A5100371311- Carbon Nanotubes in Composites
- Graphene research and applications
- Nanowire Synthesis and Applications
- Mechanical and Optical Resonators
- Synthesis and Properties of Aromatic Compounds
- Photonic and Optical Devices
- Advancements in Semiconductor Devices and Circuit Design
- Advancements in Battery Materials
- Air Quality and Health Impacts
- Advanced Battery Materials and Technologies
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Musculoskeletal pain and rehabilitation
- Quantum Dots Synthesis And Properties
- Geoscience and Mining Technology
- Semiconductor materials and devices
- 2D Materials and Applications
- Supramolecular Self-Assembly in Materials
- Diamond and Carbon-based Materials Research
- Geomechanics and Mining Engineering
- Plasmonic and Surface Plasmon Research
- Ergonomics and Musculoskeletal Disorders
- Chalcogenide Semiconductor Thin Films
- Electromagnetic wave absorption materials
- Nuclear Physics and Applications
Peking University
2016-2025
Shanghai University
2020-2025
Beijing National Laboratory for Molecular Sciences
2006-2025
Soochow University
2011-2025
Wenzhou Vocational College of Science and Technology
2024
State Key Laboratory of Pollution Control and Resource Reuse
2023-2024
State Key Laboratory of Clean and Efficient Coal-Fired Power Generation and Pollution Control
2023-2024
China Energy Science and Technology Research Institute Co., Ltd. (China)
2024
Ningbo Entry-Exit Inspection And Quarantine Bureau
2024
University of Science and Technology of China
2019-2024
We have fabricated ballistic n-type carbon nanotube (CNT)-based field-effect transistors (FETs) by contacting semiconducting single wall CNTs using Sc. Together with the demonstrated p-type CNT FETs Pd contacts, our work closes gap for doping-free fabrication of CNT-based complementary metal-oxide semiconductor (CMOS) devices and circuits. feasibility this CMOS technology fabricating a simple inverter on SiO2/Si substrate back-gate geometry, but in principle much more complicated circuits...
Carbon nanotubes (CNTs) are quasi-one-dimensional materials with unique properties and ideal for applications in electronic devices. Significant progress has been made on CNT electronics, a doping-free approach emerged from this research. This utilizes the contact control of field-effect transistors (FETs), preserving perfect lattice making it possible FETs to outperform state-of-the-art Si Both n-type p-type near ballistic performance limits have fabricated, symmetric CMOS devices...
The variation of the in situ stress state is closely related to various factors. In also an important indicator guide mining production. study measurement and its distribution characteristics has always been a basic very work mine this study, deep mines Linyi Mining Area were considered as research object. regard, law each was studied. We found that relationship between principal stresses σ H > v h , which belongs strike‐slip regime. regime, lateral Earth pressure coefficient greater than...
Abstract The first example of luminescent monosubstituted polyacetylenes (mono‐PAs) is presented, based on a contracted cis‐cisoid polyene backbone. It has an excellent circularly polarized luminescence (CPL) performance with high dissymmetric factor (up to the order 10 −1 ). stems from helical PA backbone, which tightly fixed by strong intramolecular hydrogen bonds, thereby reversing energy excited states and enabling emissive dissipation. CPL switches are facilely achieved solvent...
We report the observation of a novel phenomenon, self-retracting motion graphite, in which tiny flakes after being displaced to various suspended positions from islands highly orientated pyrolytic retract back onto under no external influences. Reports this phenomenon have not been found literature for single crystals any kind. Models that include van der Waals force, electrostatic and shear strengths were considered explain observed phenomenon. These findings may conduce create...
Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that significant reduction in the use of field-effect can achieved by constructing nanotube-based pass-transistor logic configuration, rather complementary metal-oxide semiconductor configuration. Logic gates constructed individual via doping-free...
Near ballistic n-type single-walled carbon nanotube field-effect transistors (SWCNT FETs) have been fabricated with a novel self-aligned gate structure and channel length of about 120 nm on SWCNT diameter 1.5 nm. The device shows excellent on- off-state performance, including high transconductance up to 25 microS, small subthreshold swing 100 mV/dec, delay time 0.86 ps, suggesting that the can potentially work at THz regime. Quantitative analysis electrical characteristics long same reveals...
While it has been shown that scandium (Sc) can be used for making high-quality Ohmic contact to the conduction band of a carbon nanotube (CNT) and thus fabricating high-performance n-type CNT field effect transistors (FETs), cost metal Sc is currently five times more expensive than gold one thousand yttrium (Y) which in many ways resembles Sc. In this Letter we show near perfect contacts fabricated on single-walled CNTs (SWCNTs) using Y, Y-contacted FETs outperform Sc-contacted important...
High-quality yttrium oxide (Y(2)O(3)) is investigated as an ideal high-kappa gate dielectric for carbon-based electronics through a simple and cheap process. Utilizing the excellent wetting behavior of on sp(2) carbon framework, ultrathin (about few nm) uniform Y(2)O(3) layers have been directly grown surfaces nanotube (CNT) graphene without using noncovalent functionalization or introducing large structural distortion damage. A top-gate CNT field-effect transistor (FET) adopting 5 nm layer...
