Jason S. Orcutt

ORCID: 0000-0001-7131-1250
Publications
Citations
Views
---
Saved
---
About
Contact & Profiles
Research Areas
  • Photonic and Optical Devices
  • Optical Network Technologies
  • Semiconductor Lasers and Optical Devices
  • Advanced Photonic Communication Systems
  • Neural Networks and Reservoir Computing
  • Photonic Crystals and Applications
  • Spectroscopy and Laser Applications
  • Quantum Information and Cryptography
  • Quantum Computing Algorithms and Architecture
  • Advanced Fiber Laser Technologies
  • Quantum and electron transport phenomena
  • Silicon Nanostructures and Photoluminescence
  • Atmospheric Ozone and Climate
  • Advanced Fiber Optic Sensors
  • Optical Coatings and Gratings
  • Mechanical and Optical Resonators
  • Semiconductor Quantum Structures and Devices
  • Atmospheric and Environmental Gas Dynamics
  • Semiconductor materials and devices
  • Advanced Optical Sensing Technologies
  • Advancements in Semiconductor Devices and Circuit Design
  • Plasmonic and Surface Plasmon Research
  • Nanowire Synthesis and Applications
  • Advanced Optical Network Technologies
  • Thin-Film Transistor Technologies

IBM (United States)
2014-2024

IBM Research - Thomas J. Watson Research Center
2015-2024

Massachusetts Institute of Technology
2008-2017

Accurate conversion of wideband multi-GHz analog signals into the digital domain has long been a target analog-to-digital converter (ADC) developers, driven by applications in radar systems, software radio, medical imaging, and communication systems.Aperture jitter major bottleneck on way towards higher speeds better accuracy.Photonic ADCs, which perform sampling using ultra-stable optical pulse trains generated mode-locked lasers, have investigated for many years as promising approach to...

10.1364/oe.20.004454 article EN cc-by Optics Express 2012-02-08

This paper presents photonic devices with 3 dB/cm waveguide loss fabricated in an existing commercial electronic 45 nm SOI-CMOS foundry process. By utilizing front-end fabrication processes the are monolithically integrated electronics same physical device layer as transistors achieving 4 ps logic stage delay, without degradation transistor performance. We demonstrate 8-channel optical microring-resonator filter bank and modulators, both controlled by digital circuits. developing a design...

10.1364/oe.20.012222 article EN cc-by Optics Express 2012-05-15

Infrared tunable diode-laser absorption spectroscopy (IR-TDLAS) is an enabling technology for trace-gas detection, with applications ranging from air-quality monitoring to medical diagnostics. However, such sensors typically utilize discrete optical components that pose practical cost limits large-scale network deployments. Here, we leverage silicon photonics demonstrate IR-TDLAS on integrated CMOS-compatible platform methane (CH4) spectroscopy. Using near-IR (1650 nm) light a...

10.1364/optica.4.001322 article EN cc-by Optica 2017-10-26

We present a new monolithic silicon photonics technology suited for integration with standard bulk CMOS processes, which reduces costs and improves opto-electrical coupling compared to previous approaches. Our supports dense wavelength-division multiplexing dozens of wavelengths per waveguide. Simulation experimental results reveal an order magnitude better energy-efficiency than electrical links in the same generation. Exploiting key features our technology, we have developed...

10.1109/hoti.2008.11 article EN 2008-01-01

Silicon photonics is a promising technology for addressing memory bandwidth limitations in future many-core processors. This article first introduces new monolithic silicon-photonic technology, which uses standard bulk CMOS process to reduce costs and improve energy efficiency, then explores the logical physical implications of leveraging this processor-to-memory networks.

10.1109/mm.2009.60 article EN IEEE Micro 2009-07-01

<a href="http://www.osa-jon.org/virtual_issue.cfm?vid=28">Feature Issue on Nanoscale Integrated Photonics for Optical Networks</a> The goal of the research program that we describe is to break emerging performance wall in microprocessor development arising from limited bandwidth and density on-chip interconnects chip-to-chip (processor-to-memory) electrical interfaces. Complementary metal-oxide semiconductor compatible photonic devices provide an infrastructure deployment a range integrated...

