A5071859053- Semiconductor materials and devices
- Semiconductor materials and interfaces
- Silicon and Solar Cell Technologies
- Advancements in Semiconductor Devices and Circuit Design
- Thin-Film Transistor Technologies
- Integrated Circuits and Semiconductor Failure Analysis
- Silicon Nanostructures and Photoluminescence
- 2D Materials and Applications
- Advanced Memory and Neural Computing
- Catalytic Processes in Materials Science
- Intermetallics and Advanced Alloy Properties
- Silicon Carbide Semiconductor Technologies
- Electronic and Structural Properties of Oxides
- Ferroelectric and Negative Capacitance Devices
- Analytical chemistry methods development
- Optical Coatings and Gratings
- Advanced biosensing and bioanalysis techniques
- Advanced Thermoelectric Materials and Devices
- Chalcogenide Semiconductor Thin Films
- Peptidase Inhibition and Analysis
- Advanced Sensor and Energy Harvesting Materials
- Aluminum Alloys Composites Properties
- GaN-based semiconductor devices and materials
- Thermal properties of materials
National Taiwan University
2023
National Taiwan Normal University
2020-2022
The University of Texas at Austin
1985-2003
We have developed a technique for the fabrication of shallow, silicided n+−p and p+−n junctions with good electrical characteristics. The utilizes ion implantation dopants into silicide layers previously formed by ion-beam mixing Si ions low-temperature annealing, subsequent drive-in implanted substrate to form shallow junctions. This can be applied metal-oxide-semiconductor field-effect transistor in self-aligned fashion significant impact on complementary devices.
Matrix metalloproteinase-1 (MMP-1) is associated with lung cancer, and thus the monitoring of concentration this protein may useful for assessing cancer progression. In work, poly(triphenylamine rhodanine-3-acetic acid-co-3,4-ethoxylene dioxy thiophene)s were incorporated onto a continuous monolayer (cML) molybdenum disulfide (MoS2) by peptide-imprinted electropolymerization, in which peptides MMP-1 used as template epitope-imprinting. The morphology MoS2 thin film was monitored using...
High quality thin silicon epitaxial films have been grown on heavily doped p+ substrates using rapid thermal processing chemical vapor deposition with superior thickness and dopant profile control. The growth kinetics studied by examining the dependence of rate temperature, volume percentage SiH2Cl2, total gas flow rate. Submicron layers hyperabrupt transition (<200 Å/decade) excellent crystalline perfection low defect density obtained.
The electrical properties of thin nitrided oxide (∼100 Å) formed by rapid thermal nitridation (RTN) in pure NH3 have been studied. It is found that the current-voltage characteristic RTN oxides follows a Fowler–Nordheim tunneling behavior with modifications caused electron trapping processes at surface and interface. density dependent on conditions. At interface, both fixed charge (Nf) interface state (Dit) densities exhibit turnaround phenomena when process proceeds. maximum values Nf Dit...
Shallow silicided p+/n junctions have been formed by implanting boron ions into titanium disilicide layers and the subsequent drive-in of implanted Si substrate rapid thermal annealing (RTA). Results diffusion in layer, its segregation at both silicide/Si oxide/silicide interfaces, junction quality are presented. The precipitation SiO2/TiSi2 interface is identified for first time form B2O3. diodes short-channel metal-oxide-semiconductor field-effect transistors with good electrical...
The formation of the TiNxOy/TiSi2 bilayer on Si by rapid thermal nitridation titanium silicide in NH3 has been studied. chemical stability dilute HF and effectiveness TiNxOy TiSi2 as a diffusion barrier for Al are discussed. results show that this good at least 60 s Al/TiNxOy/TiSi2/Si is thermally stable up to 500 °C 30 min sintering.
