A5057875933- 2D Materials and Applications
- Perovskite Materials and Applications
- Graphene research and applications
- MXene and MAX Phase Materials
- Chalcogenide Semiconductor Thin Films
- Semiconductor Quantum Structures and Devices
- Quantum Dots Synthesis And Properties
- Advanced Semiconductor Detectors and Materials
- Advanced Wireless Communication Techniques
- Advanced Sensor and Energy Harvesting Materials
- Advanced biosensing and bioanalysis techniques
- Molecular Junctions and Nanostructures
- Advanced Memory and Neural Computing
- Machine Learning in Materials Science
- Semiconductor materials and interfaces
- Quantum and electron transport phenomena
- Semiconductor materials and devices
- Ga2O3 and related materials
- Wireless Communication Networks Research
- Error Correcting Code Techniques
- Strong Light-Matter Interactions
- Hippo pathway signaling and YAP/TAZ
- Electronic and Structural Properties of Oxides
- Lung Cancer Diagnosis and Treatment
- Axon Guidance and Neuronal Signaling
National Tsing Hua University
2007-2025
Chung Shan Medical University
2025
National Synchrotron Radiation Research Center
2024
Research Center for Applied Science, Academia Sinica
2024
National Pingtung University of Science and Technology
2024
National Cheng Kung University
2024
The University of Texas at Austin
2019-2023
National Yang Ming Chiao Tung University
2012-2022
National Taiwan University
2022
Fu Jen Catholic University
2015-2020
Monolayer molybdenum disulfide (MoS2) has become a promising building block in optoelectronics for its high photosensitivity. However, sulfur vacancies and other defects significantly affect the electrical optoelectronic properties of monolayer MoS2 devices. Here, highly crystalline diselenide (MoSe2) monolayers have been successfully synthesized by chemical vapor deposition (CVD) method. Low-temperature photoluminescence comparison MoSe2 reveals that shows much weaker bound exciton peak;...
Optical second harmonic generation (SHG) is known as a sensitive probe to the crystalline symmetry of few-layer transition metal dichalcogenides (TMDs). Layer-number dependent and polarization resolved SHG have been observed for special case Bernal stacked TMDs, but it remains largely unexplored structures deviated from this ideal stacking order. Here we report on homo- heterostructural TMD bilayers formed by artificial with an arbitrary angle. The twisted coherent superposition SH fields...
Two-dimensional transition metal dichalcogenides have emerged as a new class of semiconductor materials with novel electronic and optical properties interest to future nanoelectronics technology. Single-layer molybdenum disulphide, which represents prototype two-dimensional dichalcogenide, has an bandgap that increases decreasing layer thickness. Using high-resolution scanning tunnelling microscopy spectroscopy, we measure the apparent quasiparticle energy gap be 2.40 ± 0.05 eV for...
Abstract 2D ferroelectric material has emerged as an attractive building block for high‐density data storage nanodevices. Although monolayer van der Waals ferroelectrics have been theoretically predicted, a key experimental breakthrough such calculations is still not realized. Here, hexagonally stacking α‐In 2 Se 3 nanoflake, rarely studied polymorph, reported to exhibit out‐of‐plane (OOP) and in‐plane (IP) ferroelectricity at room temperature. Ferroelectric multidomain states in hexagonal...
Stacking of MoS2 and WSe2 monolayers is conducted by transferring triangular on top monolayers, all grown chemical vapor deposition (CVD). Raman spectroscopy photoluminescence (PL) studies reveal that these mechanically stacked are not closely coupled, but after a thermal treatment at 300 °C, it possible to produce van der Waals solids consisting two interacting transition metal dichalcogenide (TMD) monolayers. The layer-number sensitive out-of-plane mode A21g for (309 cm–1) found the...
Piezoelectric materials have been widely used for sensors, actuators, electronics, and energy conversion. Two-dimensional (2D) ultrathin semiconductors, such as monolayer h-BN MoS2 with their atom-level geometry, are currently emerging new attractive members of the piezoelectric family. However, polarization is commonly limited to in-plane direction odd-number layers, largely restricting application in integrated nanoelectromechanical systems. Recently, theoretical calculations predicted...
Abstract A robust valley polarization is a key prerequisite for exploiting pseudospin to carry information in next-generation electronics and optoelectronics. Although monolayer transition metal dichalcogenides with inherent spin–valley coupling offer unique platform develop such valleytronic devices, the anticipated long-lived has not been observed yet. Here we demonstrate that valley-polarized holes WSe 2 can be initialized by optical pumping. Using time-resolved Kerr rotation...
Layered growth of molybdenum disulphide (MoS 2 ) was successfully achieved by pulsed laser deposition (PLD) method on c ‐plane sapphire substrate. Growth monolayer to a few MoS , dependent the number excimer in PLD is demonstrated, indicating promising controllability layer growth. Among samples with various pulse deposition, frequency difference (A 1g –E 1 2g Raman analysis 70 sample estimated as 20.11 cm –1 suggesting obtained. Two‐dimensional (2D) confirmed streaky reflection high energy...
