Tsunaki Takahashi

ORCID: 0000-0002-2840-8038
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About
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Research Areas
  • Gas Sensing Nanomaterials and Sensors
  • Semiconductor materials and devices
  • Advancements in Semiconductor Devices and Circuit Design
  • Analytical Chemistry and Sensors
  • ZnO doping and properties
  • Silicon Carbide Semiconductor Technologies
  • Nanowire Synthesis and Applications
  • Advanced Chemical Sensor Technologies
  • Optical Network Technologies
  • Electronic and Structural Properties of Oxides
  • Advanced Photonic Communication Systems
  • Advanced Memory and Neural Computing
  • Semiconductor Lasers and Optical Devices
  • Graphene research and applications
  • Electromagnetic Compatibility and Noise Suppression
  • Ferroelectric and Negative Capacitance Devices
  • Thermal properties of materials
  • Advanced Optical Network Technologies
  • Catalytic Processes in Materials Science
  • Transition Metal Oxide Nanomaterials
  • Molecular Junctions and Nanostructures
  • Advanced biosensing and bioanalysis techniques
  • Electrochemical sensors and biosensors
  • Electrostatic Discharge in Electronics
  • Integrated Circuits and Semiconductor Failure Analysis

The University of Tokyo
1988-2025

Kyushu University
2001-2024

Japan Science and Technology Agency
2004-2023

Graduate School USA
2021

Bunkyo University
2021

Kasugai Municipal Hospital
2020

Sendai Nishitaga National Hospital
2018

Keio University
1982-2017

NTT (Japan)
1994-2015

Kyoto University Research Reactor Institute
2014

Abstract The first ambipolar light‐emitting transistor of an organic molecular semiconductor single crystal, tetracene, is demonstrated. In the device configuration, electrons and holes injected from separate magnesium gold electrodes recombined radiatively within channel. By varying applied voltages, position recombination/emission zone could be moved to any along Because changes made structure, including use crystals polymer dielectric layers adoption inert‐atmosphere fabrication process,...

10.1002/adfm.200700046 article EN Advanced Functional Materials 2007-05-22

Semiconducting nanomaterials with 3D network structures exhibit various fascinating properties such as electrical conduction, high permeability, and large surface areas, which are beneficial for adsorption, separation, sensing applications. However, research on these materials is substantially restricted by the limited trans-scalability of their structural design tunability conductivity. To overcome this challenge, a pyrolyzed cellulose nanofiber paper (CNP) semiconductor structure proposed....

10.1021/acsnano.1c10728 article EN cc-by ACS Nano 2022-04-26

An adaptive equaliser for polarisation mode dispersion (PMD) is developed, and its performance evaluated in a 10 Gbit/s transmission system. This suppresses the power penalty due to PMD from 6.9 1.0 dB value up 65.7 ps. result suggests possibility of compensation multigigabit, 10000 km systems.

10.1049/el:19940248 article EN Electronics Letters 1994-02-17

Rapid development of artificial intelligence techniques ignites the emerging demand on accurate perception and understanding optical signals from external environments via brain-like visual systems. Here, enabled by quasi-two-dimensional electron gases (quasi-2DEGs) in InGaO3(ZnO)3 superlattice nanowires (NWs), an system was built to mimic human ones. This is based unreported device concept combining coexistence oxygen adsorption-desorption kinetics NW surface strong carrier...

10.1126/sciadv.abc6389 article EN cc-by-nc Science Advances 2020-11-12

Here we report the thermal management of oxide nanowire sensor in both spatial and time domains by utilizing unique properties nanowires, which are (1) reduced conductivity (2) short relaxation down to several microseconds. Our method utilizes a pulsed self-Joule-heating suspended SnO2 device, enables not only gigantic reduction energy consumption ∼102 pJ/s, but also enhancement sensitivity for electrical sensing NO2 (100 ppb). Furthermore, demonstrate applicability present as sensors on...