The uniformity of Ti silicide resistance has been greatly improved by using an ion-beam mixing technique. integrity both MOS capacitors and p-n junction diodes improved. N-channel field-effect transistors fabricated with this technique show better electrical characteristics, less electron trapping in the gate oxide, hot-carrier than devices made without use mixing.< <ETX xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">></ETX>
Abstract Extensive effort is dedicated to developing 2D materials as an alternative Si‐based semiconductor technology. As the size decreases, heat dissipation at various interfaces becomes increasingly important in controlling device performance. On other hand, high interfacial thermal resistances can be applied for thermoelectric devices or insulators by achieving ultralow conductivity via nanostructuring. Here, it found that a) and electrical conductance of Au/MoS 2 monolayer interface...
In this paper we have developed a SALICIDE process for CMOS applications using ion beam mixing silicide formation and doped in conjunction with RTA drive‐in shallow silicided junction formation, investigated the fundamental issues related to process. Specifically, studied (i) effects of on properties Ti interaction between ; (ii) self‐aligned phase transformation; (iii) mechanism impurity redistribution segregation, during drive‐in; (iv) performances reliability fabricated devices. Results...
One of the most important issues in self-aligned silicide technology has been lateral formation over sidewall oxide spacers. In this work, growth considerably suppressed by use ion beam mixing and rapid thermal annealing. Metal-oxide-semiconductor transistors fabricated using show good electrical characteristics with negligible conduction between gate source/drain electrodes.
Rapid thermal processing chemical vapor deposition was employed for selective epitaxial growth of silicon. Defect-free islands were grown into oxide windows with 〈110〉 sidewall orientation on (100) silicon substrates. The effects temperature the degree faceting have been studied. hydrogen prebake temperatures as low 1000 °C proven to be sufficient high quality Si without undercutting.
The formations of TiNx0y/TiSi2 bilayer on Si by rapid thermal nitridation titanium silicide in NH3 as well p+/n shallow junction using doped technique have been studied. Results the chemical stability TiNx0v/TiSi7/Si dilute HF, effectiveness TiNx0, TiSi2 a diffusion barrier Mr Al boron Si02/TiSi,2/Si structure, surface dopant concentration at TiSi7/Si interface, and quality are presented. It is found that has good HF for 60 sec acts an effeentive contact between substrate up to 500°C, 30...
In this letter, rapid thermal processing chemical vapor deposition has been used to grow high quality in situ doped silicon epitaxial layers. Device epilayers have obtained for both boron and phosphorus doping with abrupt dopant transition profiles. The mobility values of these are very close the bulk under same concentration.
Device reliability is an important issue for the introduction of a new process technique. In this paper, our experimental findings regarding performance and stability devices fabricated by rapid thermal processing (RTP) are presented. Test structures study include p-n junction diode, metal-oxide-semiconductor (MOS) capacitor, n-channel MOS field-effect-transistor (MOSFET). The integrity found to be wellpreserved RTP. Charge trapping in gate oxide capacitor highly dependent on RTP temperature...
Rapid thermal chemical vapor deposition (RTCVD) of in-situ doped N and P-type thin single crystal silicon layers has been accomplished in a cold wall environment. Dichlorosilane, SiH2C12, is used for the source, B2H6 AsH3 dopant sources. Special attention paid to minimize oxygen carbon contamination surface prior deposition. As result process optimization, total budget RTCVD reduced, junction abruptness enhanced, movement minimized process-induced defects grown layer are remarkably reduced....
The authors have developed a salicide process for CMOS (complementary metal-oxide-semiconductor) applications using ion beam mixing silicide formation and doped in conjunction with RTA (rapid thermal annealing) drive-in shallow silicided junction investigated the fundamental issues related to this process. Specifically, they studied (i) effects of ion-beam on properties Ti interaction between SiO/sub 2/; (ii) self-aligned TiN/sub x/O/sub y//TiSi/sub 2/ phase transformation (iii) mechanism...
The discovery of interfacial ferroelectricity in two-dimensional rhombohedral (3R)-stacked semiconductors opens up a new pathway for achieving ultrathin computing-in-memory devices. However, exploring switching natural 3R crystals is difficult due to lack co-existing stacking domains. Here, we present that MoS2 homoepitaxial patterns with polytypic domains can manifest switchable at room-temperature. Based on the diffusion limited aggregation theory, such are formed under low Mo chemical...