A. Dorokhov

ORCID: 0000-0001-5809-524X
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About
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Research Areas
  • Particle Detector Development and Performance
  • Radiation Detection and Scintillator Technologies
  • CCD and CMOS Imaging Sensors
  • Renewable energy and sustainable power systems
  • Building energy efficiency and sustainability
  • Particle physics theoretical and experimental studies
  • Dark Matter and Cosmic Phenomena
  • High-Energy Particle Collisions Research
  • Nuclear Physics and Applications
  • Advancements in Semiconductor Devices and Circuit Design
  • Advanced Semiconductor Detectors and Materials
  • Advanced Optical Sensing Technologies
  • Atomic and Subatomic Physics Research
  • Silicon and Solar Cell Technologies
  • Medical Imaging Techniques and Applications
  • Analog and Mixed-Signal Circuit Design
  • Particle Accelerators and Free-Electron Lasers
  • Gas Sensing Nanomaterials and Sensors
  • Advancements in Photolithography Techniques
  • Infrared Target Detection Methodologies
  • Radiation Effects in Electronics
  • Radio Frequency Integrated Circuit Design
  • Life Cycle Costing Analysis
  • Superconducting and THz Device Technology
  • Photocathodes and Microchannel Plates

Institut Pluridisciplinaire Hubert Curien
2011-2025

Centre National de la Recherche Scientifique
2011-2024

Université de Strasbourg
2011-2024

Institut National de Physique Nucléaire et de Physique des Particules
2007-2015

Institut de Recherche Dupuy de Lôme
2006-2010

Paul Scherrer Institute
2003-2007

University of Zurich
2003-2007

Universidad del Noreste
2002

Abstract Within the context of ALICE ITS3 collaboration, a set MAPS small-scale test structures were developed using 65 nm TPSCo CMOS imaging process with upgrade inner tracking system as its primary focus. One such sensor, Circuit Exploratoire (CE-65), and evolution CE-65v2, to explore charge collection properties for varying configurations including layer (standard, blanket, modified gap), pixel pitch (15, 18, 22.5 µm), geometry (square vs hexagonal/staggered). In this work...

10.1088/1748-0221/20/01/c01019 article EN cc-by Journal of Instrumentation 2025-01-01

The ILD detector is proposed for an electron-positron collider with collision centre-of-mass energies from 90~\GeV~to about 1~\TeV. It has been developed over the last 10 years by international team of scientists goal to design and eventually propose a fully integrated detector, primarily International Linear Collider, ILC. In this report fundamental ideas concepts behind are discussed technologies needed realisation reviewed. document starts short review science goals ILC, how can be...

10.48550/arxiv.2003.01116 preprint EN other-oa arXiv (Cornell University) 2020-01-01

ULTIMATE is a reticle size CMOS Pixel Sensor (CPS) designed to meet the requirements of STAR pixel detector (PXL). It includes array 928 rows and 960 columns with 20.7 μm pitch, providing sensitive area ∼ 3.8 cm2. Based on sensor for EUDET beam telescope, device binary output integrated zero suppression circuitry featuring 320 Mbps data throughput capability. was fabricated in 0.35 OPTO process early 2011. The design preliminary test results, including charged particle detection performances...

10.1088/1748-0221/7/01/c01102 article EN Journal of Instrumentation 2012-01-27

The MIMOSA pixel sensors developed in Strasbourg have demonstrated attractive features for the detection of charged particles high energy physics. So far, full-size been prototyped only with analog readout, which limits output rate to about 1000 frames/second. new 26 sensor provides a 2.2 cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> sensitive surface an improved readout speed 10,000 frames/second and data throughput compression. It...

10.1109/nssmic.2009.5402399 article EN 2009-10-01

We describe the planned near-term and potential longer-term upgrades of Belle II detector at SuperKEKB electron-positron collider operating KEK laboratory in Tsukuba, Japan. These will allow increasingly sensitive searches for possible new physics beyond Standard Model flavor, tau, electroweak dark sector that are both complementary to competitive with LHC other experiments.

10.48550/arxiv.2406.19421 preprint EN arXiv (Cornell University) 2024-06-26

CMOS Monolithic Active Pixel Sensors (MAPS) have demonstrated their strong potential for tracking devices, particularly flavour tagging. They are foreseen to equip several vertex detectors and beam telescopes. Most applications require high read-out speed, which imposes sensors feature digital output with integrated zero suppression. The most recent development of MAPS at IPHC IRFU addressing this issue will be reviewed. design architecture, combining pixel array, column-level discriminators...

