Enlong Li

ORCID: 0009-0002-1563-4922
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About
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Research Areas
  • Advanced Memory and Neural Computing
  • Conducting polymers and applications
  • Ferroelectric and Negative Capacitance Devices
  • Advanced Sensor and Energy Harvesting Materials
  • Perovskite Materials and Applications
  • Neuroscience and Neural Engineering
  • Neural Networks and Reservoir Computing
  • Photoreceptor and optogenetics research
  • 2D Materials and Applications
  • Tactile and Sensory Interactions
  • Organic Electronics and Photovoltaics
  • MXene and MAX Phase Materials
  • Graphene research and applications
  • Analytical Chemistry and Sensors
  • Nanowire Synthesis and Applications
  • Digital Marketing and Social Media
  • Impact of Light on Environment and Health
  • Supercapacitor Materials and Fabrication
  • Human Mobility and Location-Based Analysis
  • Technology Adoption and User Behaviour
  • Vestibular and auditory disorders
  • Advanced Materials and Mechanics
  • Energy Efficient Wireless Sensor Networks
  • Neural dynamics and brain function
  • Software-Defined Networks and 5G

Fudan University
2024-2025

Fuzhou University
2018-2024

Tan Kah Kee Innovation Laboratory
2020-2024

Guilin Tourism University
2024

City University of Macau
2023

Lanzhou University
2021

University of Jinan
2021

Devices with sensing-memory-computing capability for the detection, recognition and memorization of real time sensory information could simplify data conversion, transmission, storage, operations between different blocks in conventional chips, which are invaluable sought-after to offer critical benefits accomplishing diverse functions, simple design, efficient computing simultaneously internet things (IOT) era. Here, we develop a self-powered vertical tribo-transistor (VTT) based on MXenes...

10.1038/s41467-022-35628-0 article EN cc-by Nature Communications 2022-12-23

Vertical transistors have attracted enormous attention in the next-generation electronic devices due to their high working frequency, low operation voltage and large current density, while a major scientific technological challenge for performance vertical transistor is find suitable source electrode. Herein, an MXene material, Ti3C2Tx, introduced as electrode of organic transistors. The porous films take advantage both partially shielding effect graphene direct modulation Schottky barrier...

10.1038/s41467-022-30527-w article EN cc-by Nature Communications 2022-05-24

Light-stimulated optoelectronic synaptic devices are fundamental compositions of the neuromorphic vision system. However, there still huge challenges to achieving both bidirectional behaviors under light stimuli and high performance. Herein, a bilayer 2D molecular crystal (2DMC) p-n heterojunction is developed achieve high-performance behaviors. The 2DMC heterojunction-based field effect transistor (FET) exhibit typical ambipolar properties remarkable responsivity (R) 3.58×104 A W-1 weak as...

10.1002/adma.202301468 article EN Advanced Materials 2023-04-04

Abstract Ferroelectric semiconductors have the advantages of switchable polarization ferroelectric field regulation and semiconductor transport characteristics, which are highly promising in transistors nonvolatile memory. However, it is difficult to prepare a Sn-based perovskite film with both robust properties. Here, by doping 2-methylbenzimidazole, [93.3 mol% (FA 0.86 Cs 0.14 )SnI 3 6.7 PEA 2 SnI 4 ] films transformed into films, owing molecular reconfiguration. The reconfigured exhibit...

10.1038/s41467-024-55113-0 article EN cc-by Nature Communications 2025-01-03

Achieving high mobility while minimizing off-current and static power consumption is critical for applications of two-dimensional field-effect transistors. Herein, a selenium (Se) sacrificial layer introduced between the rhenium sulfide (ReS

10.1021/acs.nanolett.4c04467 article EN Nano Letters 2025-01-06

Neuromorphic computing inspired by the neural systems in human brain will overcome issue of independent information processing and storage. An artificial synaptic device as a basic unit neuromorphic system can perform signal with low power consumption, exploring different types transistors is essential to provide suitable devices for intelligence. Hence, first time, an electret-based transistor (EST) presented, which successfully shows behaviors including excitatory/inhibitory postsynaptic...

