A5063924011- Photonic and Optical Devices
- Semiconductor Lasers and Optical Devices
- Optical Network Technologies
- Advanced Fiber Laser Technologies
- Semiconductor Quantum Structures and Devices
- Advanced Photonic Communication Systems
- Thermal Radiation and Cooling Technologies
- Photonic Crystals and Applications
- Neural Networks and Reservoir Computing
- Advanced Thermoelectric Materials and Devices
- Spectroscopy and Laser Applications
- Advanced Thermodynamics and Statistical Mechanics
- Spectroscopy Techniques in Biomedical and Chemical Research
- Silicon Nanostructures and Photoluminescence
- Optical properties and cooling technologies in crystalline materials
- Thermal properties of materials
- Quantum Information and Cryptography
- Spectroscopy and Chemometric Analyses
- Magneto-Optical Properties and Applications
- Quantum optics and atomic interactions
- Viral Infectious Diseases and Gene Expression in Insects
- Advanced Optical Sensing Technologies
- Advanced Fluorescence Microscopy Techniques
- Microfluidic and Capillary Electrophoresis Applications
- Thin-Film Transistor Technologies
Massachusetts Institute of Technology
2016-2025
Singapore-MIT Alliance for Research and Technology
2020-2025
Cambridge Electronics (United States)
2018-2022
GlobalFoundries (Singapore)
2022
Institute of Microelectronics
2022
A*STAR Graduate Academy
2022
Ayar Labs (United States)
2018
University of California, Santa Cruz
2004-2011
Advanced Research Projects Agency - Energy
2010
Vassar College
2006-2009
We analyze elementary properties of exciton and polariton lasers --- devices that generate coherent optical matter waves using final-state stimulation exciton-phonon scattering. First we discuss the relation between conditions for onset equilibrium nonequilibrium excitonic condensates. Provided thermal de Broglie wavelength ${\ensuremath{\lambda}}_{\mathit{T}}$ exceeds Bohr radius ${\mathit{a}}_{\mathit{B}}$, an laser operates without electronic population inversion. In contrast to previous...
Accurate conversion of wideband multi-GHz analog signals into the digital domain has long been a target analog-to-digital converter (ADC) developers, driven by applications in radar systems, software radio, medical imaging, and communication systems.Aperture jitter major bottleneck on way towards higher speeds better accuracy.Photonic ADCs, which perform sampling using ultra-stable optical pulse trains generated mode-locked lasers, have investigated for many years as promising approach to...
This paper presents photonic devices with 3 dB/cm waveguide loss fabricated in an existing commercial electronic 45 nm SOI-CMOS foundry process. By utilizing front-end fabrication processes the are monolithically integrated electronics same physical device layer as transistors achieving 4 ps logic stage delay, without degradation transistor performance. We demonstrate 8-channel optical microring-resonator filter bank and modulators, both controlled by digital circuits. developing a design...
Integrating photonics with advanced electronics leverages transistor performance, process fidelity and package integration, to enable a new class of systems-on-a-chip for variety applications ranging from computing communications sensing imaging. Monolithic silicon is promising solution meet the energy efficiency, sensitivity, cost requirements these applications. In this review paper, we take comprehensive view performance silicon-photonic technologies developed date photonic interconnect...
GaAs/Al x Ga (1−x) As quantum well lasers have been demonstrated via organometallic chemical vapor deposition on relaxed graded Ge/GexSi(1−x) virtual substrates Si. A number of GaAs/Ge/Si integration issues including Ge autodoping behavior in GaAs, reduced critical thickness due to thermal expansion mismatch, and complications with mirror facet cleaving overcome. Despite unoptimized laser structures high series resistance large threshold current densities, surface threading dislocation...
We present a new monolithic silicon photonics technology suited for integration with standard bulk CMOS processes, which reduces costs and improves opto-electrical coupling compared to previous approaches. Our supports dense wavelength-division multiplexing dozens of wavelengths per waveguide. Simulation experimental results reveal an order magnitude better energy-efficiency than electrical links in the same generation. Exploiting key features our technology, we have developed...
Arrays of discrete, lithographically patterned magnetic elements have been proposed as a new generation ultrahigh density storage media. Interferometric lithography has used to make prototype arrays over large areas with periods 100–200 nm. pillars, pyramids, and dots made by electrodeposition, evaporation liftoff, etching processes, the properties particles their mutual interactions measured.
