The linearity of a gate-all-around junctionless silicon nanowire (SiNW) FET has been analyzed. SiNW shows perfectly linear <formula formulatype="inline" xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex Notation="TeX">$I_{D}$</tex></formula> – Notation="TeX">$V_{G}$</tex></formula> relation and nearly zero output conductance. mechanism its behaviors due to degenerate doping level also demonstrated. For RF applications, the proposed exhibits much...

This paper reports on an aluminum nitride (AlN) piezoelectric micromachined ultrasound transducer (PMUT) array for photoacoustic (PA) imaging, where the high-order resonance modes of PMUT are utilized to improve imaging resolution. A flexural vibration mode (FVM) is fabricated and applied in a (PAI) system. Specifically, microelectromechanical system (MEMS)-based suitable PA endoscopic blood vessels bronchi due its miniature size high sensitivity. More importantly, AlN nontoxic material,...

Abstract In robotic‐assisted minimally invasive surgery (RMIS), non‐sentient surgical instruments make it impossible for surgeons to perceive operational force during the procedure. To facilitate with telepresence surgery, a highly integrated MEMS‐based piezoresistive 3D sensing module, which is composed of sensor chip, an encapsulation cap miniature pyramids, and top elastic layer, demonstrated. This innovative combined construction allows rapid replacement layers different thicknesses...

Transit-time ultrasonic flowmeters (TTUFs) are among the most widely used devices for flow measurements. However, traditional TTUFs usually based on a bulk piezoelectric transducer, which limits their application in small-diameter channels. In this paper, we developed miniaturized TTUF scandium-doped aluminum nitride (ScAlN) micromachined transducers (PMUTs). The proposed contains two PMUT-based transceivers and π-type channel. PMUTs contain 13 × square cells with dimensions of 2.8 mm2. To...

A pressure sensor with a 200 µm diaphragm using silicon nanowires (SiNWs) as piezoresistive sensing element is developed and optimized. The SiNWs are embedded in multilayered structure comprising nitride (SiNx) oxide (SiO2). Optimizations were performed on both the structure. 1.2 SiNx layer considered to be an optimized design terms of small initial central deflection (0.1 µm), relatively high sensitivity (0.6% psi−1) good linearity within our measurement range.

The safety issue of robot becomes a key challenge in modern manufacturing industry, especially the scenario frequent human-robot collaboration. This paper presents flexible ultrasonic proximity sensing skin which can be integrated on surface arm to ensure safe is composed three pieces aluminum nitride based piezoelectric micromachined transducers (PMUTs) arrays at resonance frequency 115 kHz and chip size 4 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML"...

This article reports an aluminum nitride(AlN) piezoelectric micromachined ultrasound transducer (PMUT) array enabling dual imaging modality of photoacoustic (PA) and (US) endoscopy. AlN is a kind non-toxic material, making it suitable for biomedical, especially implantable applications. In clinical endoscopic imaging, pulse-echo US signal can distinguish soft tissues' mechanical properties easily, while PA more sensitive to optical absorption property. Both signals be received by fabricated...

To date, nearly all the reported Lamb wave resonators (LWRs) are straight crested LWRs, which suffer from inherent spurious modes and low quality factors (Q). For first time, this work demonstrates a circular LWR. Its advantages over LWR presented comprehensively by studying their fundamental symmetric (S0) mode, is simplest most representative mode. Utilizing waves, proposed resonator avoids only utilizing waves propagating in lateral direction thus eliminating transverse as no exists....

A dual-silicon-nanowires based U-shape nanoelectromechanical switch with low pull-in voltage is fabricated using standard complementary metal-oxide-semiconductor compatible process on silicon-on-insulator wafer. The consists of a capacitive paddle dimension 2 μm by 4 supported two silicon nanowires, suspended top the substrate gap 145 nm. nanowires are 5 long cross-section 90 nm average about 1.12 V and ratio ON/OFF current measured to be over 10 000. According preliminary results, this...

