaxy (SPE) on a $\mathrm{Si}(111)7\ifmmode\times\else\texttimes\fi{}7$ surface at wide coverage $(0.2--56\phantom{\rule{0.3em}{0ex}}\mathrm{monolayers})$ and subsequent annealing temperatures from 300 to $800\phantom{\rule{0.2em}{0ex}}\ifmmode^\circ\else\textdegree\fi{}\mathrm{C}$. In SPE growth, $\ensuremath{\delta}\text{\ensuremath{-}}7\ifmmode\times\else\texttimes\fi{}7$,...
Up until now there has been no direct method for detecting the electronic and magnetic structure of each atomic layer at surface, which is an essential analysis technique nanotechnology. For this purpose, we have developed a new method, diffraction spectroscopy, based on photon energy dependence angular distribution Auger electron emission. We applied to analyze Ni ultrathin film Cu(001) surface around spin reorientation transition. Atomic-layer resolved x-ray absorption circular dichroism...
The spin states of ${\mathrm{Co}}^{3+}$ ions in perovskite-type ${\mathrm{LaCoO}}_{3}$, governed by the complex interplay between electron-lattice interactions and strong electron correlations, still remain controversial due to lack experimental techniques which can directly detect them. In this Letter, we revealed tensile-strain dependence states, i.e., ratio high- low-spin epitaxial thin films a bulk crystal ${\mathrm{LaCoO}}_{3}$ via resonant inelastic soft x-ray scattering. A tensile...
Rocking curves of reflection high-energy electron diffraction (RHEED) have been measured from the Si(111)-(\ensuremath{\surd}3 \ifmmode\times\else\texttimes\fi{} \ensuremath{\surd}3 )R30\ifmmode^\circ\else\textdegree\fi{}-Al, -Ga, and -In surfaces at [21\ifmmode\bar\else\textasciimacron\fi{} 1\ifmmode\bar\else\textasciimacron\fi{}] incidence. Dynamical calculations RHEED intensities reliability-factor minimization carried out to obtain optimal surface structures for three surfaces. Three...
With the use of some obstacle rings and a set retarding grids, resolution prototype spherical mirror analyzer, which has been developed in previous paper [H. Daimon, Rev. Sci. Instrum. 59, 545 (1988)], was improved. The uniformity with respect to emission angle also achieved. Some examples electron energy-loss spectra XPS spectrum were presented.
Current methods for reconstructing three-dimensional atomic arrangements from photoelectron holograms require data sets recorded using multiple incident photon energies. These techniques are thus difficult to apply Auger-electron holography, since the kinetic energy of Auger electron is element specific and independent excitation energy. We propose a scattering pattern extraction algorithm maximum-entropy method arrangement single-energy hologram. The provides clear image by taking into...
The most widely used methods for reconstructing three-dimensional atomic arrangements from a photoelectron hologram and an x-ray fluorescence are based on integral kernel, example, the Fourier transformation. These require many holograms that recorded using multiple energies since transformation requires infinite interval. Therefore, it is difficult to reconstruct arrangement single-energy hologram. In order accomplish hologram, we have proposed scattering pattern extraction algorithm...
Time-resolved soft X-ray photoelectron spectroscopy (PES) experiments were performed with time scales from picoseconds to nanoseconds trace relaxation of surface photovoltage on the ZnO(0001) single crystal in real time. The band diagram has been obtained numerically using PES data, showing a depletion layer which extends 1 μm. Temporal evolution effect is well explained by recombination process thermionic model, giving photoexcited carrier lifetime about ps at under flat condition. This...
We study the electronic structure of bulk single crystals and epitaxial films ${\mathrm{Fe}}_{3}{\mathrm{O}}_{4}$. Fe $2p$ core level spectra show clear differences between hard x-ray (HAX) soft photoemission spectroscopy (PES). The bulk-sensitive exhibit temperature ($T$) dependence across Verwey transition, which is missing in surface-sensitive spectra. By using an extended impurity Anderson full-multiplet model---and contrast to earlier peak assignment---we that two distinct species ($A$...