A rapid one-pot microwave-assisted strategy toward the synchronous preparation of two nano-biomaterials with different scales: lignin nanoparticles and carbon nanodots.
A high-quality Y2O3 dielectric layer has been grown directly on graphene and used to fabricated top-gate field-effect transistors (FETs), the thickness of reduced continuously down 3.9 nm with an equivalent oxide (EOT) 1.5 excellent insulativity. By measuring CV characteristics two FETs different gate thicknesses, capacitance quantum are retrieved from experimental data without introducing any additional fitting process parameters, yielding a relative constant κ = 10 for about 2.28 μF/cm2....
A high-performance top-gate graphene field-effect transistor (G-FET) is fabricated, and used for constructing a high efficient frequency doubler. Taking the advantages of gate efficiency low parasitic capacitance device geometry, gain doubler increased about ten times compared to that back-gate G-FET based device. The response also pushed from 10 kHz 200 kHz, at which most output power concentrated doubled fundamental 400 kHz.
We propose that a photodetector based on nanotubes formed from layered structure may have faster response than nanowires or nanobelts. The compound tungsten disulfide (WS2) can absorb visible and near-infrared lights. fabricated photodetectors individual WS2 nanotubes. exhibited remarkable to excitation with 633 785 nm light. nanotube-based short rise decay times of few hundred μs, high on/off ratio, spectral responsivity external quantum efficiency. Our results imply are prospective...
Highly purified carbon nanotube cascading IR detectors are constructed, in which virtual contacts used to multiply photovoltage and improve the signal-to-noise ratio. It exhibits a broadband response, high room temperature detectivity of 2.91 × 1011 Jones, extremely good temporal stability large scale fabrication potential 150 photodetector array with random test yield 100%. As service our authors readers, this journal provides supporting information supplied by authors. Such materials peer...
Abstract Allostery can regulate protein self‐assembly which further affects biological activities, and achieving precise control over the chiral suprastructures during remains challenging. Herein, to mimic allosterical nature of proteins, poly(phenylacetylene) block copolymers PPA‐ b ‐PsmNap with dynamic helical backbone were synthesized investigate their conformational‐transition‐induced self‐assembly. As conformation PsmNap spontaneously transforms from cis‐transiod cis‐cisoid , decreasing...
Abstract Chiral recognition is of importance not only in living systems but also estimating the optical purity enantiomeric drugs and fabricating advanced materials. Herein we report a novel self‐reporting activated ester‐amine reaction that can provide multi‐channel visual detection organic amines. It relies on extent dependent cis‐transoid to cis‐cisoid helical transition polyphenylacetylene backbone thus triggered fluorescence. Owing high selectivity, this process recognize structurally...
Intelligent materials with adaptive response to external stimulation lay foundation integrate functional systems at the material level. Here, experimental observation and numerical simulation, we report a delicate nano-electro-mechanical-opto-system naturally embedded in individual multiwall tungsten disulfide nanotubes, which generates distinct form of in-plane van der Waals sliding ferroelectricity from unique combination superlubricity piezoelectricity. The enables programmable...
Two-dimensional (2D) chiral materials have been attracting immense attentions owing to their unique properties. Herein, we successfully developed a assembly strategy of amphiphilic homopolymers construct stable free-standing 2D nanosheets in solution. The poly(phenylacetylene) (PPA) bearing the hydrophobic and hydrophilic dendritic side chains adopt DNA-like double-helical conformation. regular hexagonal were formed THF/EtOH through nucleation epitaxial growth. sizes can be modulated from...
Due to its remarkable electrical and optical capabilities, optoelectronic devices based on the semiconducting single-walled carbon nanotube (s-SWCNT) have been studied extensively in last two decades. First, s-SWCNT is a direct bandgap semiconductor with high infrared absorption coefficient electron/hole mobility. In addition, as typical one-dimensional material, there no lattice mismatch between any substrates. Another advantage that of can be processed at low temperatures. has intriguing...
Flexible light-emitting diodes utilizing environmentally friendly cadmium (Cd)-free quantum dots (QDs) hold immense potential for next-generation wearable integrated displays. However, their overall performance lags behind Cd-based counterparts, and less research focuses on the suitability of QD layers in flexible devices. Herein, it is observed that traditional surface oleate ligands QDs readily detach under device operation after cycling bending, leading to increased defects accumulated...
Two-junction-nanowire arrays (SnO2 capped ZnO nanowire on Zn substrate) are synthesized using a two-step-solution-reaction. The bare single crystalline nanowires give reasonably intense band edge luminescence but also strong green emission likely due to surface defects. SnO2 capping treatment not only introduces caps the tip of partially passivates surfaces, leading improved near and suppression defect luminescence. array configuration allows straight forward electrical measurement junction...
Symmetric n- and p-type field-effect transistors (FETs) have been fabricated on the same undoped single-walled carbon nanotube (SWCNT). The polarity of FET is defined by controlled injection electrons (n-type, via Sc electrodes) or holes (p-type, Pd into SWCNT, instead chemically doping SWCNT. SWCNT-based FETs with different channel lengths show a clear trend performance improvement for length scaling. Taking full advantage perfect symmetric band structure semiconductor CMOS inverter...