Original approach to detect and quantify carbon atoms located in different chemical states SiGeC films using X-ray photoelectron spectroscopy.

Lattice-matched SiGeC with ~20% of Ge was grown at 550°C, 10 Torr on a 300 mm Si substrate in an industrial standard Reduced Pressure Chemical Vapor Deposition reactor using commercially available 2 H 6 /GeH 4 /SiH 3 CH precursors. Thicknesses exceeding 250 nm resulted cluster formation [C] Sub ~2.0% and Int ~0.4%, surface density up to 6.13x10 µm -2 . Room temperature photoluminescence measurements showed that the clusters were non-radiative defects Transmission Electron Microscopy, ASTAR...

The performance of an HBT is primarily influenced by 1D dopant profile obtained CVD epitaxy. Typically, three epitaxial layers are required to construct HBT: the collector, intrinsic base, and emitter. Collector layer can be grown either NSEG or selective While process cost effective, it results in autodoping. Switching epitaxy mitigate autodoping but must controlled minimize faceting. base critical device performance, with boron positioning being a key factor. Incorporating substitutional...

Low resistivity materials are required for advanced MOS or equivalent technologies. High boron in-situ doped Si epitaxy is known to create defects that increase the resistivity. Boron delta-doping (Si:B alternating with saturation layers) a potential solution overcome this limitation. Using process at 750 °C in Reduced Pressure Chemical Vapor Deposition reactor, two times lower than without (8.9x10 -4 Ω.cm and 1.86x10 -3 respectively) was achieved. SIMS characterization measured total...

In this paper, SiGeC:B growth behaviors at 550 °C, 10 Torr, were studied in a 300 mm industrial Reduced Pressure-Chemical Vapor Deposition reactor using Si 2 H 6 /GeH 4 /SiH 3 CH /B chemistry. Carbon atoms, for both SiGeC and layers, only incorporated into substitutional sites, with concentrations up to ~ 1.4 at%. It appeared that in-situ boron doping level of 1x10 20 at.cm -3 did not modify the carbon incorporation. However, atoms shown compete incorporation as outlined by increased films...

Polycrystalline Si and SiGe-based materials deposited on dielectrics have a wide range of key applications, like as gate for complementary metal oxide semiconductor (CMOS) devices [1-2], active layers in thin film transistors (TFTs) [3] dopant diffusion sources to form ultra-shallow elevated junctions [4]. The control the or SiGe nucleation dielectric surfaces is also towards selective epitaxy at low growth temperature. At these temperatures, standard process, where precursors etching gas...

Silicon Germanium (SiGe) Heterojunction Bipolar Transistors (HBTs) are used daily, mainly in the communication field. Their co-integration with Complementary Metal Oxide Semiconductor (CMOS) technology, i.e. BiCMOS, enables versatile microchips that combine analog, radio-frequency and digital functions. Applications drive development of BiCMOS technologies today Low Earth Orbit (LEO) satellite communications, for which minimum noise figure SiGe HBT (NF MIN ) between 10 30 GHz is one most...

To reach the electrical performance of advanced CMOS technology, source and drain contact resistance becomes a key figure merit. By reducing size devices, minimum active carrier concentration required to obtain sufficiently low high-performance increases. However, incorporation dopants by Reduced Pressure-Chemical Vapor Deposition (RP-CVD) is limited <10 20 at/cm 3 (substitutional atoms). For high B 2 H 6 flow ratio (F[B ]/F[H ] 7.1x10 -06 at 750 °C, 10 torr), material either forms...

State of the art semiconductor manufacturing seeks to expand its range Si-based materials with novel properties, boosting performance comply customer demands. These mostly comprise large lattice parameter like Ge-rich or group III/V alloys. To reduce costs, heteroepitaxy these on Si substrates is desired. Buffer solutions SiGe [1] Ge Virtual Substrates [2] patterned Superlattices [3] usually do not result in threading dislocations densities below 10 6 cm -2 , which affects device and process...

Selective epitaxy is a process used in wide range of applications such as Heterojunction Bipolar Transistors (HBT) [1] Raised Sources and Drains (RSDs) for n-type Field Effect (fin-FETs) [2], p-type Metal Oxide Semiconductor (pMOSFETs) [3] or III-V-on-Si heteroepitaxy optoelectronic devices [4] ... Standard selective epitaxial growth, called co-flow process, requires Cl, provided by HCl, to etch poly/amorphous nuclei on the dielectric during allowing deposition restricted areas not covered...

In this paper, SiGe or SiGeC epitaxy with Silane Disilane, Germane and Methylsilane precursors was studied in a 300 mm industrial Reduced Pressure-Chemical Vapor Deposition (RP-CVD) reactor. The growth rate exponentially increased the temperature 500 °C - 600 range for both silicon (activation energy E = 2.1 eV). It was, at 550 °C, almost twice higher Si 2 H 6 than SiH 4 . At low temperature, is indeed more reactive , resulting rates significantly given germanium composition. Then, carbon...

Emitter resistivity should be optimized to increase the electrical performances of bipolar transistors. A non-selective Si:As deposition at temperature higher than 600 °C is currently used fabricate such emitters: poly grows on dielectrics whereas monocrystalline Si. fully material would needed reduce emitter resistivity, however. Therefore, a new process performed 550 has been developed with Si 2 H 6 as precursor. mono-crystallinity achieved by coupling amorphous and solid phase epitaxy...

In this paper, epitaxial growths or depositions were performed, in 300 mm RP-CVD chambers, on two types of templates: N-type Si substrates poly-Si/oxide/ P-type substrates. SiH 4 +HCl+H 2 and Cl +HCl+GeH +H chemistries used to deposit SiGe layers between 675-750°C 10-20 Torr such wafers. Monocrystalline polycrystalline growth kinetics similar for intrinsic SiGe. Meanwhile, boron incorporation different mono-Si:B, mono-SiGe:B, poly-Si:B poly-SiGe:B layers. While the impact B atoms is well...

Reduced Pressure Chemical Vapor Deposition (RP-CVD) Epitaxy bellow 600 °C is studied for 3D sequential integration [1] where cyclic deposition needed. Another approach can be useful with Si epitaxy at temperature : the of amorphous on dielectric during non-selective combined solid phase regrowth (SPER) to extend monocrystalline area. Indeed, using above epitaxy, a polycrystalline film formed dielectric. This technique has been used in heterojunction bipolar transistor base [2] and also...

Monocrystalline SiGe alloys can be used instead of monocrystalline Si in order to increase the performances devices such as heterojunction bipolar transistors (HBTs) [1]. The epitaxial growth blanket, layers on with a dichlorosilane + germane hydrochloric acid chemistry was extensively investigated literature [2,3]. Similarly, switch from polycrystalline favorable, for instance, Complementary-MOS (C-MOS) [4,5]. However, blanket by Reduced-Pressure Vapor Deposition (RP-CVD) and has not been...

The incorporation of germanium and carbon by RP-CVD epitaxy in silicon brings lots interest devices thanks to the variety properties that can be addressed: band gap or lattice parameter engineering, dopant diffusion reduction, chemical properties, optical properties... For all applications requiring SiGeC materials, atoms must incorporated fully substitutional site (C s ) despite its low bulk solubility into Si SiGe (3x10 17 at.cm -3 at melting point). Beyond a total concentration (depending...