A5089695285- Nanowire Synthesis and Applications
- 2D Materials and Applications
- Perovskite Materials and Applications
- Photonic and Optical Devices
- Semiconductor materials and interfaces
- MXene and MAX Phase Materials
- Solid-state spectroscopy and crystallography
- Advanced Semiconductor Detectors and Materials
- Semiconductor materials and devices
- Environmental and Agricultural Sciences
- Forest, Soil, and Plant Ecology in China
- Fuel Cells and Related Materials
- Boron and Carbon Nanomaterials Research
- Advancements in Semiconductor Devices and Circuit Design
- Phytase and its Applications
- Plant nutrient uptake and metabolism
- Potato Plant Research
- Plant Pathogens and Fungal Diseases
- GaN-based semiconductor devices and materials
- Coal and Coke Industries Research
- Photocathodes and Microchannel Plates
- Semiconductor Quantum Structures and Devices
- Freezing and Crystallization Processes
- Chalcogenide Semiconductor Thin Films
- Electrocatalysts for Energy Conversion
Anhui University
2024-2025
Hefei Institutes of Physical Science
2024
China University of Geosciences
2023
Tokyo Institute of Technology
2015-2016
Binghamton University
2015
Anhui Agricultural University
2012
Peking University
2009
On-chip polarized photodetectors play a crucial role in advancing ultra-compact optoelectronic devices for next-generation technologies. However, simultaneously detecting the angle of linear polarization (AoLP) and degree (DoLP) within single device remains challenging task, particularly due to inherently weak states found naturally anisotropic materials. In this paper, it is reported on development twisted monopole barrier photodetector based PdSe2/MoS2/PdSe2 configuration. This features...
The breakthrough in van der Waals heterojunction diodes composed of 2D and 3D materials for optoelectronic devices has paved the way advancements broadband optical imaging. However, fabricating traditional array‐based imaging detectors with these remains challenging. Cadmium sulfide (CdS), a historically significant semiconductor material, been extensively used due to its remarkable photoelectric properties chemical stability. Notably, unique type‐I can be formed by combining CdS, prepared...
The mixed-dimensional (MD) van der Waals (vdWs) heterojunction for photodetectors has garnered significant attention owing to its exceptional compatibility and superior quality. Low-dimensional material heterojunctions exhibit unique photoelectric properties attributed their nanoscale thickness vdWs contact surfaces. In this work, a novel MD composed of one-dimensional (1D) Nb2Pd3Se8 nanowires two-dimensional (2D) WSe2 nanosheets is proposed. heterojunction's energy band engineering...
Abstract Van der Waals heterostructures (vdWHs) consisting of 2D materials offer a practical and effective approach for engineering multifunctional, high‐performance photodetectors. However, vdWHs photodetectors based on photoconductive effects require an external power input are often accompanied by large dark current, which hinders the development miniaturization portability devices greatly limits application in complex environments. Herein, self‐powered photodetector constructed from...
We show that Rb 2 CdCl 4 /Ba OSb van der Waals heterostructures exhibit a rare type-III band alignment with broken gap, which can be tuned by applying strain or an external electric field, paving the way for novel tunnel field-effect transistors.
Excitons in van der Waals heterostructures having interlayer or intralayer types are responsible for their optical absorption properties. Here, we systematically investigate the band alignment and excitons ${\mathrm{MoSi}}_{2}{\mathrm{N}}_{4}/{\mathrm{WSi}}_{2}{\mathrm{N}}_{4}$ heterostructure using ab initio $GW$ calculations Bethe-Salpeter equation. The quasiparticle energy spectrum shows that valence maximum conduction minimum from different layers, hence is type II this heterostructure....
We report on the growth and fabrication of deep ultraviolet (DUV) light emitting diodes (LEDs) an AlN template which was grown a pulsed atomic-layer epitaxial buffer layer. Threading dislocation densities in layer are greatly decreased with introduction this The crystalline quality AlGaN epilayer is further improved by using low-temperature GaN interlayer between AlN. Electroluminescences different DUV-LED devices at wavelength 262 317 nm demonstrated. To improve hole concentration p-type...
Ge/Si core/shell nanowires are fabricated with narrow (20 nm) Ge core and thin (2 Si shell. prepared by vapor–liquid–solid (VLS) chemical vapor deposition (CVD). The low-temperature (450 °C) process using Si2H6 gas as a CVD source is essential to form ultrathin layer of epitaxial film onto very nanowires. Accumulation holes in confined the shell confirmed electrical measurement.
Abstract Ge/Si core/shell nanowires (Ge/Si-NWs) are promising materials for applications such as transistors, sensors, and thermoelectric devices. A major problem in the synthesis of Ge/Si-NWs using Au catalysts conjunction with vapor–liquid–solid chemical vapor deposition is formation branched Si on surface Ge because migration nanoparticles that serve seeds. Based an analysis Au–Ge phase diagram, we propose a method to mitigate this issue. By introducing Ge-rich conditions during...
Germanium/silicon core/shell nanowires (Ge/Si NWs) are expected to exceed the properties of single-element Ge and Si as 1D structure materials. This is due valence band offset between at heterostructure interface that serves a confinement potential for quantum well. In their work presented on pp. 1578–1581, Noguchi et al. synthesized Ge/Si NWs with controlled thickness shell in low-pressure chemical vapor deposition reactor (LPCVD) using gold nanoparticles catalyst. The were first grown low...
Abstract Germanium nanowires (Ge NWs) grown at high temperatures (HTs) are investigated because of the demand for impurity doping. However, gold agglomeration, which occurs HTs, results in undesired moundlike structures. A two-step growth technique with temperature modulation from low (LTs) to HTs was adopted prevent thus revealing high-yield HT Ge NWs on top LT NWs. These can be classified into two groups basis their shape. The timing migration plays a crucial role determining shape these...
Browning syrup decolorization in the fig candied fruit production influences quality of products seriously.In order to ensure and improve efficiency,it was necessary research browning decolorization. Through single factor test orthogonal by joint discoloring agent,the optimum process conditions were: bamboo powder activated carbon + H103 resin,decolorizing time 60~70 min,decolorization p H7.0,decolorization temperature 48 ℃,decolorant ratio m( H103)∶ carbon)=1∶ 2.0,reductant dosage 6.5 g /20...