A5052439811- Photonic and Optical Devices
- Photonic Crystals and Applications
- Advanced Photonic Communication Systems
- Optical Network Technologies
- Semiconductor Lasers and Optical Devices
- Advanced Fiber Laser Technologies
- Advanced Fiber Optic Sensors
- Plasmonic and Surface Plasmon Research
- Semiconductor Quantum Structures and Devices
- Silicon Nanostructures and Photoluminescence
- Optical Coatings and Gratings
- Neural Networks and Reservoir Computing
- Nanowire Synthesis and Applications
- Precipitation Measurement and Analysis
- Meteorological Phenomena and Simulations
- Metamaterials and Metasurfaces Applications
- Thin-Film Transistor Technologies
- Soil Moisture and Remote Sensing
- Climate variability and models
- Mechanical and Optical Resonators
- Groundwater flow and contamination studies
- Radio Frequency Integrated Circuit Design
- Hydraulic Fracturing and Reservoir Analysis
- Phase-change materials and chalcogenides
- Magneto-Optical Properties and Applications
Guangxi University
2019-2024
Shanghai Institute of Microsystem and Information Technology
2015-2024
Chinese Academy of Sciences
2014-2024
State Key Laboratory of Functional Materials for Informatics
2013-2024
University of Chinese Academy of Sciences
2020-2024
Academy of Opto-Electronics
2023
Purdue University West Lafayette
2012
Massachusetts Institute of Technology
1996-2009
University of Massachusetts Boston
2005
Shanghai Jiao Tong University
2003
Recombination processes in rare-earth metals semiconductors are a special case due to the localized nature of $f$ electrons. Our work explores detail radiative and nonradiative mechanisms energy transfer for erbium silicon by investigating temperature dependence intensity decay time photoluminescence Er-related centers Si. We show that back from excited Er $4f$ shell causes luminescence quenching below 200 K. study electroluminescence applying different bias conditions during decay. In...
Photonic methods of radio-frequency waveform generation and processing provide performance flexibility over electronic due to the ultrawide bandwidth offered by optical carriers. However, they suffer from lack integration slow reconfiguration speed. Here we propose an architecture integrated photonic RF processing, implement it on a silicon chip fabricated in semiconductor manufacturing foundry. Our device can generate programmable bursts or continuous waveforms with only light source,...
Submicrometer silicon photodiode waveguides, fabricated on silicon-on-insulator substrates, have photoresponse from <1270 to 1740 nm (0.8 AW <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">-1</sup> at 1550 nm) and a 3-dB bandwidth of 10 20 GHz. The p-i-n waveguide consists an intrinsic 500times250 where the optical mode is confined two thin, 50-nm-thick, doped Si wings that extend 5 mum out either side waveguide. wings, which are one p-type...
<a href="http://www.osa-jon.org/virtual_issue.cfm?vid=28">Feature Issue on Nanoscale Integrated Photonics for Optical Networks</a> The goal of the research program that we describe is to break emerging performance wall in microprocessor development arising from limited bandwidth and density on-chip interconnects chip-to-chip (processor-to-memory) electrical interfaces. Complementary metal-oxide semiconductor compatible photonic devices provide an infrastructure deployment a range integrated...
A broadband and fabrication-tolerant on-chip scalable mode-division multiplexing (MDM) scheme based on mode-evolution counter-tapered couplers is designed experimentally demonstrated a silicon-on-insulator (SOI) platform. Due to the advantage offered by mode evolution, two-mode MDM link exhibits very large, -1 dB bandwidth of >180 nm, which considerably larger than most previously reported links whether they are mode-interference or evolution. In addition, performance metrics remain stable...
We demonstrate 20nm thermo-optic tuning in silicon microring resonators with 16nm free spectral range (FSR), the largest reported full-FSR thermal tuning, a efficiency of 28μW/GHz, enabling telecom microphotonic tunable filters.
We present the design, fabrication, and measurement of a compact low-loss multimode interference (MMI) coupler based on silicon nanowire waveguide. The device is carefully designed to achieve both good performance size by using mode matching method. fabricated silicon-on-insulator (SOI) with 0.13-μm CMOS technology. By measuring MMI cascaded configuration, very low excess loss 0.06 dB at wavelength 1550 nm obtained. can also work well for wide band. footprint ~ 3.6 × 11.5 μm <sup...
Low-loss and low-crosstalk 8 × arrayed waveguide grating (AWG) routers based on silicon nanowire waveguides are reported. A comparative study of the measurement results 3.2 nm-channel-spacing AWGs with three different designs is performed to evaluate effect each optimal technique, showing that a comprehensive optimization technique more effective improve device performance than single optimization. Based design, we further design experimentally demonstrate new 8-channel 0.8 AWG router for...
A novel silicon-on-insulator (SOI) polarization splitter-rotator is proposed based on mode-evolution tapers and a mode-sorting asymmetric Y-junction. The are designed to adiabatically convert the input TM0 mode into TE1 mode, which will evolve TE0 in wide output arm while excites narrow arm. numerical simulation results show that conversion efficiency increases with lengths of Y-junction for waveguide widths large range. This device has < 0.4 dB insertion loss > 12 extinction ratio an...
A compact polarization splitter-rotator based on a silicon-on-insulator rib asymmetrical directional coupler with SiO2 top-cladding is proposed. Unlike previously reported PSRs which specifically required the material to be different from bottom cladding in order break symmetry of waveguide cross-section, our proposed PSR has no such limitation due horizontal asymmetry waveguide. In addition, device highly and total length as short 24 μm. Numerical simulation shows that high conversion...
