Yu Jin

ORCID: 0009-0005-0619-1324
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Research Areas
  • X-ray Diffraction in Crystallography
  • Crystallization and Solubility Studies
  • Thin-Film Transistor Technologies
  • Silicon and Solar Cell Technologies
  • Photonic and Optical Devices
  • Semiconductor materials and devices
  • Mechanical and Optical Resonators
  • Advanced Semiconductor Detectors and Materials
  • Advanced Fiber Laser Technologies
  • Chalcogenide Semiconductor Thin Films
  • Advanced MEMS and NEMS Technologies
  • Organic Light-Emitting Diodes Research
  • Silicon Nanostructures and Photoluminescence
  • Advanced Queuing Theory Analysis
  • Organic Electronics and Photovoltaics
  • Advanced Surface Polishing Techniques
  • Image and Video Quality Assessment
  • Advanced Mathematical Theories and Applications
  • Radiation Effects in Electronics
  • Quantum Dots Synthesis And Properties
  • Vacuum and Plasma Arcs
  • Electrowetting and Microfluidic Technologies
  • Electromagnetic Compatibility and Noise Suppression
  • Particle Detector Development and Performance
  • Particle accelerators and beam dynamics

Beijing Polytechnic
2024

Vision Technology (United States)
2024

Kunshan Govisionox Optoelectronic (China)
2019-2024

Jiangnan University
2023

University of Electronic Science and Technology of China
2022

Huaqiao University
2012-2021

Peking University
1995-2017

Institute of Microelectronics
2015

Yanshan University
2014

City University of Hong Kong
1998

Summary In order to solve the problem of parameter identification for large‐scale multivariable systems, which leads a large amount computation algorithms, two recursive least squares algorithms are derived according characteristics systems. To further reduce and cut down redundant estimation, we propose coupled algorithm based on coupling concept. By same estimates between sub‐identification estimation subsystem vectors avoided. Compared with proposed in this article have higher...

10.1002/acs.3712 article EN International Journal of Adaptive Control and Signal Processing 2023-11-15

A silicon-based bilateral diode for fast neutron dose measurement is presented to take advantage of vertical and lateral current distributions achieve high uniform distribution. The structure designed place rectangle p+ n+ contacts on each side the n-Si wafer. Diodes with different parameters are fabricated sensitivity measured. It found that, in this research, increase space between two can effectively sensitivity. Furthermore, decrease contact length density also measured data verified model.

10.1109/tns.2014.2317757 article EN IEEE Transactions on Nuclear Science 2014-05-20

We distinctly reveal the difference in exciton generation processes phosphorescent organic light-emitting devices with an exciplex-type co-host and a single host. Excitons consisting of 4,4,4-tris(N-carbazolyl)-triphenylamine 1,3,5-tris(N-phenylbenzimidazol-2-yl)benzene are created via efficient energy transfer from exciplex to dopant. In contrast, excitons host formed by combination holes electrons trapped dopants. The optimized device utilizing system exhibits highly superior performance...

10.1364/ol.439516 article EN Optics Letters 2021-09-02

Abstract Etching residue is a kind of thorny technological issue in the manufacturing flat panel. In this work, we report on systematic investigation anode etching which widely generated low temperature polycrystalline Si‐active matrix organic light emitting diode (LTPS‐AMOLED). Firstly, proposed three kinds formation mechanisms, including Bernoulli equation‐based dynamic process, as well two other situations caused by absence electrochemical accelerated reaction and preprocessing,...

10.1002/jsid.1098 article EN Journal of the Society for Information Display 2022-01-20

Based on the calculation of lattice dynamic properties and observation first-order Raman spectra for Zn-Se localized microscopic interface mode (CdSe${)}_{4}$/(ZnTe${)}_{4}$ superlattice, multiphonon (MP) scattering up to five orders has been observed. The linewidth variation with MP order temperature as well frequency intensity behavior can be interpreted by anharmonic decay into extended band modes. These results show defectlike nature interfaces in AB/CD-type superlattices.

10.1103/physrevb.52.1477 article EN Physical review. B, Condensed matter 1995-07-15

Electrostatic discharge (ESD) is a significant cause of yield loss in FPD (Flat Panel Display) array manufacturing. LTPS‐TFT Arrays processing includes series chucking and conveyance steps, which, some these steps would generate triboelectric charge [1, 2]. Although low‐impedance materials for equipment contact parts with glass substrate have been adopted, good grounding has implemented, ESD still happens frequently. In order to understand the root‐cause minimize effect, it necessary...

