In this work, a hybrid integrated tunable external cavity laser (ECL) with sub-10 Hz intrinsic linewidth is demonstrated. ECL, two Si3N4-based subwavelength hole defect assisted microring resonators, acting as high-Q reflectors, are butt-coupled chip-scale semiconductor optical amplifier at the edges, respectively. The experimental results show that ECL achieves across wavelength tuning range from 1525 to 1565 nm, featuring record lowest value of 6.06 Hz. demonstrated opens up opportunities...

We have investigated phase separation, silicon nanocrystal (Si NC) formation and optical properties of Si oxide (SiOx, 0<x<2) films by high-vacuum annealing dry oxidation. The SiOx were deposited plasma-enhanced chemical vapor deposition at different nitrous–oxide/silane flow ratios. physical the studied as a result thermal X-ray photoelectron spectroscopy (XPS) reveals that as-deposited random-bonding or continuous-random-network structure with oxidation states. After...

Breakdowns in ultrathin gate oxide (Gox) ranging from 16-33 /spl Aring/ were physically analyzed with transmission electron microscope after constant voltage stress. In the Gox of 25 and 33/spl Aring/, a dielectric breakdown induced epitaxy (DBIE) at region is detected for compliance current 100 nA above, regardless hardness. The transition soft (SBD) to hard (HBD) found be range 10-100 mu/A, whereas thinner 16 upper limit SBD HBD greatly reduced around 1 - 10 mu/A DBIE hardly detected....

The degradation mechanism of breakdown spots in ultrathin gate dielectrics metal-oxide-semiconductor transistor associated with dielectric-breakdown-induced epitaxy (DBIE) evolution is physically analyzed using high resolution transmission electron microscope (HRTEM). initial soft location triggered by percolation path happens randomly along the channel, and then evolves to formation DBIE vicinity path. If leakage current not limited, will grow effective successively shift either source or...

With the acknowledged insufficiency of traditional Ta or TaN barriers, deposited by physical vapor deposition (PVD), in Cu/porous ultralow-k intermetal dielectric integration, an amorphous hydrogenated SiC (a-SiC:H)/Ta bilayer sidewall diffusion barrier has been fabricated using 0.13 μm [Porous-SiLK (Proprietary product from Dow Chemical Corporation, USA), k∼2.2] single damascene process. The electrical tests show that line-to-line leakage current and breakdown field (EBD) samples with this...

ABSTRACT Background Exosomes have been established to be enriched with various long noncoding RNAs (lncRNAs) and circular (circRNAs) that exert biological effects. However, the lncRNA‐ circRNA‐mediated coexpression competing endogenous RNA (ceRNA) regulatory network in exosomes derived from plasma of patients lung adenocarcinoma (LUAD) remains elusive. Methods Results This study enrolled nine three healthy individuals, differential expression messenger (mRNAs), lncRNAs, circRNAs was detected...

Based on physical analysis results, a model describing the breakdown (BD) mechanism of HfO/sub 2//polysilicon gate stack is proposed. Due to high mechanical strength and polycrystalline nature annealed 2/ dielectrics, very complicated BD induced thermo-chemical reaction self-healing process, transient evolution in stacks are different from that ultrathin SiO/sub x/N/sub y/. The formation percolation path probably assisted by grain boundaries and/or enhanced electric field near poly-Si edge....

Based on a simple but compact gate-dielectric-breakdown (BD) model, the effective resistance and diameter evolution associated with conductor-like percolation path during BD in ultrathin gate dielectrics are characterized. Together finite element analysis, it is found that energy dissipation via can be substantially high localized temperature vicinity of spot able to induce microstructural damages dopant redistribution. The narrow structures MOSFETs further enhance heating effect dielectric...

Focused Ion Beam (FIB) milling has been widely used for the preparation of TEM specimens in both cross-section and plan view configurations. FIB induced damage is a non-negligible influence on making thin clear specimen. Low-KV one solutions to reduce ion beam created current operation system. An understanding type generated artifact different materials important subsequent analyses optimize sample process. In this paper, three types materials, Si, ZnO Cu have selected study normal low-KV...

The breakdown failure mechanism in HfO/sub 2/ high-k gate dielectrics under constant voltage stress inversion and accumulation mode is physically analyzed with the aid of high resolution transmission electron microscopy. results show that phenomenon different from ultrathin SiO/sub x/N/sub y/ Si/sub 3/N/sub 4/ dielectrics. Dielectric-breakdown-induced epitaxy, which defect responsible for 4/, has also been observed but a slightly morphology. microstructural damages are probably related to...

A method has been developed to determine the effective resistance of a conductive breakdown (BD) path formed in ultrathin gate dielectric. Based on this method, evolution percolation (R/sub perc/) during progressive BD (PBD) is studied details. It found that R/sub perc/ rapidly degrades initial stage PBD with rate 0.1-0.2 dec/s. As continues evolve, degradation drastically slows down, and parasitic becomes increasingly significant. In later PBD, very slow rate, leading saturation perc/....

The barrier properties of plasma-enhanced chemical vapor deposited (PECVD) SiN thin films capped on post mechanical polishing Cu film were investigated by various analytical techniques, such as secondary-ion mass spectrometry (SIMS), transmission electron microscopy, and atomic force focusing the effect NH3 plasma pretreatment. at 400 °C in a sequential multistage deposition system. Much less contamination was detected surface with pretreatment, compared to that without Also, amount Si...

Erbium silicide Schottky diodes formed on Si(001) substrate using rapid thermal annealing method show degraded Schottky-barrier height /spl phi//sub Beff/ and ideality factor n due to the presence of silicide-induced microstructural defects which are likely sources trap states. A improve utilizing in situ Ar plasma cleaning induce a light amorphization is proposed. Even though this way less textured have poorer interface, they free defects, leading an overall improvement current transport...

Dielectric∕metal bilayer diffusion barriers with different silicon carbide films (SiCO, SiCN, and SiC) were fabricated for use in Cu∕porous low-k damascene interconnects. The sidewall show significant performance improvements terms of breakdown strength leakage current characteristics compared conventional physical vapor deposited metal barriers. SiC∕Ta SiCN∕Ta are good candidates interconnects due to their superior electrical even after long-time thermal∕electrical stress. However, the...

A robust dielectric/metal bilayer sidewall diffusion barrier, using a-SiC:H as the dielectric layer and Ta metal layer, was integrated with Cu/porous organic ultra low-k damascene structure. The reliability electrical performance of a-SiC:H/Ta barrier were significantly better than conventional physical vapor deposition (PVD) multi-stacked Ta(N) barrier. plasma enhanced chemical (PECVD) is able to effectively seal rough surface porous material, resulting in improved reliability.

Formation of Co-silicide contact layers on narrow silicon regions using multiple-pulse excimer laser annealing is demonstrated. Excellent performance junction leakage behavior can be attained narrow-width n/sup +//p and p/sup +//n as compared with standard rapid thermal annealed samples. Liquid-phase epitaxial regrowth has been found to occur create a smooth abrupt silicide/Si interface high integrity annealing. Heat confinement created by the shallow trench isolation surrounding junctions...

Metal nanoparticles have been found to exhibit a broad spectrum of antibacterial activities, yet not all metals possess the captivating plasmonic properties necessary for effective interaction with incident light. In this study, we demonstrate feasibility synergistically enhancing Cu-induced activity through incorporation photothermal therapy by hybridlike anchoring Cu component on gold (Au) nanoplate that can effectively absorb near-infrared To fabricate Janus structure, plate-like Au seeds...