A5101750114- Vacuum and Plasma Arcs
- Electrical Fault Detection and Protection
- Electrical Contact Performance and Analysis
- Advanced Thermoelectric Materials and Devices
- Semiconductor materials and devices
- Plasma Diagnostics and Applications
- Welding Techniques and Residual Stresses
- High voltage insulation and dielectric phenomena
- Plasma Applications and Diagnostics
- Diamond and Carbon-based Materials Research
- Thermal properties of materials
- Metal and Thin Film Mechanics
- HVDC Systems and Fault Protection
- High-Voltage Power Transmission Systems
- Silicon Carbide Semiconductor Technologies
- Simulation and Modeling Applications
- Semiconductor materials and interfaces
- Aerosol Filtration and Electrostatic Precipitation
- Copper Interconnects and Reliability
- Adhesion, Friction, and Surface Interactions
- Magnetic Bearings and Levitation Dynamics
- Electrostatic Discharge in Electronics
- Thermal Radiation and Cooling Technologies
- Advanced Sensor and Energy Harvesting Materials
- Electromagnetic Launch and Propulsion Technology
Xi'an Jiaotong University
2016-2025
State Key Laboratory of Electrical Insulation and Power Equipment
2009-2025
University of Sheffield
2024
Tobacco Research Institute
2024
China Tobacco
2024
Kanazawa University
2022
Korea Electric Power Corporation (South Korea)
2022
Vitzro Tech (South Korea)
2022
GlobalFoundries (Germany)
2018
GlobalFoundries (United States)
2016-2018
We present a 7nm technology with the tightest contacted poly pitch (CPP) of 44/48nm and metallization 36nm ever reported in FinFET technology. To overcome optical lithography limits, Extreme Ultraviolet Lithography (EUV) has been introduced for multiple critical levels first time. Dual strained channels have also implemented to enhance mobility high performance applications.
As one of the most important electrical components, low-voltage circuit breaker (LVCB) has been widely used for protection in all types distribution systems. In particular, dc arousing great research interest recent years. this type breaker, an air arc is formed interrupting process which a 3D transient complex chamber geometry with splitter plates. Controlling evolution and extinction are significant problems. This paper reviews published works referring to LVCB arcs. Based on working...
In this paper, the complicated arc phenomena in air dc circuit breakers that are widely used rail transit and vessels investigated with both experimental numerical approaches. Initially, basic motion characteristics switch presented by recorded waveforms images carefully designed breaking experiments. Phenomena of stagnation back commutation revealed influence chamber width on is preliminarily discussed according to results. Then, make nature clear determine details characteristics, a...
Middle-of-the-line (MOL) interconnect and contact resistances represent significant impacts to high-end IC performance at ≤ 10 nm nodes. CVD W-based metallization has been used for all nodes since the inception of damascene. However, it is now being severely challenged due limited scaling traditional PVD Ti/CVD TiN barrier ALD nucleation layers. This study reports use alternate barriers, along with metal-to-metal interface cleans, reduce resistance MOL metallization. As well, we report first...
Abstract Thermoelectric (TE) performance of polycrystalline stannous selenide (SnSe) has been remarkably promoted by the strategies energy band, defect engineering, etc. However, due to intrinsic insufficiencies phonon scattering and carrier concentration, it is hard simultaneously realize regulations electrical thermal transport properties one simple approach. Herein, we develop Cu Ce co-doping strategy that can not only greatly reduce lattice conductivity but also improve properties. In...
The cold-cathode plasma discharge switch is a switching device capable of conducting and interrupting currents. It has the potential to replace fully controllable power semiconductor devices in field direct current transmission. primarily consists four electrodes: anode, control grid, source cathode. By applying voltage magnetized generated. Applying positive grid facilitates charged particle motion, forming stable conduction path from anode Conversely, negative creates sheath within grid's...