10.1021/acssensors.6b00364 article EN ACS Sensors 2016-07-04

Progress toward the concept of "a trillion sensor universe" requires devices to become more abundant, ubiquitous, and be potentially disposable. Here, we report a paper-based disposable molecular device constructed from nanowire based on common zinc oxide (ZnO), wood-derived biodegradable cellulose nanofiber paper substrate, low-cost graphite electrode. The ZnO nanowire/cellulose composite structure is embedded in surface substrate via two-step papermaking process. This provides mechanically...

10.1021/acsami.9b01287 article EN ACS Applied Materials & Interfaces 2019-04-03

While halide perovskite electronics are rapidly developing, they greatly limited by the inferior charge transport and poor stability. In this work, effective surface transfer doping of vapor–liquid–solid (VLS)-grown single-crystalline cesium lead bromide (CsPbBr3) nanowires (NWs) via molybdenum trioxide (MoO3) functionalization is achieved. Once fabricated into NW devices, due to efficient interfacial reduced impurity scattering, a 15× increase in field-effect hole mobility (μh) from 1.5...

10.1021/acsnano.0c03101 article EN ACS Nano 2020-09-10

We demonstrate the facile, rational synthesis of monodispersedly sized zinc oxide (ZnO) nanowires from randomly seeds by hydrothermal growth. Uniformly shaped nanowire tips constructed in ammonia-dominated alkaline conditions serve as a foundation for subsequent formation monodisperse nanowires. By precisely controlling sharp tip and nucleation, our method substantially narrows distribution ZnO diameters σ = 13.5 nm down to 1.3 controls their diameter completely bottom-up method, even...

10.1021/acs.nanolett.9b04367 article EN Nano Letters 2019-12-20

During the past two decades, one–dimensional (1D) metal–oxide nanowire (NW)-based molecular sensors have been witnessed as promising candidates to electrically detect volatile organic compounds (VOCs) due their high surface volume ratio, single crystallinity, and well-defined crystal orientations. Furthermore, these unique physical/chemical features allow integrated sensor electronics work with a long-term stability, ultra-low power consumption, miniature device size, which promote fast...

10.3390/chemosensors9020041 article EN cc-by Chemosensors 2021-02-22

Cubic-SiC (3C-SiC) MOSFET's were successfully fabricated for the first time on a 3C-SiC film heteroepitaxially grown an Si substrate. The device showed acceptable static characteristics. A novel structure was devised, which enabled use of conventional equipment silicon devices, and eliminated dedicated processes stable rigid SiC film.

10.1109/edl.1986.26417 article EN IEEE Electron Device Letters 1986-07-01

Abstract A crystal growth of hydrothermal ZnO nanowires essentially requires a concentration control within so-called “concentration window”, where the anisotropic preferentially occurs. Although understanding what exactly determines width window” is important to tailor process, fundamental knowledge as still scarce. Here we report effect ammonia addition on using conventional nanowire growth. We found that substantially narrows window”. Within narrow range zinc complex concentration,...

10.1038/s41598-019-50641-y article EN cc-by Scientific Reports 2019-10-02

Here, we demonstrate a novel methodology for developing stable quartz crystal microbalance (QCM) gas sensors tightly decorated with self-assembled peptide nanowires as sensitive materials the first time. When employing conventional drop-casting method decorating nanostructures onto QCM electrode surface, observed sensor signals significantly exhibited background noise via unintentional energy dissipations. To overcome this inherent problem of depositing self-assemblies, developed an on-site...

10.1021/acs.nanolett.4c05183 article EN Nano Letters 2025-02-06

Intraocular pressure (IOP), a key factor in glaucoma development, is regulated by aqueous humor (AH) dynamics, with inflow from the ciliary body and outflow through trabecular meshwork (TM). IOP has circadian rhythm entrained sympathetic norepinephrine (NE) superior cervical ganglion. Herein, we investigated its underlying regulatory mechanisms TM. Through comprehensive gene expression analysis of human TM cells mouse eyes, identified 18 genes upregulated NE stimulation, including small...

