A5067382509- Semiconductor materials and devices
- Semiconductor Quantum Structures and Devices
- Advancements in Semiconductor Devices and Circuit Design
- Ga2O3 and related materials
- Advanced Semiconductor Detectors and Materials
- GaN-based semiconductor devices and materials
- ZnO doping and properties
- Integrated Circuits and Semiconductor Failure Analysis
- Advanced Photocatalysis Techniques
- Electronic and Structural Properties of Oxides
- Radiation Detection and Scintillator Technologies
- Advanced X-ray and CT Imaging
- Chalcogenide Semiconductor Thin Films
- Metal and Thin Film Mechanics
- Semiconductor materials and interfaces
- Silicon Carbide Semiconductor Technologies
- Thin-Film Transistor Technologies
- Electrostatic Discharge in Electronics
- Education and Technology Integration
- Quantum Dots Synthesis And Properties
- High-pressure geophysics and materials
- Silicon Nanostructures and Photoluminescence
- Neuroscience and Neural Engineering
- Transition Metal Oxide Nanomaterials
- Solidification and crystal growth phenomena
University of Parma
2014-2025
Institute of Materials for Electronics and Magnetism
2006-2017
Istituto Nazionale per la Fisica della Materia
2001-2003
University of Padua
1997-2002
Institut d'électronique de microélectronique et de nanotechnologie
2002
Short-term accelerated life test activity on high brightness light emitting diodes is reported. Two families of 1-W light-emitting (LEDs) from different manufacturers were submitted to distinct stress conditions: temperature storage without bias and dc current test. During aging, degradation mechanisms like output decay electrical property worsening detected. In particular, the in efficiency induced by thermal was found follow an exponential law, activation energy process extrapolated. Aged...
Orthorhombic gallium oxide (κ-Ga2O3) is an ultra-wide bandgap semiconductor with great potential in new generation electronics. Its application hindered at present by the limited physical understanding of relationship between synthesis and functional properties. This work discusses effects growth method (metal-organic vapour phase epitaxy molecular beam epitaxy) as well annealing treatments different atmospheres (O2, H2) on point defects κ-Ga2O3 layers epitaxially grown c-plane sapphire....
This work describes an experiment on degradation mechanisms of InGaN light-emitting diode (LED) test structures which do not fulfill the requirements longlife products. We present a combined capacitance-voltage (C-V), deep level transient spectroscopy (DLTS), electroluminescence (EL), and cathodoluminescence (CL) study short-term instabilities InGaN∕GaN LEDs submitted to low current aging tests at room temperature. In early stages tests, EL CL characterizations showed optical power decrease,...
The quality of a CdZnTe-based X-ray detector is highly related to the interface between semiconductor and metal contact. One factors that increase leakage currents in CdZnTe based detectors presence conductive surface layer. In this paper result passivation by means an aqueous solution NH <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">4</sub> F/H xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> O studied optical ellipsometry current-voltage...
This paper reports an electro-optical analysis of the correlation between reverse-bias leakage current and luminescence in light-emitting diodes based on InGaN. The results suggest that (i) main mechanism responsible for conduction is tunneling, (ii) correlated with presence luminescence, (iii) flows through preferential paths, can be identified by means emission microscopy, (iv) could ascribed to recombination electron-hole pairs quantum well region.
The optical properties of blue InGaN-based light-emitting diodes aged at high current levels have been studied by electroluminescence and cathodoluminescence. onset a broad band peaked about 3.1 eV in devices without heat sink (junction temperature higher than 300 °C) has correlated to an electrothermal threshold effect. is attributed the dissociation Mg–H complexes inside p-type layers consequent formation Mg-related metastable acting as acceptors. Subsequent electron-beam irradiation...
Two-inch-diameter CdZnTe crystals doped with indium were grown by the boron oxide encapsulated vertical Bridgman technique. The showed large single crystalline yield and low etch pit density. background impurity content was dominated in concentration lower than 1 ppm. High resistivity obtained a procedure for contact preparation developed. mobility-lifetime product of material determined both X-ray irradiation photocurrent spectroscopy. detector prepared this good spectroscopic performance.
CdZnTe crystals were grown by the vertical Bridgman method in closed quartz ampoules. The crystalline quality and impurity content of these studied. Several X-ray detectors cut out crystals. resistivity, emission spectra, μτ product, spectroscopic characteristics extensively measured compared with obtained from boron oxide encapsulated technique. prepared without show good value, resolution, higher reproducibility. influence growth on detector response was discussed.
We present a new 3D surface-enhanced Raman spectroscopy substrate made of branched gold nanoparticles supported on ZnO tetrapods that was proved to be effective in different biomedical application such as drug detection and cancer cells analysis.
Semiconductor photodetectors can work only in specific material-dependent light wavelength ranges, connected with the bandgaps and absorption capabilities of utilized semiconductors. This limitation has driven development hybrid devices that exceed individual materials. In this study, for first time, a heterojunction photodetector based on methylammonium lead bromide (MAPbBr
Electrical contacts are of the greatest importance as they decisively contribute to overall performance photoresistors. Undoped κ-Ga2O3 is an ideal material for photoresistors with high in UV-C spectral region thanks its intrinsic solar blindness and extremely low dark current. The quality assessment contact/κ-Ga2O3 interface therefore paramount importance. transfer length method not applicable undoped Ga2O3 because several metals shows a non-ohmic character, non-equivalent contact...
The “photo‐gain effect” amplifying the DC photocurrent of κ‐Ga 2 O 3 UV‐C photoresistors is analyzed by means 2D numerical simulations and linked to capture photogenerated holes deep donor levels, probably associated with oxygen vacancies. resulting ionization donors leads an increase in electron density, hence enhanced conductivity under illumination.
Antimony selenide (Sb2Se3) is an Earth-abundant and non-toxic material that stands out as a promising absorber for the fabrication of thin film solar cells. Despite significant advancements in recent years, all devices reported literature exhibit open-circuit voltages well below theoretical value. Identifying factors contributing to this low voltage essential step increasing efficiency beyond recently attained 10% milestone moving closer limit. In paper, we present results in-depth analysis...
This paper reports an extensive investigation of the luminescence processes in GaN-based gate injection transistors (GITs). The results analysis indicate that: (i) GITs operating on-state conditions can emit a weak signal; (ii) for moderate voltage levels, is originated at edge toward drain side, due to hot electrons accelerated by high gate-drain electric field; (iii) higher region between and source devices, recombination holes injected from present channel. Results obtained means...
In 1932 Hecht obtained his famous equation concerning the charge induced on plates of a planar radiation detector in presence uniform electric field. It is well known that many cases, due to non-ohmic contacts or, any case, spatial charge, internal field no longer constant, so this formula could lead wrong conclusions. article authors examine common case an decreasing linearly along thickness. This very interesting because shape fairly widespread diffused and functional dependence collected...
The carrier transport phenomena occurring in pseudomorphic AlGaAs/InGaAs HEMTs biased the on-state impact-ionization regime is analyzed this paper. We confirm presence, electroluminescence spectra of HEMTs, a dominant contribution due to electron-hole recombination and we identify composite peak cold carriers. analyze using high-resolution monochromator, which reveals fine structure transitions between electron hole subbands channel quantum well, thus providing useful data concerning...