10.1088/1748-0221/4/04/p04012 article EN Journal of Instrumentation 2009-04-21

ALICE plans to replace its Inner Tracking System during the second long shut down of LHC in 2019 with a new 10 m2 tracker constructed entirely monolithic active pixel sensors. The TowerJazz 180 nm CMOS imaging Sensor process has been selected produce sensor as it offers deep pwell allowing full in-pixel circuitry and different starting materials. First full-scale prototypes have fabricated tested. Radiation tolerance also verified. In this paper development charge sensitive front end...

10.1088/1748-0221/11/02/c02042 article EN cc-by Journal of Instrumentation 2016-02-15

With the next upgrade of ALICE inner tracking system (ITS3) as its primary focus, a set small MAPS test structures have been developed in 65 nm TPSCo CMOS process. The CE-65 focuses on characterisation analogue charge collection properties this technology. latest iteration, CE-65v2, was produced different processes (standard, with low-dose n-type blanket, and blanket gap between pixels), pixel pitches (15, 18, 22.5 $\mu$m), arrangements (square or staggered). comparatively large array size...

10.48550/arxiv.2502.04070 preprint EN arXiv (Cornell University) 2025-02-06

Abstract With the next upgrade of ALICE inner tracking system (ITS3) as its primary focus, a set small MAPS test structures have been developed in 65 nm TPSCo CMOS process. The CE-65 focuses on characterisation analogue charge collection properties this technology. latest iteration, CE-65v2, was produced different processes (Standard, with low-dose n-type blanket, and blanket gap between pixels), pixel pitches (15, 18, 22.5 µm) arrangements (square or staggered). comparatively large array...

10.1088/1748-0221/20/03/c03033 article EN cc-by Journal of Instrumentation 2025-03-01

10.1016/j.nima.2011.04.018 article EN Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2011-04-30

CMOS Monolithic Active Pixel Sensors (MAPS) demonstrate excellent performances in the field of charged particle tracking. A single point resolution 1–2 μm and a detection efficiency close to 100% were routinely observed with various MAPS designs featuring up 106 pixels on active areas as large 4 cm2[1]. Those features make an interesting technology for vertex detectors heavy ion physics. In order adapt sensors high fluxes expected this application, we designed sensor fast column parallel...

10.1088/1748-0221/6/02/c02004 article EN Journal of Instrumentation 2011-02-16

Abstract The Belle II collaboration has initiated a program to upgrade its detector in order address the challenges set by increase of SuperKEKB collider luminosity, targeting 6×10 35 cm 2 s -1 . A monolithic CMOS pixel sensor named OBELIX (Optimized BELle pIXel) is proposed equip 5 detection layers upgrading current vertex detector. Based on existing TJ-Monopix2, currently designed 180 nm process.

10.1088/1748-0221/19/04/c04020 article EN Journal of Instrumentation 2024-04-01

Abstract Targeting a peak luminosity of 6 × 10 35 cm -2 s -1 , the Belle II experiment at SuperKEKB in Japan is considering an upgrade its interaction region. This involves vertex detector, which will be replaced by new fully pixelated detector (VTX). A monolithic CMOS pixel sensor named OBELIX (Optimized BELle pIXel) proposed to used VTX. Based on existing TJ-Monopix2 chip initially developed for ATLAS Inner Tracker (ITk) upgrade, designed 180 nm process with improved matrix and additional...

10.1088/1748-0221/20/02/c02046 article EN Journal of Instrumentation 2025-02-01

Charge collection measurements performed on heavily irradiated p-spray DOFZ pixel sensors with a grazing angle hadron beam provide sensitive determination of the electric field within detectors. The data are compared complete charge transport simulation sensor which includes free carrier trapping and induction effects. A linearly varying based upon standard picture constant type-inverted effective doping density is inconsistent data. two-trap double junction model implemented in ISE TCAD...

10.1109/tns.2005.852748 article EN IEEE Transactions on Nuclear Science 2005-08-01

Abstract A series of monolithic active pixel sensor prototypes (APTS chips) were manufactured in the TPSCo 65 nm CMOS imaging process framework CERN-EP R&amp;D on sensors and ALICE ITS3 upgrade project. Each APTS chip contains a 4 × matrix with fast analog outputs buffered to individual pads. To explore characteristics, various pitches (10 µm–25 µm), geometries reverse biasing schemes included. Prototypes are fully functional detailed characterization ongoing. The design will be presented...

10.1088/1748-0221/18/01/c01065 article EN Journal of Instrumentation 2023-01-01

10.1016/j.nima.2003.09.043 article EN Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2003-11-02

10.1016/j.nima.2013.06.101 article EN Nuclear Instruments and Methods in Physics Research Section A Accelerators Spectrometers Detectors and Associated Equipment 2013-07-04
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