A5060410158- Advanced Surface Polishing Techniques
- Semiconductor materials and devices
- Metal and Thin Film Mechanics
- Integrated Circuits and Semiconductor Failure Analysis
- Glass properties and applications
- Ferroelectric and Negative Capacitance Devices
- Diamond and Carbon-based Materials Research
- Advanced machining processes and optimization
- Phase-change materials and chalcogenides
- Advancements in Semiconductor Devices and Circuit Design
- Advanced Machining and Optimization Techniques
- Surface Modification and Superhydrophobicity
- Metallic Glasses and Amorphous Alloys
- Silicone and Siloxane Chemistry
- GaN-based semiconductor devices and materials
- Silicon Carbide Semiconductor Technologies
- Liquid Crystal Research Advancements
- Aerogels and thermal insulation
- Force Microscopy Techniques and Applications
Shanghai Institute of Microsystem and Information Technology
2018-2022
Chinese Academy of Sciences
2018-2022
University of Chinese Academy of Sciences
2018-2022
Abstract With the development of integrated circuit technology, especially after entering sub-micron process, reduction critical dimensions and realization high-density devices, flatness between material layers is becoming more critical. Because conventional mechanical polishing methods inevitably produce scratches same size as device in metal or even dielectric layers, resulting depth field focus problems lithography. The first planarization technique to achieve application spin on glass...
This study investigated the effects of particle size and pH SiO 2 -based slurry on chemical mechanical polishing for film. It was found that removal rates surface roughness material highly dependent pH. As varied, main mechanism reasoned to provide activation energy erasure. In addition, affected Zeta potential, which had an important effect strength action polishing. The change in greatly influenced rate. According experimental results, best film achieved with 40 nm abrasives when 4.
In this paper, we have successfully fabricated the junction-less GAA VCT combined with a hexagonal capacitor to realize compact 4F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> DRAM architecture. It shows breakthroughs of I <inf xmlns:xlink="http://www.w3.org/1999/xlink">on</inf> /I xmlns:xlink="http://www.w3.org/1999/xlink">off</inf> >10 xmlns:xlink="http://www.w3.org/1999/xlink">9</sup> and SS=62.5 mV/dec. We also elaborated on...
Cobalt, the 3rd generation material for interconnect in deep nanometers' processing. Cobalt reduces structure and process complexity compared to dual damascene process. In this article, we investigate effects of complexing agent L-Aspartic acid (L-Asp) oxidant H2O2 polishing based on chemical mechanical (CMP). The results show that water-soluble Co(III)-L-Asp complex generated by adding L-Asp is beneficial improve removal rate. Electrochemical measurements X-ray photoelectron spectroscopy...
In this work, a novel 4F <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> VCT (vertical channel transistor) targeting for next generation of DRAM is proposed. We approached process feasibility and device performance $\mathbf{4 F}^{2}$ by TCAD simulation. Detailed processes such as BL (bit line) WL (word loop have also been discussed to achieve lx node DRAM. For the first time, silicon demonstration $8\mathrm{~Gb}$ full array with density...
In this study, we investigate the chemical mechanical planarization (CMP), static dissolution and electrochemical performace of amorphous carbon-doped Ge2Sb2Te5 (GSTC) film in alkaline slurry with H2O2 employed as an oxidizer. It was found that material removal rate (MRR) GSTC first increase then slowly decrease concentration H2O2. The surface quality post-CMP shows same trend. To understand mechanism CMP H2O2, Energy Dispersive Spectrometer on post-CMP, Inductively Coupled Plasma solution...
During the industrial application of new phase change memory material carbon-doped Ge2Sb2Te5 (GSTC), it is necessary to perform planarization for confined cell structure through chemical mechanical polishing (CMP) process. The goal CMP acquire a high removal rate and selectivity while ensuring that polished surface free scratches corrosion pits. A acidic slurry added with potassium persulfate (OXONE) as an oxidizer was developed. 5000 ppm OXONE has amorphous GSTC film 5200 Å min−1, between...
As a third-generation semiconductor material, silicon carbide has excellent electron mobility and band gap, which makes it shine in power optoelectronics applications. 4H-SiC the highest gap of all crystal type SiC; chemical mechanical polishing technology is only effective global planarization process today. In this paper, we studied rate surface carbon based on processing. The structure resulting material layer was by TEM, difference between explained.
During the preparation of phase change memory, deposition and chemical mechanical polishing (CMP) titanium nitride (TiN) are indispensable. A new acidic slurry added with sodium hypochlorite (NaClO) as an oxidizer is developed for CMP TiN film. It has achieved a material removal rate 76 nm/min, high selectivity between film silica (SiO 2 ) films 128:1, tungsten 84:1 surface quality. To understand mechanism process, x-ray photoelectron (XPS) spectroscope potentiodynamic polarization...
Titanium nitride (TiN) is preferred for use as the bottom electrode contact due to its excellent thermal stability and suitable electrical conductivity. We have studied effect of using potassium permanganate (KMnO4), L-Aspartic Acid (L-Asp) alumina abrasives slurry in chemical mechanical polishing (CMP) TiN film. Different concentrations different L-aspartic acid additives were applied CMP TiN. The results show that KMnO4 L-Asp can increase removal rate improve surface smoothness mechanism...
As the technology node reaches 10 nm and below, cobalt has great potential as a barrier layer for copper interconnects even new generation of interconnect materials. In this paper, effect double complexation L-Aspartic Acid (L-Asp) glutathione (GSH) on chemical mechanical polishing (CMP) is investigated in H 2 O based alkaline slurry. The results reveal that L-Asp GSH can respectively complex ions to form water-soluble complexes removal rate increased more than ten times 2500 Å min −1 ....