The design of transformers, a key component radio frequency integrated circuits (RFICs), is traditionally carried out through an iterative process involving extensive electromagnetic simulations. While kits (PDKs) offer tools based on interpolation or fitting equations to simplify parameter estimation, these are restricted standard geometries, leaving designers manually simulate and optimize custom designs. This approach inefficient resource intensive. paper proposes automated generate...

This paper presents a physically based model for estimating the substrate losses due to electric field penetration planar spiral inductors on silicon not using patterned ground shield. The model, which does use any fitting parameter, shows excellent agreement with measured data. It has been tested across variety of inductor geometries and two different substrates up 10 GHz

This paper presents a thorough study of radiation effects on frequency synthesizer designed in 0.18 μ m CMOS technology. In devices, the effect high energy particle impact can be modeled by current pulse connected to drain transistors. The SET (single event transient) and SEU upset) were analyzed connecting pulses drains all transistors analyzing amplitude variations phase shifts obtained at output nodes. Following this procedure, most sensitive circuits detected. proposes combination...

This paper focuses on the effect of single event transients AlGaN/GaN sapphire high-electron-mobility-transistors (HEMTs). results in a novel study high performance transistors using substrate. Technology computer aided design tools are used order to perform radiation simulations, once DC response have been reproduced. Results show relationship drain current density with ion energy and angle incidence. The increases as penetrates deeper device due higher energies, while it decreases...

The development of wake-up receivers (WuR) has recently received a lot interest from both academia and industry researchers, primarily because their major impact on the improvement performance wireless sensor networks (WSNs). In this paper, we present three different radiofrequency envelope detection (RFED) based WuRs operating at 868 MHz industrial, scientific medical (ISM) band. These circuits can find application in densely populated WSNs, which are fundamental components...

This article presents the design of a low-power low noise amplifier (LNA) implemented in 45 nm silicon-on-insulator (SOI) technology using gm/ID methodology. The Ka-band LNA achieves very power consumption only 1.98 mW andis first time approach is applied at such high frequency. circuit suitable for applications with central frequency 28 GHz, as intended to operate n257 band defined by 3GPP 5G new radio (NR) specification. proposed cascode uses methodology an RF/MW scenario exploit...

Single event transients (SETs) in analog integrated circuits result from the interaction of a heavy ion or high-energy proton with sensitive p-n junction. SETs induce electron-hole pairs that can lead to current spikes, which propagate through circuit and substantial transient peaks at output voltage. This paper proposes techniques mitigate CMOS voltage controlled oscillators (VCOs) without affecting specifications. A VCO was designed meet IEEE 802.15.4 First, weakest nodes were detected,...

Nowadays, mega-constellations of Low Earth Orbit (LEO) satellites have become increasingly important to provide high-performance Internet access with global coverage. This paper provides an updated comparison four the largest LEO mega-constellations: Telesat, SpaceX, OneWeb and Amazon. It describes gateway design workflow from patch antenna phased array analysis. Patch antennas are developed for both transmission reception after a thorough examination systems. The results electromagnetic...

A 1.4-dB Noise Figure (NF) four-stage K-band Monolithic Microwave Integrated Circuit (MMIC) Low-Noise Amplifier (LNA) in UMS 100 nm GaAs pHEMT technology is presented. The proposed circuit designed to cover the 5G New Release n258 frequency band (24.25-27.58 GHz). Momentum EM post-layout simulations reveal achieves a minimum NF of 1.3 dB, maximum gain 34 |S11| better than -10 dB from 23 GHz 29 GHz, P1dB -18 dBm and an OIP3 24.5 dBm. LNA draws total current 59.1 mA 2 V DC supply results chip...

A comparison between a fully integrated Doherty power amplifier (DPA) and outphasing (OPA) for fifth Generation (5G) wireless communications is presented in this paper. Both amplifiers are using pHEMT transistors from the OMMIC's 100 nm GaN-on-Si technology (D01GH). After theoretical analysis, design layout of both circuits presented. The DPA uses an asymmetric configuration where main biased class AB auxiliary C, while OPA two B. In comparative it has been observed that presents better...