10.1002/sdtp.13376 article EN SID Symposium Digest of Technical Papers 2019-09-01

Twin-spindle vertical machining center is a machine tool with two sets of high spindles in the Z direction and adjustable spindle distance X-axis on headstock. The headstock mounted column moves up down Z-direction guide rail accurately to realize movement complete requirements workpiece processing. Due double configuration main shaft component, no-load load Z-axis lead screw are doubled, so it necessary make counterweight balance load. system box core part center, which directly affects...

10.1117/12.3014911 article EN 2024-03-04

In this work, we report a systematic investigation of low‐temperature polycrystalline silicon (LTPS)‐based driving backboard electronic paper. Firstly, LTPS‐based thin film transistors (TFTs) with extremely low off‐state leakage current at large gate‐source voltage (VGS) 30 V were obtained through detailed explorations technology. Meanwhile, the high on‐state LTPS‐TFTs also meet requirements fast signal writing to storage capacitor due their field‐effect mobility (~100 cm 2 /V*s), making it...

10.1002/sdtp.17830 article EN SID Symposium Digest of Technical Papers 2024-06-01

Recent predictions suggest that oxides, such as MgO and CaO, could serve hosts of spin defects with long coherence times thus be promising materials for quantum applications. However, in most cases specific have not yet been identified. Here, by using a high-throughput first-principles framework advanced electronic structure methods, we identify an NV-like center favorable optical properties hybrid technologies. We show this defect has stable triplet ground excited states, singlet shelving...

10.48550/arxiv.2409.00246 preprint EN arXiv (Cornell University) 2024-08-30

Abstract In this work, we report a systematic investigation on Ag‐containing compound widely generated in anode wet etching process of low‐temperature polycrystalline Si active matrix organic light‐emitting diode (LTPS‐AMOLED). The formation mechanism the aforementioned was proposed and confirmed by sufficient evidence. relevant test results show that, unlike traditional metal compounds, cannot be removed aqueous oxalic acid solution. Furthermore, reported compounds grow migrate response to...

10.1002/jsid.895 article EN Journal of the Society for Information Display 2020-04-08

The silicon PIN radiation detectors are always used under high working voltages. breakdown voltage improvement has been researched in this paper. resistivity of the is larger than 20,000 Ω cm and thickness 1 mm. field plate field-limiting ring as well round corners applied for comprehensive improvement. impact limiting distance to main junction tested by varying from 30 μm 260 μm. simulation research on carried out. corner radius 500

10.1504/ijnt.2015.071786 article EN International Journal of Nanotechnology 2015-01-01

Interfacial vibrational modes (IFM's) of CdSe/ZnTe superlattice are shown for perfect and atomically rearranged interfaces with four probable exchange configurations. In addition to the IFM at $222{\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ originating from single interface Zn-Se ``wrong'' bonds (WB's), another $235{\mathrm{cm}}^{\mathrm{\ensuremath{-}}1}$ occurs due atomic rearrangement interfaces, which is attributed double WB's. Raman scattering on both atomic-layer-epitaxy...

10.1103/physrevb.57.1637 article EN Physical review. B, Condensed matter 1998-01-15

This paper reports a NEMS integrated photonic system, which integrate tunable laser, optical cross correct and variable attenuators. The system is fabricated with nano-silicon-photonic fabrication technology to various functions in single silicon circuit chip. high light-confinement capability of the nano-silicon waveguides guarantees superior performance. proposed demonstrates large tuning range (45 nm), pure single-mode properties dB side-mode-suppression ratio (SMSR)).

10.1109/transducers.2015.7181093 article EN 2015-06-01

We demonstrate a novel way to control the coupling rate in coupled ring resonators by controlling relative position of nanowires between two cavities modulate resonance frequencies. A new system is presented and experimental results show that tuning rate, can be stimulated at same time due frequency. This study will provide ways manipulate photonic silicon circuits benefit development optical achieve advanced functions.

10.1109/transducers.2017.7994125 article EN 2017-06-01

This paper demonstrates the optically induced self-excited relaxation oscillation in a silicon ring resonator for first time. The observed thermo-optomechanical has unique waveform with fast period close to 16 ns and slow approximately 167 ns. ultra-fast can be well used optical switch memory elements. Particularly, frequency is very sensitive wavelength detuning, making it quite suitable sensing applications.

10.1109/transducers.2015.7181343 article EN 2015-06-01

Anisotropic wet etching of high resistivity silicon by TMAH for the fabrication large area radiation detectors is studied in this work. widely applied microelectronics and micromechanical low silicon, whereas was seldom industry. This work focused on research lager wafer aiming at its application detector fabrication. We investigated properties 4 inch (111) wafers. Various parameters combinations were explored, such as solution concentration 25wt%, 15wt% 5wt%, temperature 95 °C, 90 °C 85 °C....

10.4028/www.scientific.net/amr.901.15 article EN Advanced materials research 2014-02-01
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