Abstract C5F10O-CO2 mixture has a great potential to replace SF6 in gas-insulated equipment. However, can decompose series of products corona discharge, weakening the insulation performance The formation mechanism decomposition help identify defects. This paper establishes chemical kinetic model obtain variation regulation ac point-plane discharge for with C5F10O content be 5%, 10% and 15%. is composed plasma region gas region, two regions are interacted by diffusion process. contains 78...
Abstract This paper is devoted to the computation of non-equilibrium composition an SF 6 plasma, and determination dominant particles reactions, at conditions relevant high-voltage circuit breakers after current zero (temperatures from 12 000 K 1000 a pressure 4 atm). The characterized by departures both thermal chemical equilibrium. In process, electron temperature ( T e ) not equal heavy-particle h ), while for non-equilibrium, kinetic model adopted. order evaluate reasonableness...
We achieved mid-10 <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-10</sup> Ω-cm xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> n-type S/D contact resistivity (npc) and 1.9×10 xmlns:xlink="http://www.w3.org/1999/xlink">-9</sup> p-type (ppc) by employing laser-induced liquid or solid phase epitaxy (LPE/SPE) of Si:P Ge:Group-III-Metal metastable alloys inside nano-scale trenches. The Ge: Group-III-Metal alloy allows for a metal-Ge Fermi level...
Alternate metallization schemes for copper interconnect using selective CVD Co capping at the 22nm technology node are investigated. Control splits fabricated with PVD Ta(N) barrier/liner layers and CuMn alloy seedlayers compared against interconnects a TaN barrier/CVD liner scheme capping. Secondary ion mass spectroscopy (SIMS) studies of structures indicates that top-surface segregation Mn-dopant in is suppressed presence Liner. metal form evaluated combination liners. Good electrical...
This paper focuses on the numerical investigation of arc plasma behavior during commutation process in a medium-voltage direct current circuit breaker (DCCB) contact system. A three-dimensional magneto-hydrodynamic (MHD) model air system DCCB is developed, based commercial software FLUENT. Coupled electromagnetic and gas dynamic interactions are considered as usual, thin layer nonlinear electrical resistance elements used to represent voltage drop sheath formation new root. The distributions...
The splashing erosion of electrodes in a DC atmospheric-pressure air arc has been investigated by visualization the electrode surface and sputtered droplets, tracking droplet trajectories, using image processing techniques. A particle velocimetry algorithm introduced to measure sputtering velocity distribution. Erosion both tungsten–copper tungsten–ceria is studied; cases found be dominated rather than metal evaporation. directly influenced melting formation plasma jets, can reduced tuning...
This work thoroughly investigates the external parasitic resistance in advanced FinFET technology. The optimization of is systematically examined terms 1) source/drain epi resistance, 2) contact and 3) middle line metal stud resistance. Various reduction knobs have been experimentally explored these three aspects low resistivity <tex xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">$1\times 10^{-9}$</tex>...
This paper is devoted to the calculation of fundamental properties CO2 mixed with C2F4. The species composition and thermodynamic (mass density, entropy, enthalpy specific heat at constant pressure) are based on Gibbs free energy minimization. transport (electrical conductivity, viscosity thermal conductivity) calculated by well-known Chapman-Enskog method. Lennard-Jones like phenomenological potential some recently updated cross sections adopted obtain collision integrals. developed in...
We discuss the transition to Ti based silicides for source-drain (SD) contacts 3D FinFET devices starting from 14nm node & beyond. Reductions in n-FET p-FET contact resistances are reported with optimization of metallization process dopant concentrations. The SiGe epitaxy and addition a thin interfacial NiPt(10%) found significantly improve performance.
Fault current limitation is an urgent but challenging technology for medium-voltage dc (MVDC) power systems. For a liquid metal limiter (LMCL), the arc discharge characteristics often determine its current-limiting properties. The evolving in measured by contacting voltage probes, and properties of formed dumbbell-like column are studied discussed detail. It indicates that total almost behaves as linear function LMCL. Besides, simplified numerical model based on magnetohydrodynamics theory...