Concerns regarding the health risks associated with employe exposure to volatile chemicals during gasoline refueling necessitates rigorous investigation and effective countermeasures. This study aims evaluate efficacy of vapor recovery systems in mitigating refueling. Employee organic compounds, aldehydes, carbon monoxide, fine particulate matter (PM2.5) was assessed at stations without systems. Three each from State Mexico City, equipped systems, were compared three Guadalajara lacking such...

In this paper, DC characteristics of an AlGaN/GaN on sapphire high‐electron mobility transistor (HEMT) are measured, numerically simulated, and modelled accounting for self‐heating effects (SHEs), with the main electrical parameters being extracted. Decomposing thermal resistance into buffer substrate components, our study can be easily extended to other materials. Thus, is substituted silicon, molybdenum, SiC, which reduce current‐collapse due SHEs thanks their considerably higher...

A DC leakage current model accounting for trapping effects under the gate of AlGaN/GaN HEMTs on silicon has been developed. Based TCAD numerical simulations (with Sentaurus Device), non-local tunneling Schottky is necessary to reproduce measured transfer characteristics in a subthreshold regime. Once trap concentration and distribution are determined device, resulting modeled making use Verilog-A, typical operation regimes.

In this work, new structures based on the PN junction are presented for design of integrated varactors. order to optimize ratio capacitance per unit area (C/A), two varactor geometries have been developed: interdigitated and cross structures. Varactors characterized with a specific measurement methodology. A library varactors that can be used in different RF applications has implemented good quality factors tuning range around 30%.

Abstract This paper is devoted to analyzing varactors based on PN junction cells in order obtain a capacitance model for radiofrequency (RF) applications. A cell the minimum structure that can be considered varactor, including all necessary layers and connections. Then, specific RF integrated circuit obtained overlapping horizontally vertically. Our estimates total from both ports, considering relevant internal contributions. Ten same have been designed fabricated 0.35 µm SiGe technology....

There is an inter-company race among service providers to offer the highest speed connections and services passenger. With some offering up 50Mbps per aircraft global coverage, traditional data links between ground are becoming obsolete.

This article presents a wide range inductance–capacitance voltage controlled oscillator (VCO) with unit cells-based varactor. The cell represents the minimum possible integrated varactor based on p–n junction diodes, where N+ diffusions are central rectangles, surrounded by doughnut shaped P+ diffusions, their respective contacts. varactors designed using AMS 0.35 µm BiCMOS process. A physical model has been derived from measurement of set eight fabricated varactors. Measurements indicate...

In this paper the reliability verification in a measurement system of passive components is presented, measured are integrated varactors. The used for characterization varactors consists HP8719ES Vector Network Analyzer. To calibrate system, short-open-load-through (SOLT) was used. have been designed with structures order to use Cascade ACP40 GSG microprobes. de-embedding process move reference plane from calibration point (probe tips) DUT (Device Under Test). For work, it Four Step De...

El presente artículo tiene como finalidad realizar un análisis al papel que juega el Militar dentro del marco posconflicto colombiano, para ello, se realizará una revisión literaria acerca de los aspectos más relevantes conflicto y armado en Colombia, seguidamente establecerán algunas consecuencias ha generado Colombia las fuerzas militares finalmente discutirá a partir estos hallazgos ve involucrado militar esta etapa proceso. Se pretende breve escenario colombiano abordando su social la...

El presente artículo tiene como finalidad realizar un análisis al papel que juega el Militar dentro del marco posconflicto colombiano, para ello, se realizará una revisión literaria acerca de los aspectos más relevantes conflicto y armado en Colombia, seguidamente establecerán algunas consecuencias ha generado Colombia las fuerzas militares finalmente discutirá a partir estos hallazgos ve involucrado militar esta etapa proceso. Se pretende breve escenario colombiano abordando su social la...

This work analyses the dc response of InGaAs channel modulation-doped field-effect transistors, when varying temperature from 300 to 400 K. An analytical model for intrinsic drain current is derived previous work, carried out a similar AlGaAs device, in order show explicitly dependence. The extrinsic resistances are numerically evaluated and added straightforward form model. Experimental output characteristics at different temperatures an MODFET, static operation, compared with those offered...

In this work, a new comprehensive method to extract the inductor equivalent model parameters is developed. Frequency-dependent expressions for components are obtained from simplification of π-model Y-parameter equations. By analyzing influence value on quality factor and inductance, frequencies at which will be evaluated selected. The has been validated by comparison with measurements inductors fabricated in 0.35 μm process. Results show good agreement over broad-band frequency up 10 GHz.

In this work, varactors based on PN junction cells have been studied in order to obtain a capacitance model for radiofrequency applications. These are unit cells: the minimum structure that can be considered varactor, including all necessary layers and connections. Then, specific integrated circuit (RFIC) is obtained horizontally vertically overlapping cells. Our estimates total from two ports, considering relevant internal contributions. Three same cell designed fabricated 0.35μm SiGe...

In this paper, a wide-band distributed model that can approximate the behaviour of square and octagonal inductors, both with without tapering, is presented. This paper also presents novel way accurately modelling lateral coupling in substrate. The presented be applied to any foundry process, its validity has been demonstrated using technology, D01GH GaN process developed by OMMIC, which high resistivity To do so, seventeen inductors have designed manufactured. proposed verified against EM...

The use of -doping in HFET processes has made the development transistor circuits and logic gates possible, for very high-frequency/speed or low-power applications. This behaviour PHFET device is due to fast quantum well conduction. However, effect operating temperature range critical. depends on circuit activity, packaging technique, external conditions. Temperature strongly affects ability confine current flow into channel. In this paper concentration performance investigated by means...

Integrated varactors are key elements in radio frequency integrated circuits. In this paper, several structures of varactors, based on p-n junction cells, considered. A capacitance model is required to use these a CAD environment. We have developed which considers area and perimeter capacitances adjacent unit cells so as the reverse voltage dependence. Tuning ranges quality factors all well estimated. This applied four their respective fabricated with AMS SiGe 0.35 mum technology. Modeled...

This contribution reports our research in developing an integrated inductor library. From a tutorial perspective the main limitations of this element, when grown on standard silicon technologies, are presented, offering measured results taken from set fabricated inductors and design guidelines to improve their performance. The modeling aspects also covered, we present for different equivalent lumped circuits parameter extraction styles. designer's point view, state characteristics that good...

Driven by the many applications that varactors have in RF integrated blocks, this work analyzes influence of gate geometry (width and length) on accumulation MOS varactors. For purpose, a number been designed fabricated 0.8 μm CMOS standard technology. The most relevant parameters: quality factor, tuning range, capacitance, are simulated compared against measurements. Some design considerations reported.

A model to estimate power consumption in GaAs direct coupled FET logic (DCFL) family, which is based on sensitivity computations, reported. Comparisons against SPICE simulations show errors smaller than 5% estimation, while CPU time reduced by more two orders of magnitude.

In this paper, models for the capacitance of cross integrated varactors based in PN junction are presented. Three different approximations assumed, order to reproduce measured results capacitance. The relative error with is under 10% all cases.

This paper deals with the design and modeling of integrated spiral inductors for RF applications by means a general purpose Electromagnetic (EM) simulator.These tools allow optimizing flexibly inductor layout structure.The performance can be obtained using three-dimensional tool or two-dimensional one.Planar 2-D so called 2.5-Ds simulators are faster accept complex coil geometries.We have used one these simulators, Advanced Design System planar EM simulator, Momentum, from Agilent©.The...