10.1101/2025.03.21.644679 preprint EN cc-by-nc-nd bioRxiv (Cold Spring Harbor Laboratory) 2025-03-25

The self-heating effects in Bulk/SOI FinFETs have been systematically investigated and compared. It is demonstrated that lattice temperature significantly lower Bulk owing to the larger heat dissipation Si substrate. Heat paths studied device-parameter dependence of thermal characteristics has analyzed. show greater fluctuations resulting from device parameter variations. fluctuation can be greatly suppressed by miniaturizing extension length. shown impact resistance at MOS interface more...

10.1109/iedm.2011.6131672 article EN International Electron Devices Meeting 2011-12-01

We demonstrate the simultaneous 12-core amplification of a double-clad Er/Yb-doped fiber amplifier by using newly developed free-space coupling pump/signal combiner modules equipped with multi-core pigtails. C-band is successfully achieved 5-m long fiber.

10.1049/cp.2013.1469 article EN 2013-01-01

Self-heating effects (SHEs) of bulk and SOI FETs including 6-nm ultra-thin (UT) BOX devices are systematically investigated compared using the four-terminal gate resistance technique. For FETs, it has been verified for first time that SHE is not negligible in nanoscale mainly owing to a decrease thermal conductivity more heavily doped well. Furthermore, demonstrated magnitude strongly depends on chip (ambient) temperature (T <sub xmlns:mml="http://www.w3.org/1998/Math/MathML"...

10.1109/iedm.2013.6724581 article EN 2013-12-01

Metal-oxide nanowires have demonstrated excellent capability in the electrical detection of various molecules based on their material robustness liquid and air environments. Although surface structure essentially determines interaction with adsorbed molecules, understanding correlation between an oxide nanowire molecule is still a major challenge. Herein, we propose rational methodology to obtain this information for low-density metal surfaces by employing infrared p-polarized multiple-angle...

10.1021/acs.nanolett.8b05180 article EN Nano Letters 2019-03-19

Abstract 2D metal phosphide loop‐sheet heterostructures are controllably synthesized by edge‐topological regulation, where Ni 2 P nanosheets edge‐confined the N‐doped carbon loop, containing ultrafine NiFeP nanocrystals (denoted as NiFeP@NC/Ni P). This feature with lifted‐edges prevents stacking of and induces accessible open channels for catalytic site exposure gas bubble release. Importantly, these hybrids exhibit a remarkable oxygen evolution activity an overpotential 223 mV at 20 mA cm...

10.1002/smll.202006860 article EN Small 2021-01-22

Breath odor sensing-based individual authentication was conducted for the first time using an artificial olfactory sensor system. Using a 16-channel chemiresistive array and machine learning, mean accuracy of >97% successfully achieved. The impact number sensors on reproducibility also demonstrated.

10.1039/d1cc06384g article EN Chemical Communications 2022-01-01

Conversion electron Mössbauer spectroscopy has been used to study irradiation effects in the near surface region of type 304 stainless steel after 40 keV helium ion bombardment; a ferromagnetic phase paramagnetic matrix was observed 8×1017 ion/cm2 at 200 °C. The amount found increase with increasing fluence.

10.1063/1.93379 article EN Applied Physics Letters 1982-12-01

Demonstrated is a fan‐out device using small diameter fibres for 7‐core singlemode multicore fibre, which realises compact size with ferrules and split sleeve, also achieves physical contact connection an average loss of 0.17 dB return exceeding 49 dB.

10.1049/el.2013.1262 article EN Electronics Letters 2013-05-01

The self-heating effects (SHEs) of bulk and silicon-on-insulator (SOI) fin-type field-effect transistors (FinFETs) their impacts on circuit performance have been investigated the basis a realistic thermal conductivity silicon. heat dissipation via interconnect wires interface resistance in high-κ gate stack were incorporated simulations. It is shown that depth shallow trench isolation (STI) FinFETs cannot be decreased to less than 100 nm owing increase off-state leakage current. We observed...

10.7567/jjap.52.04cc03 article EN Japanese Journal of Applied Physics 2013-02-20
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