A5010787716- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Graphene research and applications
- Thermal properties of materials
- Diamond and Carbon-based Materials Research
- Perovskite Materials and Applications
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Ferroelectric and Negative Capacitance Devices
- Plasmonic and Surface Plasmon Research
- Advanced Sensor and Energy Harvesting Materials
National Taiwan Normal University
2022-2023
National Tsing Hua University
2018
Controlling the density of exciton and trion quasiparticles in monolayer two-dimensional (2D) materials at room temperature by nondestructive techniques is highly desired for development future optoelectronic devices. Here, effects different orbital angular momentum (OAM) lights on tungsten disulfide both low temperatures are investigated, which reveal simultaneously enhanced intensity suppressed photoluminescence spectra with increasing topological charge OAM light. In addition,...
Displacement in the Raman shift of conventional spectroscopy usually includes an increase number material layers or a strain variation. To distinguish them, polarization-resolved provides additional degree freedom to resolve it. In this work, strained graphene induced by different substrates on G band and 2D phonon modes is studied verified numerical analysis using tensors optical Jones calculus. For case, polarization properties scattered light are obviously from that case unstrained...
Due to its atomic thickness and insulating nature, hexagonal boron nitride (h-BN) is considered be one of the most promising substrates gate materials for two-dimensional electronic devices. In this study, polarized Raman spectroscopy was employed uncover effects incident light on optical properties h-BN phonon modes. Our measured polarization-resolved spectra indicate that symmetrical nature broken symmetry degenerate modes from are induced by linearly elliptically light, respectively....
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring switching natural 3R crystals is difficult due to lack co-existing stacking domains. Here, we present that MoS2 homoepitaxial patterns with polytypic domains can manifest switchable at room-temperature. Based on the diffusion limited aggregation theory, such are formed under low Mo chemical...