A5033490050- Magnetic properties of thin films
- Advanced Memory and Neural Computing
- Ferroelectric and Negative Capacitance Devices
- Electronic and Structural Properties of Oxides
- Physics of Superconductivity and Magnetism
- Magnetic and transport properties of perovskites and related materials
- Topological Materials and Phenomena
- 2D Materials and Applications
- Explainable Artificial Intelligence (XAI)
- Semiconductor materials and interfaces
- ZnO doping and properties
- Advanced Neural Network Applications
- Iron-based superconductors research
- Quantum and electron transport phenomena
- Surface and Thin Film Phenomena
- Adversarial Robustness in Machine Learning
Northwestern University
2020-2024
Vrije Universiteit Amsterdam
2024
State Key Laboratory of Surface Physics
2018
Fudan University
2018
Current-induced spin-orbit torques (SOTs) are of interest for fast and energy-efficient manipulation magnetic order in spintronic devices. To be deterministic, however, switching perpendicularly magnetized materials by SOT requires a mechanism in-plane symmetry breaking. Existing methods to do so involve the application an bias field, or incorporation structural asymmetry device, both which can difficult implement practical applications. Here, we report bias-field-free single perpendicular...
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, bit density. Realizing this potential requires AFM simultaneous electrical writing reading of information, which also compatible established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial tunnel junctions. However, these TMR structures not grown using silicon-compatible deposition process,...
Abstract There is accelerating interest in developing memory devices using antiferromagnetic (AFM) materials, motivated by the possibility for electrically controlling AFM order via spin-orbit torques, and its read-out magnetoresistive effects. Recent studies have shown, however, that high current densities create non-magnetic contributions to resistive switching signals AFM/heavy metal (AFM/HM) bilayers, complicating their interpretation. Here we introduce an experimental protocol...
Quantum Griffiths singularity was theoretically proposed to interpret the phenomenon of divergent dynamical exponent in quantum phase transitions. It has been discovered experimentally three-dimensional (3D) magnetic metal systems and two-dimensional (2D) superconductors. But, whether this state exists lower dimensional remains elusive. Here, we report signature quasi-one-dimensional (1D) Ta2PdS5 nanowires. The superconducting critical field shows a strong anisotropic behavior violation...
Context. While models like BERT and GPT are powerful, they require substantial resources. Knowledge distillation can be employed as a technique to enhance their efficiency. Yet, we lack clear understanding on performance energy consumption. This uncertainty is major concern, especially in practical applications, where these could strain resources limit accessibility for developers with limited means. Our drive also comes from the pressing need environmentally-friendly sustainable...
Antiferromagnetic (AFM) materials are a pathway to spintronic memory and computing devices with unprecedented speed, energy efficiency, bit density. Realizing this potential requires AFM simultaneous electrical writing reading of information, which also compatible established silicon-based manufacturing. Recent experiments have shown tunneling magnetoresistance (TMR) readout in epitaxial tunnel junctions. However, these TMR structures were not grown using silicon-compatible deposition...
In this work, we investigate the current-induced switching in micrometer-scale circular memory bits based on metallic antiferromagnet PtMn, which is already widely used as part of pinned layer in-plane magnetic tunnel junctions manufactured CMOS. The device shows reversible response to currents applied Pt layer, with opposite current polarities achieving directions PtMn. density ~2 MA/cm2. We show that process essentially unaffected by external fields up 16 T, and robust over a wide...