A5088218869- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- ZnO doping and properties
- Photocathodes and Microchannel Plates
- Semiconductor materials and devices
- Pulsed Power Technology Applications
- Gyrotron and Vacuum Electronics Research
- Silicon Nanostructures and Photoluminescence
- Ga2O3 and related materials
- Terahertz technology and applications
- Laser Design and Applications
- Advanced Semiconductor Detectors and Materials
- Silicon and Solar Cell Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Photocatalysis Techniques
- Electrostatic Discharge in Electronics
- Advancements in Semiconductor Devices and Circuit Design
- MXene and MAX Phase Materials
- Magnetic properties of thin films
- Photonic and Optical Devices
- Metal and Thin Film Mechanics
- Surface and Thin Film Phenomena
- Spectroscopy and Laser Applications
- Solid-state spectroscopy and crystallography
National Research Tomsk State University
2014-2024
Polyus Research Institute of M.F.Stelmakh (Russia)
2013
The results of theoretical and experimental investigation charge carrier transport in avalanche S-diodes based on <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> <tex-math notation="LaTeX">$\pi $ </tex-math></inline-formula> - notation="LaTeX">$\nu -n structures are presented. High-ohmic layers the diodes were made by diffusion deep chromium iron acceptors into n-GaAs. It is shown that recharge regime should lead to expansion space...
Abstract The results of experimental investigation forward current‐voltage characteristics InGaN/GaN multiple quantum well light‐emitting diodes are presented. A new model for explaining the complex current dependence on voltage is proposed. based assumption space charge limited current, and ballistic overflow electrons through region. It shown that captured in shallow traps while transferring active measurements indicate activation energy decreases with a temperature decrease, which...
The article is concerned with a detailed switching delay effect exhibited by avalanche S-diodes-superfast GaAs closing switches doped deep Fe centers. current and voltage time dependences are simulated in simplified generator. dynamic electric field charge profiles the structures calculated. This describes an impact that capture cross sections of free carriers have on delayed switching. simulation results show associated center recharging double injection mode due to three different...
ABSTRACT The TiO 2 thin films have been deposited onto Si epi‐layer‐covered substrates by magnetron sputtering of a target. influence thermal annealing conditions on the photoelectrical characteristics –n‐Si structures has studied. photoresistive effect is observed for annealed in Ar at T = 500°C and 750ºC. © 2016 Wiley Periodicals, Inc. Microwave Opt Technol Lett 58:1113–1116,
In this paper the results of experiments on terahertz generation from nitride light‐emitting diode heterostructures under two‐photon excitation by femtosecond laser pulses are reported. Dependencies photoluminescence and spectra structural properties samples intensity have been studied. It was found that pulse amplitude increases its spectrum shifts towards higher frequencies with an increasing number quantum wells in heterostructures. Photoluminescence spectral shape change at high...
The article reports investigations into the microplasma breakdown in GaAs‐based avalanche S ‐diodes doped with deep Fe acceptor impurities. experiment shows effect of current limitation a reverse I–V curve “soft” breakdown. It proposes 2D single models and calculates curves diodes impurity during By comparing experimental calculation data, authors propose an explanation for is associated capture holes at negatively charged centers, which enhances depletion region minimizes maximum electric...
The analysis of efficiency droop in InGaN/GaN light-emitting diodes for electrical and optical pumping conditions is presented. Authors show that room temperature well described by ABC-model both regimes. For low temperatures additional ballistic leakage should be considered to explain the case pumping.
Abstract The built-in electric field in an InGaN quantum well and emission wavelength are numerically evaluated at various GaN barrier thicknesses blue InGaN/GaN/Al 2 O 3 LED structures. effect of thickness on the internal efficiency these structures was studied experimentally by temperature- excitation-power-dependent photoluminescence measurements. In with 3-nm-thick barriers active region high excitation levels higher than that thicker barriers. results measurements indicate barriers,...