10.1364/jon.6.000063 article EN Journal of Optical Networking 2007-01-01

We demonstrate a monolithic photonic integration platform that leverages the existing state-of-the-art CMOS foundry infrastructure.In our approach, proven XeF 2 post-processing technology and compliance with electronic process flows eliminate need for specialized substrates or wafer bonding.This approach enables intimate of large numbers nanophotonic devices alongside high-density, highperformance transistors at low initial incremental cost.We this by presenting grating-coupled,...

10.1364/oe.19.002335 article EN cc-by Optics Express 2011-01-24

The microring resonator is critical for dense wavelength division multiplexed (DWDM) chip-to-chip optical I/O, enabling modulation and channel selection at the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\upmu\text{m}$</tex-math></inline-formula> -scale suitable a VLSI chip. Microring-based links, however, require active tuning to counteract process thermo-optic variations. Here, we present...

10.1109/jssc.2016.2519390 article EN publisher-specific-oa IEEE Journal of Solid-State Circuits 2016-03-04

Silicon photonics promises to address the challenges for next-generation short-reach optical interconnects. Growing bandwidth demand in hyper-scale data centers and high-performance computing motivates development of faster more-efficient silicon links. While it is challenging raise serial line rate, further scaling rate can be realized by, example, increasing number parallel fibers, wavelengths per fiber, using multi-level pulse-amplitude modulation (PAM). Among these approaches, PAM has a...

10.1364/optica.3.001060 article EN cc-by Optica 2016-09-20

Just as classical information technology rests on a foundation built of interconnected information-processing systems, quantum (QIT) must do the same. A critical component such systems is interconnect, device or process that allows transfer between disparate physical media, for example, semiconductor electronics, individual atoms, light pulses in optical fiber, microwave fields. While interconnects have been well engineered decades realm technology, (QuICs) present special challenges, they...

10.1103/prxquantum.2.017002 article EN cc-by PRX Quantum 2021-02-24

Scaling the number of qubits while maintaining high-fidelity quantum gates remains a key challenge for computing. Presently, superconducting processors with &gt;50 are actively available. For these systems, fixed-frequency transmons attractive because their long coherence and noise immunity. However, scaling architectures proves challenging precise relative frequency requirements. Here, we use laser annealing to selectively tune transmon into desired patterns. Statistics over hundreds...

10.1126/sciadv.abi6690 article EN cc-by-nc Science Advances 2022-05-13

We present the design, fabrication, and measurement results of low-insertion-loss low-crosstalk broadband 2 × Mach-Zehnder switches for nanosecond-scale optical data routing applications. propose a simulation framework to calculate spectral characteristics use it design two switches: one based on directional couplers, other using two-section couplers broader bandwidth. show that driving switch in push-pull manner enables reduce insertion loss crosstalk at expense achieve good correlation...

10.1109/jlt.2015.2446463 article EN Journal of Lightwave Technology 2015-06-17

Silicon-photonics is an emerging technology that can overcome the tradeoffs faced by traditional electrical I/O. Due to ballooning development costs for advanced CMOS nodes, however, widespread adoption necessitates seamless photonics integration into mainstream processes, with as few process changes possible. In this work, we demonstrate a silicon-photonic link optical devices and electronics integrated on same chip in 0.18 µm bulk memory periphery process. To enable waveguides optics...

10.1109/jssc.2014.2382101 article EN publisher-specific-oa IEEE Journal of Solid-State Circuits 2015-01-19

As superconducting quantum circuits scale to larger sizes, the problem of frequency crowding proves a formidable task. Here we present solution for this in fixed-frequency qubit architectures. By systematically adjusting frequencies post-fabrication, show nearly ten-fold improvement precision setting frequencies. To assess scalability, identify types 'frequency collisions' that will impair transmon and cross-resonance gate architecture. Using statistical modeling, compute probability evading...

