Jian Cai

ORCID: 0000-0003-3940-6991
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • 3D IC and TSV technologies
  • Electronic Packaging and Soldering Technologies
  • Copper Interconnects and Reliability
  • Thin-Film Transistor Technologies
  • Semiconductor materials and devices
  • Additive Manufacturing and 3D Printing Technologies
  • ZnO doping and properties
  • Advanced Welding Techniques Analysis
  • Electromagnetic Compatibility and Noise Suppression
  • Microwave Engineering and Waveguides
  • Electrodeposition and Electroless Coatings
  • Radio Frequency Integrated Circuit Design
  • Advancements in Semiconductor Devices and Circuit Design
  • Nanowire Synthesis and Applications
  • Advanced MEMS and NEMS Technologies
  • Integrated Circuits and Semiconductor Failure Analysis
  • Semiconductor materials and interfaces
  • Aluminum Alloys Composites Properties
  • GaN-based semiconductor devices and materials
  • Silicon Carbide Semiconductor Technologies
  • Metal and Thin Film Mechanics
  • Acoustic Wave Resonator Technologies
  • Collaboration in agile enterprises
  • Material Properties and Processing
  • Antenna Design and Analysis

Northwestern Polytechnical University
2025

Shenzhen Second People's Hospital
2025

Tsinghua University
2015-2024

National Engineering Research Center for Information Technology in Agriculture
2020-2024

Peking University
2005-2023

South China Normal University
2023

Jiangnan University
2023

Institute of Microelectronics
2011-2020

Fudan University
2017-2019

Chinese Academy of Sciences
2013-2018

Multiband detection has always been a challenge and drawn much attention in the development of photodetectors (PDs). Herein, we present controllable synthesis SnO2 wires with different sizes via chemical vapor deposition formed composites CsPbBr3 particles to realize dual spectral response. We constructed PDs based on single millimeter wire decorated (SnO2 MMW/CsPbBr3), which showed stepped spectrum, fast response speed, self-powered function. Meanwhile, microwires/CsPbBr3 MWs/CsPbBr3) were...

10.1021/acs.jpclett.9b00154 article EN The Journal of Physical Chemistry Letters 2019-02-06

Abstract Transparent ultraviolet (UV) photodetectors are an essential component of next‐generation “see‐through” electronics. However, the current often suffer from relatively slow response speeds and high driving voltages. Here, all‐solution‐processed UV reported that facilely prepared environmentally friendly abundant materials. The composed a titanium dioxide thin film as photosensitive layer sandwiched between two different transparent electrodes to form asymmetric Schottky junctions....

10.1002/adfm.201809013 article EN Advanced Functional Materials 2019-02-12

Abstract Herein, a single‐crystal SnO 2 microwire photodetector (PD) is demonstrated with fast response speed owing to low concentration of point defects. However, the presence surface defects (e.g., oxygen vacancies) still limits its optoelectronic performance. To further improve photoresponse such device, core–shell p–n junction constructed by simply coating new p‐type transparent conductive (CuS) 0.35 :(ZnS) 0.65 nanocomposite film (CuZnS) on n‐type microwire. As result, not only...

10.1002/adom.201800213 article EN Advanced Optical Materials 2018-05-28

The pollution of heavy metals, especially cadmium in wastewater, is a big concern for the environment and humans. In this study, biochar was prepared by pyrolysis bamboo particles after impregnation phosphate (Na2HPO4). biochars before modification were characterized environmental scanning electron microscope (ESEM), Brunet–Emmet–Teller (BET), X-ray diffraction (XRD) analyses. results indicate that surface properties are improved compounds chemically bound to functional groups on surface....

10.1021/acs.energyfuels.7b03159 article EN Energy & Fuels 2017-12-18

In RRAM devices, electrodes play a significant role during the switching process. this paper, different top are used for TaO y /Ta2O5-x /AlO σ triple-oxide-layer devices. Top electrode-induced digital resistive to analog was observed. For Pt electrode (TE) abrupt behavior observed, while Al TE devices showed gradual behavior. Devices with various AlO thicknesses and sizes were fabricated characterized evaluate reliability of switching. The physical mechanisms responsible discussed.

10.1088/0957-4484/27/30/305201 article EN Nanotechnology 2016-06-15

High-performance transparent low-temperature top-gate type aluminum doped zinc oxide (AZO) thin-film transistors (TFTs) ( <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$W/L=100$</tex></formula> or 10 Notation="TeX">$\mu{\rm m}$</tex></formula> ) are successfully fabricated on glass substrate. All the process temperature is below 100 Notation="TeX">$^{\circ}{\rm C}$</tex></formula> . For...

10.1109/ted.2013.2264319 article EN IEEE Transactions on Electron Devices 2013-06-13

Abstract Well‐integration of multiple bioactive components into a biological patch without damaging its cellular matrix structure is crucial for infectious abdominal wall defect repair but remains challenging. Herein, novel asymmetric composite (bPVA/SIS + ‐NP) developed by in situ introducing zwitterionic polyvinyl alcohol molecular brush (bPVA) hydrogel to cationic small intestinal submucosal decellularized (SIS ) via self‐induced phase separation based united strategy. Due high hydrogen...

10.1002/advs.202500865 article EN cc-by Advanced Science 2025-04-07

To promote heat dissipation in power electronics, we investigated the thermal conduction performance of Sn-Bi solder paste between two Cu plates. We measured resistance used as interface material (TIM) by laser flash technique, and a less than 5 mm2 K/W was achieved for TIM. The also showed good reliability terms after cycling, indicating that it can be promising candidate TIM electronics applications. In addition, estimated contact at plate with assistance scanning acoustic microscopy....

10.1115/1.4026616 article EN Journal of Electronic Packaging 2014-01-31

10.1016/j.surfcoat.2012.05.017 article EN Surface and Coatings Technology 2012-05-13

Low-temperature Cu/Sn/Cu solid-state-diffusion (SSD) bonding has been investigated in this paper. Twenty-micrometer fine-pitch bumps with daisy-chain and Kelvin structures were fabricated by high-efficiency low-cost electroplating process. Before bonding, the bump surface was treated Ar(5% H <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> ) plasma. Wafer-level performed a pressure of 6.7 MPa at 200 °C for 60 min. Microstructure as-bonded...

10.1109/tcpmt.2016.2626794 article EN IEEE Transactions on Components Packaging and Manufacturing Technology 2016-12-01

Collaborative engineering design involves various stakeholders with different perspectives. The process is relatively complex and difficult to handle. Various conflicts always happen among the tasks affect team performance. Therefore, represent collaborative capture evolution of perspectives in a structured way, it critical manage improve productivity. This article provides generic model based on sociotechnical framework. has topological format adopts analysis techniques from Petri Nets. By...

10.1017/s089006040115105x article EN Artificial intelligence for engineering design analysis and manufacturing 2001-01-01

Copper nanoparticles (Cu NPs) fabricated by physical vapor deposition (PVD) were introduced in Cu-Cu bonding as surface modification. The structure with Ti adhesive/barrier layer and Cu substrate was on both surfaces first. Loose NPs then deposited magnetron sputtering a high pressure environment. Solid state process accomplished at 200°C for 3min under the of 20MPa. Die shear test carried out an average strength 36.75MPa achieved. analysis fracture revealed high-reliability structure....

10.1063/1.4978490 article EN cc-by AIP Advances 2017-03-01
Coming Soon ...