A novel silicon-on-insulator (SOI) polarization splitter-rotator (PSR) with a large fabrication tolerance is proposed based on cascaded multimode interference (MMI) couplers and an assisted mode-evolution taper. The tapers are designed to adiabatically convert the input TM(0) mode into TE(1) mode, which will output as TE(0) after processed by subsequent MMI converter, 90-degree phase shifter (PS) 3 dB coupler. numerical simulation results show that device has < 0.5 insertion loss -17...
A broadband, Mach-Zehnder-interferometer based silicon optical modulator is demonstrated, with an electrical bandwidth of 26 GHz and V(pi)L 4 V.cm. The design this does not require epitaxial overgrowth therefore simpler to fabricate than previous devices similar performance.
CMOS compatible infrared waveguide Si photodiodes are made responsive from 1100 to 1750 nm by Si(+) implantation and annealing. This article compares diodes fabricated using two annealing temperatures, 300 475 degrees C. 0.25-mm-long annealed C have a response 1539 radiation of 0.1 A W-(-1) at reverse bias 5 V 1.2 W(-1) 20 V. 3-mm-long processed exhibited states, L1 L2, with photo responses 0.3 +/-0.1 0.7 +/-0.2 for the state 0.5 4 W(-1)-1 L2 state. The can be switched between L2. bandwidths...
We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC AC characteristics. A figure merit, static VpiL, as low 0.24Vmm is achieved. The effect carrier lifetime variation doping concentration explored found to be important the modulator
We report a phenomenon that an optical beam transmits in negative direction when passing through single array of high-refractive-index dielectric nanorods. The mechanism the directional transmission is believed to be due symmetry resonant modes nanoparticles. It expected find applications designing compact components achieve on-chip steering photonic circuits.
An electrically driven Mach-Zehnder waveguide modulator based on high-index contrast silicon split-ridge technology and electronic carrier injection is proposed. The excellent optical confinement possible in devices, together with good thermal heat sinking forward biased operation, enables high-speed modulation small signal bandwidths beyond 20 GHz, a V/sub /spl pi// times length figure of merit pi//L=0.5 V/spl middot/cm an insertion loss about 4 dB. can be fabricated complementary...
Low loss silicon waveguides are the key to realization of high performance photonic integrated circuits. In this paper, fabrication, characterization and analysis nanowaveguides presented. Silicon fabricated on silicon-on-insulator (SOI) wafers with 0.13 μm complementary metal-oxide-semiconductor (CMOS) technology. To reduce propagation loss, both photolithography etching processes optimized make waveguide sidewalls smooth. Propagation losses 2.4 ± 0.2 0.59 0.32 dB/cm obtained at 1550 nm...
We present the design, fabrication, and measurement of a high-speed carrier-depletion silicon optical modulator based on Mach–Zehnder Interferometer structure. Based an equivalent circuit model, traveling-wave electrode size doping concentration PN junction are optimized to achieve large modulation bandwidth. The efficiency loss at different positions also simulated. device is fabricated silicon-on-insulator (SOI) with 0.13 μm CMOS technology. An insertion 3.9 dB (resp. 6.2 dB) <formula...
Controlling an optical beam is fundamental in optics. Recently, unique manipulation of wavefronts has been successfully demonstrated by metasurfaces. However, these artificially engineered nanostructures have thus far limited to operate on light beams propagating out-of-plane. The in-plane operation critical for on-chip photonic applications. Here, we demonstrate anomalous negative-angle refraction a along the plane, designing thin dielectric array silicon nanoposts. circularly polarized...
The arbitrary ratio power splitter is widely used in photonic integrated circuits (PICs), for signal monitoring, equalization, feedback, and so on. Here we designed a fabrication-tolerant, compact, broadband, low-loss splitter. proposed was realized with an adiabatically tapered silicon rib waveguide 70 nm shallow etches <mml:math xmlns:mml="http://www.w3.org/1998/Math/MathML" display="inline"> <mml:mrow class="MJX-TeXAtom-ORD"> <mml:mi mathvariant="normal">S</mml:mi> </mml:mrow> <mml:msub>...
We propose a non-volatile 2 × photonic switch based on multimode interference in an Sb
We demonstrate a 3-dB power splitter optimized by an enhanced particle swarm optimization algorithm based on curved directional coupler, with set of silicon columns introduced into the coupling region. The proposed device exhibits compact size, low loss and wavelength dependence in O-band. employ to engineer dispersion designing radius automatically. demonstrated enabled silicon-on-insulator can achieve multiple performance metrics simultaneously according our simulation results, footprint...
DOI: 10.1049/ic:20070077 ISBN: 978-3-8007-3042-1 Location: Berlin, Germany Conference date: 16-20 Sept. 2007 Format: PDF We demonstrate the first tunable, high-order channel add-drop filters based on silicon microring resonators. They meet rigorous, telecom-grade spectral requirements for microphotonic R-OADMs (reconfigurable optical multiplexers). The design addresses 100 GHz-spaced, 40 GHz-wide channels over 16-32 nm. (2 pages) Inspec keywords: multiplexing equipment; elemental...
We propose a silicon-on-insulator (SOI) polarization diversity scheme in the mid-infrared wavelength range. In consideration of absorption loss silicon dioxide (SiO2), splitter-rotator (PSR) is designed and optimized with nitride (SiN) upper-cladding SiO2 lower-cladding. This asymmetry allows PSR, which consists mode-conversion tapers subsequent mode-sorting asymmetric Y-junctions, to be fabricated simple one-step etching process. Simulation shows that our PSR has good performance low mode...