10.1021/acsami.9b22925 article EN ACS Applied Materials & Interfaces 2020-03-10

Neuromorphic computation, which emulates the signal process of human brain, is considered to be a feasible way for future computation. Realization dynamic modulation synaptic plasticity and accelerated learning, could improve processing capacity learning ability artificial devices, further energy efficiency neuromorphic Nevertheless, realization regulation weight without an external regular terminal method that endow devices with modulate speed have rarely been reported. Furthermore, finding...

10.1021/acsami.9b17227 article EN ACS Applied Materials & Interfaces 2019-11-14

Abstract Two‐dimensional (2D) van der Waals heterostructure (vdWH)‐based floating gate devices show great potential for next‐generation nonvolatile and multilevel data storage memory. However, high program voltage induced substantial energy consumption, which is one of the primary concerns, hinders their applications in low‐energy‐consumption artificial synapses neuromorphic computing. In this study, we demonstrate a three‐terminal device based on vdWH tin disulfide (SnS 2 ), hexagonal boron...

10.1002/inf2.12230 article EN cc-by InfoMat 2021-07-13

Abstract The “Internet‐of‐Things”‐based information society requires the devices to possess high scaling capability as well rich functionalities. Hybrid systems coupling 2D semiconductors and functional ferroelectrics are attracting increasing attention complementary existing silicon due their outstanding electronic optoelectronic performances. In this work, interfacial states introduced on ferroelectric Hf 0.5 Zr O 2 thin film during annealing process. Utilizing synergetic effect of...

10.1002/adfm.202110415 article EN Advanced Functional Materials 2022-01-14

Organic field-effect transistors with parallel transmission and learning functions are of interest in the development brain-inspired neuromorphic computing. However, poor performance high power consumption two main issues limiting their practical applications. Herein, an ultralow-power vertical transistor is demonstrated based on transition-metal carbides/nitrides (MXene) organic single crystal. The exhibits a JON 16.6 mA cm-2 /JOFF ratio 9.12 × 105 under ultralow working voltage -1 mV....

10.1002/adma.202208600 article EN Advanced Materials 2022-11-07

Abstract Organic photoelectric neuromorphic devices that mimic the brain are widely explored for advanced perceptual computing. However, current individual synaptic mainly focus on utilizing linear models to process optoelectronic signals, which means there is a lack of effective response nonlinear structural information from real world, severely limiting computational efficiency and adaptability networks static dynamic information. Here, feedforward photoadaptive organic transistor with...

10.1002/adfm.202313217 article EN Advanced Functional Materials 2024-01-23

Organic electrochemical transistors (OECTs) have attracted considerable interests for various applications ranging from biosensors to digital logic circuits and artificial synapses. However, the majority of reported OECTs utilize large channel length up several or tens micrometers, which limits device performance leads low transistor densities. Here, we demonstrate a new design vertical OECT architecture with nanoscale down ∼100 nm. The devices exhibit high on-state current over 20 mA under...

10.1021/acsami.0c15553 article EN ACS Applied Materials & Interfaces 2020-10-21

Two-dimensional (2D) materials based artificial synapses are important building blocks for the brain-inspired computing systems that promising in handling large amounts of informational data with high energy-efficiency future. However, 2D devices usually rely on deposited or transferred insulators as dielectric layer, resulting various challenges device compatibility and fabrication complexity. Here, we demonstrate a controllable reliable oxidation process to turn semiconductor HfS2 into...

10.1021/acsami.0c22561 article EN ACS Applied Materials & Interfaces 2021-02-19

Organic field-effect transistor (OFET) memory has received widespread attention due to its easy integration, precise charge modulation, and multi-level memory. However, the performance of organic still needs be improved for practical application, reported technologies are strongly dependent on an additional charge-trapping layer, which increases complexity device. Here, we report a heterostructured vertical transistor, uses p/n semiconductor bulk heterojunction as layer without using any...

10.1021/acsphotonics.1c01167 article EN ACS Photonics 2021-10-06

In recent years, much attention has been focused on two-dimensional (2D) material-based synaptic transistor devices because of their inherent advantages low dimension, simultaneous read–write operation and high efficiency. However, process compatibility repeatability these materials are still a big challenge, as well other issues such complex transfer material selectivity. this work, transistors with an ultrathin organic semiconductor layer (down to 7 nm) were obtained by the simple...

10.1021/acsami.0c22271 article EN ACS Applied Materials & Interfaces 2021-02-10
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