A5079919266- Silicon Nanostructures and Photoluminescence
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Magnetic Properties and Synthesis of Ferrites
- Semiconductor materials and devices
- Magnetic properties of thin films
- Thin-Film Transistor Technologies
- Magnetic Properties and Applications
- Silicon and Solar Cell Technologies
- Iron oxide chemistry and applications
- Anodic Oxide Films and Nanostructures
- Magneto-Optical Properties and Applications
- Surface and Thin Film Phenomena
- Gas Sensing Nanomaterials and Sensors
- Multiferroics and related materials
- Advanced Surface Polishing Techniques
- Advanced Semiconductor Detectors and Materials
- Transition Metal Oxide Nanomaterials
- Minerals Flotation and Separation Techniques
- Chalcogenide Semiconductor Thin Films
- Advanced biosensing and bioanalysis techniques
- Analytical Chemistry and Sensors
- Cultural Heritage Materials Analysis
Institute of Automation and Control Processes
2007-2018
Russian Academy of Sciences
2007-2018
Far Eastern Federal University
2012-2018
Far Eastern Branch of the Russian Academy of Sciences
2015-2016
Sungkyunkwan University
2009
Taras Shevchenko National University of Kyiv
1995-2005
This paper considers a theoretical model of the metal-tunnel interface layer-thin porous silicon-p-Si structure. A diffusion-drift equation at appropriate boundary conditions is solved to clarify mechanism carriers' transport. The voltage drop distribution along structure calculated by solving equations under condition continuity vector electrostatic induction. obtained analytical expressions allow one analyse contribution layer, silicon and surface electron states electrical behaviour Some...
Electrical properties of two kinds sandwich structures (SnO2:F/por-TiO2/Ti and Si/por-TiO2/Pd) are investigated by the methods I–V, C–V characteristics DLTS in vapors water alcohol. It has been demonstrated that besides change conductivity capacitance por-TiO2 layers one can also use for gas sensing high frequency MOS type structure, measurement current response at relatively low frequencies modification charge transfer between Si bulk states near por-TiO2/Si interface.
The feasibility of the improvement crystalline Si solar cells is considered by employing a thick porous (PS) layer. influence re-emission, absorption and reflectivity PS on photocurrent cell are studied using numerical simulations experimental verification. measurement additional caused re-emission shown to allow evaluate external quantum efficiency photoluminescence which can achieve approximately 4-5% n-Si. In this case effect short circuit current commercial reaches up few percent for...
Polycrystalline films of magnetite (Fe 3 O 4 ) with thickness 75 nm were grown on SiO 2 /Si (001) surface by reactive deposition Fe in atmosphere. The growth was conducted the different oxygen pressures. structure monitored reflection high-energy electron diffraction (RHEED) during film growth. It found that there is a range pressure which only textured takes place. Reactive at lower results without texture. In contrast higher texture remains but appearance hematite (α-Fe observed.
The investigation of the codeposition process iron and silicon (at a ratio 1:2) on SiO2/Si(001) surface was carried out at various substrate temperatures. A thin dioxide layer (∼1 nm) formed Si(001) by wet chemical treatment. It found that room temperature results in growth continuous disordered film. Codeposition 470°C initiates interaction Fe Si atoms with each other formation β-FeSi2 polycrystalline At an increase interact SiO2 layer. So, 650°C some part deposited is consumed voids defect...
We report on the results of study lateral photovoltaic effect in Fe/SiO 2 /Si structures with n-and p-type silicon. It is found that both cases photovoltage signal varies linearly when light spot moves between electrodes. established sensitivity /n-Si and /р-Si 32.3 14.7 mV/mm, respectively. When silicon conductivity type changes, there an inversion polarity as a result opposite direction built-in electrical field at SiO interface. was response time structure 4.2 times faster than /p-Si due...
AbstractThe results of a comparative study the lateral photovoltaic effect in Fe_3O_4/SiO_2/ n -Si and p structures are presented. The photovoltage reaches its maximum near measurement contacts both structures, but signs this voltage differ. As light spot moves away from contacts, varies linearly decreases exponentially -Si. It is found that interface states at SiO_2/Si induce polarity inversion associated with change conductivity type silicon. An extreme thickness dependence an optimum...
We report on the results of study lateral photovoltaic effect in Fe 3 O 4 /SiO 2 /p-Si structure. It is found that maximum photovoltage localized near measuring contacts and rapidly attenuates when light spot moves away from them. Correspondence sign to conductivity type silicon substrate achieved only taking into account interface states at SiO interface. The extreme dependence thickness film observed, which due fact barrier height laterally inhomogeneous small thicknesses magnetite film,...