Abstract Monolayer transition metal dichalcogenides, such as MoS 2 and WSe , have been known direct gap semiconductors emerged new optically active materials for novel device applications. Here we reexamine their properties by investigating the strain effects on photoluminescence of monolayer . Instead applying stress, investigate imaging exciton populations in –MoS MoSe –WSe lateral heterojunctions with inherent inhomogeneity. We find that unstrained is actually an indirect material,...
The optical energy gap of as-grown MoS2 flakes from chemical vapor deposition can be modulated 1.86 eV (667 nm) to 1.57 (790 by a phase selenization process. This approach, replacing one chalcogen another in the gas phase, is promising modulating and electronic properties other transition metal dichalcogenide monolayers. As service our authors readers, this journal provides supporting information supplied authors. Such materials are peer reviewed may re-organized for online delivery, but not...
Abstract Van der Waals heterobilayers of transition metal dichalcogenides with spin–valley coupling carriers in different layers have emerged as a new platform for exploring spin/valleytronic applications. The interlayer was predicted to exhibit subtle changes the atomic registry. Manually stacked heterobilayers, however, are incommensurate inevitable twist and/or lattice mismatch, where properties associated registry difficult access by optical means. Here, we unveil distinct polarization...
The properties of van der Waals (vdW) heterostructures are drastically altered by a tunable moir\'e superlattice arising from periodic variations atomic alignment between the layers. Exciton diffusion represents an important channel energy transport in semiconducting transition metal dichalcogenides (TMDs). While early studies performed on TMD heterobilayers have suggested that carriers and excitons exhibit long lengths, rich variety scenarios can exist. In crystal with large supercell size...
The electronic and optical properties of transition metal dichalcogenide (TMD) materials are directly governed by their energy gap; thus, the band gap engineering has become an important topic recently. Theoretical some experimental results have indicated that these monolayer TMD alloys exhibit direct-gap remain stable at room temperature, making them attractive for optoelectronic applications. Here we systematically compared two approaches forming MoS2xSe2(1-x) alloys: selenization MoS2...
It is critically important to characterize the band alignment in semiconductor heterojunctions (HJs) because it controls electronic and optical properties. However, well‐known Anderson's model usually fails predict bulk HJ systems due presence of charge transfer at interfacial bonding. Atomically thin 2D transition metal dichalcogenide materials have attracted much attention recently since ultrathin HJs devices can be easily built they are promising for future electronics. The vertical based...
Excitons in monolayer semiconductors have a large optical transition dipole for strong coupling with light. Interlayer excitons heterobilayers feature electric that enables an field and exciton-exciton interaction at the cost of small dipole. We demonstrate ability to create new class hetero- homobilayers combines advantages interlayer excitons, i.e., featuring both dipoles. These consist electron confined individual layer, hole extended layers, where carrier-species-dependent layer...
Excitons, bound electron–hole pairs in a 2D plane, dominate the optical properties of monolayer transition metal dichalcogenides (TMDs). A large exciton binding energy on order 0.5 eV was theoretically predicted and experimentally determined recently. These ultrastable excitons thus open an avenue to explore physics such as Bose–Einstein condensation superfluidity at room temperature (Kasprzak et al 2006 Nature 443 409; Plumhof 2014 Nat. Mater. 13 247; Fogler Commun. 5 4555; Jiang John Sci....
A moiré superlattice formed in twisted van der Waals bilayers has emerged as a new tuning knob for creating electronic states two-dimensional materials. Excitonic properties can also be altered drastically due to the presence of potential. However, quantifying potential excitons is nontrivial. By large ensemble MoSe2/MoS2 heterobilayers with systematic variation twist angles, we map out minibands interlayer and intralayer function from which determine excitons. Surprisingly, depth up ∼130...
Transition metal dichalcogenide (TMD) heterobilayers have emerged as a promising platform for exploring solid-state quantum simulators and many-body phenomena. Their type II band alignment, combined with the moiré superlattice, inevitably leads to nontrivial exciton interactions dynamics. Here, we unveil distinct Auger annihilation processes delocalized interlayer excitons in WS2/WSe2 heterobilayers. By fitting characteristic efficiency droop bimolecular recombination rate, quantitatively...
We demonstrate a photoinduced write-once read-many-times (WORM) organic memory device based on DNA biopolymer nanocomposite. The consists of single layer sandwiched between electrodes, in which electrical bistability is activated by situ formation silver nanoparticles embedded upon light irradiation. exhibits switching effect to high conductivity above threshold 2.6 V and good retention property. This facile technique, taking advantage DNA’s affinity for metals solution processing, can...
AI-edge devices demand high-precision computation (e.g. FP16 and BF16) for accurate inference in practical applications, while maintaining high energy efficiency (EF) low standby power to prolong battery life. Thus, advanced non-volatile processors [1, 2] require compute-in-memory (nvCIM) [3–5] with a large on-chip memory, store all of the neural network's parameters (weight data) during power-off, high-EF multiply-and-accumulate (MAC) operations compute, maximize Among nvCIMs, ReRAM-nvCIM...
Purpose: The management of lower gastrointestinal bleeding (LGIB) varies between institutions. Mesenteric embolization, first introduced in 1965, is less invasive than surgery, has more significant localization colonoscopy, and thus become a standard mode minimally treatment for patients with LGIB. Early catheter design initial embolic materials, including autologous clot gelatin sponge, were limited by high rates bowel ischemia. Still, the development microcatheter technology...