We present nanoelectromechanical system based cantilever air flow sensor using silicon nanowires (SiNWs). The is fabricated in the complementary metal-oxide-semiconductor compatible process with dimension of 90 μm × 20 3 μm. SiNWs size 2 nm (length width height) are embedded at edge fixed end to experience maximum induced strain. Compared recently reported sensors, our device shows a better sensitivity 198 Ω/m/s and sensing range up 65 m/s. In addition, improvements terms linearity,...

We present a nanoelectromechanical system piezoresistive pressure sensor with annular grooves on the circular diaphragm where silicon nanowires (SiNWs) are embedded as sensing elements around edge. In comparison our previous flat sensor, this new structure enhances device sensitivity by 2.5 times under range of 0-120 mmHg. By leveraging SiNWs piezoresistors, improvement is even remarkable in contrast to other recently reported devices. addition, miniaturized (radius 100 μm) can be...

In this article, we investigate the effects of dc bias voltage on characteristics for Aluminum Nitride (AlN)-based piezoelectric micromachined ultrasonic transducers (PMUTs). As is applied to AlN layer, it would produce controllable stress leading variation device response. When adjusted between −30 30 V, experimental results show distinguishable improvement in PMUTs. First, characteristics, such as resonance frequency, −3 dB bandwidth (BW), and quality factor vary almost linearly with...

This Letter reports on microwave-induced thermoacoustic imaging utilizing a multi-cell aluminum scandium nitride (AlScN) piezoelectric micromachined ultrasonic transducer (PMUT). Thermoacoustic signals are induced by microwave pulses and then detected the transducer. It carries biological information, thus enabling noninvasive clinical diagnosis. Our AlScN PMUT device was characterized experimented to show that it could significantly improve of sample, decreasing mean square error up 72%,...

In this paper, the temperature performance of AlN-SAW resonators and AlScN-SAW is studied. They are simulated by COMSOL Multiphysics, their modes S11 curve analyzed. The two devices were fabricated using MEMS technology tested VNA, test results consistent with simulation results. Temperature experiments carried out control equipment. With change in temperature, changes parameters, TCF coefficient, phase velocity, quality factor Q show that resonator very good, both have good linearity. At...

In this paper, we propose a novel method for temperature measurement using surface acoustic wave (SAW) sensors on curved or irregular surfaces. We integrate SAW resonators onto flexible printed circuit boards (FPCBs) to ensure better conformity of the sensor with object under test. Compared traditional rigid PCBs, FPCBs offer greater dynamic flexibility, lighter weight, and thinner thickness, which make them an ideal choice making devices working measurements design array consisting three...

This letter reports broadened bandwidth aluminum nitride (AlN) piezoelectric micromachined ultrasound transducers (BB-PMUT) for photoacoustic imaging (PAI). PMUT based on microelectromechanical systems (MEMS) technology has gained significant attention PA endoscopic inside colorectal and even blood vessels due to its miniature size, high sensitivity, versatility. Broadened bandwidth, resulting from variable membrane cavity size during the fabrication process, provides benefits spatial...

A novel pressure sensor using piezoresistive silicon nanowires (SiNWs) embedded in a suspended multilayered diaphragm is investigated by probe-based dynamic cycling test combining the standard bulge testing setup. By utilizing high fracture stress of SiN <i xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">x</i> film, we explored behavior SiNW under level extralarge compressive strain for first time, including levels more than 2.1% static and 1.5%...

In this paper, a high-sensitivity microelectromechanical system (MEMS) piezoelectric accelerometer based on Scandium-doped Aluminum Nitride (ScAlN) thin film is proposed. The primary structure of silicon proof mass fixed by four cantilever beams. order to enhance the sensitivity accelerometer, Sc0.2Al0.8N used in device. transverse coefficient d31 measured beam method and found be −4.7661 pC/N, which approximately two three times greater than that pure AlN film. To further top electrodes are...

Ultrasonic nondestructive testing (NDT) usually utilizes conventional bulk piezoelectric transducers as transceivers. However, the complicated preparation and assembly process of ceramics limits development NDT probes toward miniaturization high frequency. In this paper, a 4.4 mm × aluminum nitride (AlN) micromachined ultrasonic transducer (PMUT) array is designed, fabricated, characterized, packaged for pulse–echo solids first time. The PMUT prepared based on cavity silicon-on-insulator...