10.1038/s41534-021-00464-5 article EN cc-by npj Quantum Information 2021-08-19

A metamaterial interface between standard optical fibers and silicon waveguides was fabricated in a CMOS production facility shows −1.3dB peak efficiency with 0.8dB penalty over 100 nm bandwidth all polarizations.

10.1364/ofc.2015.th3f.3 article EN Optical Fiber Communication Conference 2015-01-01

We demonstrate the first (to best of our knowledge) depletion-mode carrier-plasma optical modulator fabricated in a standard advanced complementary metal-oxide-semiconductor (CMOS) logic process (45 nm node SOI CMOS) with no modifications. The zero-change CMOS photonics approach enables this device to be monolithically integrated into state-of-the-art microprocessors and electronics. Because these processes support lateral p-n junctions but not efficient ridge waveguides, we accommodate...

10.1364/ol.38.002657 article EN Optics Letters 2013-07-18

We present the design and characterization of a novel electro-optic silicon photonic 2×2 nested Mach-Zehnder switch monolithically integrated with CMOS driver interface logic. The device uses variable optical attenuator in order to balance power inside interferometer leading ultralow crosstalk performance. measured as low -34.5 dB, while achieving ∼2 dB insertion loss 4 ns transient response.

10.1364/ol.41.003002 article EN Optics Letters 2016-06-22

A novel post-processing fabrication technique, based on XeF <inf xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</inf> etching, has been developed to locally remove the silicon substrate beneath polysilicon waveguides, enabling integration of low-loss strong-confinement microphotonics into standard bulk-silicon CMOS process flows.

10.1109/cleo.2008.4551466 article EN Conference on Lasers and Electro-Optics 2008-05-01

We present a systematic study of Mach-Zehnder silicon optical modulators based on carrier-injection. Detailed comparisons between modeling and measurement results are made with good agreement obtained for both DC AC characteristics. A figure merit, static VpiL, as low 0.24Vmm is achieved. The effect carrier lifetime variation doping concentration explored found to be important the modulator

10.1364/oe.16.005218 article EN cc-by Optics Express 2008-04-01

We present simulation and experimental results on a silicon photonic strictly nonblocking 4 × electrooptic Mach- Zehnder-based switch fabric. propose framework based the transfer matrix approach that enables calculating transmission spectra of any type multistage interconnect network. The model is used to analyze spectral characteristics also show fabric designed fabricated in IBM's 90-nm photonics-enabled CMOS process. monolithically integrates logic, drivers, all photonics. fully...

10.1109/jlt.2015.2466571 article EN Journal of Lightwave Technology 2015-08-13

A manufacturable platform of CMOS, RF and opto-electronic devices fully PDK enabled to demonstrate a 4×25 Gb/s reference design is presented. With self-aligned fiber attach, this technology enables low-cost O-band data-com transceivers. In addition, can offer enhanced performance yield in hybrid-assembly for applications at 25 Gbaud beyond.

10.1109/iedm.2015.7409768 article EN 2021 IEEE International Electron Devices Meeting (IEDM) 2015-12-01

We demonstrate the first photonic chip designed in a commercial bulk CMOS process (65 nm node) using standard layers combined with scalable post-processing, enabling dense integration high-performance microprocessor electronics.

10.1109/cleo.2008.4551588 article EN Conference on Lasers and Electro-Optics 2008-05-01

A design methodology to layout photonic devices within standard electronic complementary metal-oxide-semiconductor (CMOS) foundry data preparation flows is described. This platform has enabled the fabrication of designs in three scaled-CMOS processes from two semiconductor manufacturers.

10.1109/lpt.2010.2041445 article EN IEEE Photonics Technology Letters 2010-02-11

We measure end-of-line polysilicon waveguide propagation losses of ~6-15 dB/cm across the telecommunication O-, E-, S-, C- and L-bands in a process representative high-volume product integration. The lowest loss 6.2 is measured at 1550 nm with 120 x 350 core geometry. reported characteristics are after thermal cycling full CMOS electronics that results 32% increase extracted material relative to as-crystallized samples. spectra fit an absorption model using defect state parameters identify...

10.1364/oe.20.007243 article EN cc-by Optics Express 2012-03-14
Coming Soon ...