In this paper, a microwave monolithic integrated circuit (MMIC) high-power amplifier (HPA) for Ku-band active radar applications based on gallium nitride silicon (GaN-on-Si) is presented. The design three-stage architecture and was implemented using the D01GH technology provided by OMMIC foundry. Details definition process to maximize delivered power are along with stability thermal analyses. To optimize performance, an asymmetry included at output combiner. Experimental results show that...

This paper presents a low power 2.4 GHz receiver front-end for 2.4-GHz-band IEEE 802.15.4 standard in 0.18 μm CMOS technology. adopts low-IF architecture and comprises variable gain single-ended low-noise amplifier (LNA), quadrature passive mixer, transimpedance (TIA) complex filter image rejection. The achieves 42 dB voltage conversion gain, 10.3 noise figure (NF), 28 dBc rejection -5 dBm input third-order intercept point (IIP3). It only consumes 5.5 mW.

A modified miniature 3D inductor to implement a fully-integrated feedback wide band amplifier in standard SiGe low cost 0.35 μm process is presented. According the measurement results, proposed technique achieves 40% area reduction with minor performance degradation over same circuit implemented conventional inductors. The provides gain from 14 dB 7 between 3.1 GHz 10.6 GHz. In noise figure (NF) varies 2.9 4 dB. © 2010 Wiley Periodicals, Inc. Microwave Opt Technol Lett 52: 1561–1567, 2010;...

In this work, the design and implementation of an open source software hardware system for Internet Things (IoT) applications is presented. This permits remote monitoring supplied data from sensors webcams control different devices such as actuators, servomotors LEDs. The parameters which have been monitored are brightness, temperature relative humidity all constitute possible environmental factors. installation realised through a server managed by administrator. device rules Raspberry Pi,...

The implementation of a 0.38 V K-band low-power fully differential low-noise amplifier (LNA) in 45 nm silicon-on-insulator (SOI) process is presented. proposed architecture employs two-stage approach with transformer-based interstage matching networks to minimize circuit area. LNA covers the frequency range from 20.3 24.1 GHz, it achieves noise figure (NF) as low 2.2 dB, and gain 12.9 power consumption 11.7 mW DC supply very compact area (0.15 mm2) excluding pads. Non-linearity simulations...

In this work, the influence of inductor quality factor in wide band low noise amplifiers has been studied. Electromagnetic simulations have used to model integrated broad response. The on LNA performance inductors that compound impedance matching networks, inductive degeneration and broadband load studied, obtaining design guidelines for optimizing amplifier gain flatness. Using guidelines, an with wideband input matching, shunt-peaking load, output buffer was designed. Austria Mikro Systems...

Wireless sensor network (WSN) applications are under extensive research and development due to the need interconnect devices with each other. To reduce latency while keeping very low power consumption, implementation of a wake-up receiver (WuR) is particular interest. In WuR implementations, meeting high performance metrics design challenge, obtention high-sensitivity, data rate, low-power-consumption WuRs not straightforward procedure. The focus our proposals centered on consumption area...

This paper analyses the effects of single-event transients (SETs) on CMOS low noise amplifiers (LNA) designed for a 0.18 technology. Two well-known topologies, common-source and common-gate cascodes, have been analysed when heavy ions strike most sensitive nodes these structures. In order to simulate strikes both physics-based technology computer aided design (TCAD) tool an electrical circuit domain simulator used. way physics information given by TCAD is combined with fast transient...

Abstract This article describes a RF front end for DVB‐SH (2.17–2.2 GHz) implemented in UMC CMOS 90 nm process. receiver includes low noise amplifier (LNA), single‐to‐differential converter, and mixer. The LNA is based on cascode topology combined with narrow band impedance matching LC tank load. converter generates pair of differential output signals from single input, which have balanced amplitude phase. followed by Gilbert cell quadrature measurements show conversion gain 15.7–15.5 dB, an...

In this work we propose new equivalent circuit models for integrated inductors based on the conventional lumped element model. Automatic tools to assist designers in selecting and automatically laying-out are also reported. Model development is measurements taken from more than 100 spiral designed fabricated a standard silicon process. We demonstrate capacity of proposed accurately predict inductor behavior wider frequency range Our equations coded set that requests desired inductance value...