CCD-based thermoreflectance microscopy has emerged as a high resolution, non-contact imaging technique for thermal profiling and performance reliability analysis of numerous electronic optoelectronic devices at the micro-scale. This thermography technique, which is based on measuring relative change in reflectivity device surface function temperature, provides high-resolution images that are useful hot spot detection failure analysis, mapping temperature distribution, measurement transient,...
Silicon photonics is a promising technology for addressing memory bandwidth limitations in future many-core processors. This article first introduces new monolithic silicon-photonic technology, which uses standard bulk CMOS process to reduce costs and improve energy efficiency, then explores the logical physical implications of leveraging this processor-to-memory networks.
We propose a new scheme for lasing without population inversion that utilizes interferences in double-quantum-well intersubband transitions. In contrast to the previous inversionless laser schemes based on atomic systems, proposal permits us use band-gap engineering choose subband energies, coupling strengths, and decay rates, as desired, create system does not require inversion. present detailed calculations specific discuss possible extensions.
<a href="http://www.osa-jon.org/virtual_issue.cfm?vid=28">Feature Issue on Nanoscale Integrated Photonics for Optical Networks</a> The goal of the research program that we describe is to break emerging performance wall in microprocessor development arising from limited bandwidth and density on-chip interconnects chip-to-chip (processor-to-memory) electrical interfaces. Complementary metal-oxide semiconductor compatible photonic devices provide an infrastructure deployment a range integrated...
We explore the application of organofunctional silanes for bonding plastic substrates to PDMS membranes. Such devices would enable actuated membrane microfluidics in devices. Bond strength degradation aqueous environments can be reduced by using bis-silanes with larger alkoxy end groups promote bond formation substrate. Hydrolytic failure also result from low silane crosslink density or interface hydrophilicity. A test device consisting three-valve peristaltic pumps is fabricated out...
We demonstrate a monolithic photonic integration platform that leverages the existing state-of-the-art CMOS foundry infrastructure.In our approach, proven XeF 2 post-processing technology and compliance with electronic process flows eliminate need for specialized substrates or wafer bonding.This approach enables intimate of large numbers nanophotonic devices alongside high-density, highperformance transistors at low initial incremental cost.We this by presenting grating-coupled,...
A heated semiconductor light-emitting diode at low forward bias voltage V<k(B)T/q is shown to use electrical work pump heat from the lattice photon field. Here rates of both radiative and nonradiative recombination have contributions linear order in V. As a result device's wall-plug (i.e., power conversion) efficiency inversely proportional its output diverges as V approaches zero. Experiments directly confirm for first time that this behavior continues beyond conventional limit unity...
The microring resonator is critical for dense wavelength division multiplexed (DWDM) chip-to-chip optical I/O, enabling modulation and channel selection at the <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$\upmu\text{m}$</tex-math></inline-formula> -scale suitable a VLSI chip. Microring-based links, however, require active tuning to counteract process thermo-optic variations. Here, we present...
We present a low-loss integrated photonics platform in the visible and near ultraviolet regime. Fully-etched waveguides based on atomic layer deposition (ALD) of aluminum oxide operate single transverse mode with $<$3 dB/cm propagation loss at wavelength 371 nm. Ring resonators intrinsic quality factors exceeding 470,000 are demonstrated 405 nm, thermo optic coefficient ALD is estimated to be $2.75\times10^{-5}$ [RIU/$^\circ$C]. Absorption sufficiently low allow on-resonance operation...
Abstract Precision agriculture requires new technologies for rapid diagnosis of plant stresses, such as nutrient deficiency and drought, before the onset visible symptoms subsequent yield loss. Here, we demonstrate a portable Raman probe that clips around leaf rapid, in vivo spectral analysis metabolites including carotenoids nitrates. We use leaf-clip sensor early nitrogen model Arabidopsis thaliana well two important vegetable crops, Pak Choi ( Brassica rapa chinensis ) Choy Sum var....
We have probed the local thermoelectric power of semiconductor nanostructures with use ultrahigh-vacuum scanning microscopy. When applied to a p-n junction, this method reveals that changes its sign abruptly within 2 nanometers across junction. Because correlates electronic structure, we can profile nanometer spatial resolution power, band structures, and carrier concentrations junctions constitute building blocks thermoelectric, electronic, optoelectronic devices.