A5102862917- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- Natural Language Processing Techniques
- Topic Modeling
- Nanowire Synthesis and Applications
- Immune Cell Function and Interaction
- T-cell and B-cell Immunology
- Advanced Memory and Neural Computing
- Quantum and electron transport phenomena
- Electronic and Structural Properties of Oxides
- Surface and Thin Film Phenomena
- Copper Interconnects and Reliability
- Ferroelectric and Negative Capacitance Devices
- Multimodal Machine Learning Applications
- Speech Recognition and Synthesis
- Extracellular vesicles in disease
- Immunotherapy and Immune Responses
- Legal Systems and Judicial Processes
- Integrated Circuits and Semiconductor Failure Analysis
- ZnO doping and properties
- Criminal Law and Evidence
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and interfaces
- Explainable Artificial Intelligence (XAI)
- Electrochemical Analysis and Applications
Johns Hopkins University
2022-2024
Columbia University
2020-2021
Taiwan Semiconductor Manufacturing Company (United States)
2021
Laboratoire d'Informatique de Paris-Nord
2020-2021
Scottish Universities Physics Alliance
2021
University of the West of Scotland
2021
Samsung (United States)
2016-2020
Second Military Medical University
2013-2019
Purdue University West Lafayette
2008-2018
Peking University
2018
Long noncoding RNAs (lncRNAs) play important roles in diverse biological processes; however, few have been identified that regulate immune cell differentiation and function. Here, we lnc-DC, which was exclusively expressed human conventional dendritic cells (DCs). Knockdown of lnc-DC impaired DC from monocytes vitro mouse bone marrow vivo reduced capacity DCs to stimulate T activation. mediated these effects by activating the transcription factor STAT3 (signal transducer activator 3). bound...
Hepatocellular carcinoma (HCC) is one of the most common malignancies worldwide with limited therapeutic options. HCC-induced immunosuppression often leads to ineffectiveness immuno-promoting therapies. Currently, suppressing suppressors has become potential strategy for cancer immunotherapy. So, figuring out immunosuppressive mechanisms induced and employed by HCC will be helpful design application Here, we identified new subset human CD14+CTLA-4+ regulatory dendritic cells (CD14+DCs) in...
We address the problem of automatic detection psychiatric disorders from linguistic content social media posts. build a large scale dataset Reddit posts users with eight and control user group. extract analyze characteristics identify differences between diagnostic groups. strong classification models based on deep contextualized word representations show that they outperform previously applied statistical simple features by margins. compare user-level post-level performance, as well an...
We introduce Uncertain Natural Language Inference (UNLI), a refinement of (NLI) that shifts away from categorical labels, targeting instead the direct prediction subjective probability assessments. demonstrate feasibility collecting annotations for UNLI by relabeling portion SNLI dataset under probabilistic scale, where items even with same label differ in how likely people judge them to be true given premise. describe scalar regression modeling approach, and find existing...
Regulatory T cells can restrict the uncontrolled immune response and inflammation, avoiding pathologic injury to host thus playing important roles in maintenance of homeostasis. Until recently, many subsets CD4 CD8 regulatory have been reported. In this study, we identified CD11c(high)CD8(+) as a new subset CD8(+) cells. During Listeria monocytogenes Staphylococcus aureus infection, two were classified according expression level CD11c, including CD11c(low)CD8(+) cells, existing during whole...
The potential of embedded STT-MRAM technology for designing large-scale multiply-and-accumulation (MAC) array circuits are evaluated by comprehensive and holistic design-technology co-optimizations. After careful calibrations with experimental data, post-layout circuit simulations together GPU-enabled massively parallel Monte Carlo evaluations conducted to guarantee the designs at rare failure rates. With all critical device design non-idealities included, architectural emulations performed...
Scattering effects, from $e.g.$ grain boundaries and surface roughness, are significant in ultraminiaturized copper interconnects. $A\phantom{\rule{0}{0ex}}b$ $i\phantom{\rule{0}{0ex}}n\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}t\phantom{\rule{0}{0ex}}i\phantom{\rule{0}{0ex}}o$ methods cannot handle structures with thousands of atoms, yet detailed atomistic analyses needed. This study utilizes semi-empirical tight-binding to simulate interconnects over 10,000 atoms (current industrial...
A sharp potential barrier at the Si/SiGe interface introduces valley splitting (VS), which lifts 2-fold degeneracy in strained SiGe/Si/SiGe quantum wells (QWs). This work examines detail effects of disorder on VS an atomistic tight binding approach based statistical sampling. is analyzed as a function electric field, QW thickness, and simulation domain size. Strong fields push electron wavefunctions into SiGe buffer introduce significant fluctuations from device to device. Gedankenexperiment...
In this paper, we demonstrate InAs/GaSb hetero-junction (hetJ) and GaSb homo-junction (homJ) p-channel tunneling field effect transistors (pTFET) employing a low temperature atomic layer deposited high-κ gate dielectric. HetJ pTFET exhibited drive current of 35 μA/μm in comparison to homJ pTFET, which 0.3 at VDS = −0.5 V under DC biasing conditions. Additionally, with pulsing 1 μs voltage, hetJ enhanced 85 V, is the highest reported category III-V pTFET. Detailed device characterization was...
Full-band quantum transport simulations are performed to study the scaling of InGaAs MOSFETs. Short-channel effects evoke severe performance degradation in MOSFETs and tunneling leakage further deteriorates their performances. Reducing body width is shown suppress short channel effects. Doping densities show big impacts on device With inhomogeneous doping could outperform Si at gate lengths below 15 nm with 5-nm width. The density state bottleneck does not affect simulated devices 0.5 V...
As the scaling of transistors approaches 7-/5-nm technology nodes, direct source-to-drain tunneling (SDT) is becoming increasingly important with shrinking gate lengths. In this paper, we present a comprehensive simulation study on effects SDT in ultrascaled FETs various channel materials (Si, Ge, SiGe, InGaAs, and so on), surface/channel orientation configurations, lengths, body thicknesses, doping concentrations, stress levels, temperatures. The nonequilibrium Green's function formalism...
Mixed valence rare-earth samarium compounds SmX (X=Se,Te) have been recently proposed as candidate materials for use in high-speed, low-power digital switches driven by stress induced changes of resistivity. At room temperature these exhibit a pressure insulator-to-metal transition with resistivity decreasing up to 7 orders magnitude over small range. Thus, the application only few GPa's piezoresistor (SmX) allows switching device perform complex logic. Here we study from first principles...
The Piezoelectronic Transistor (PET) has been proposed as a post-CMOS device for fast, low-power switching. In this device, the piezoresistive channel is metalized via expansion of relaxor piezoelectric element to turn on. mixed-valence compound SmSe good choice PET material because its isostructural pressure-induced continuous metal insulator transition, which well characterized in bulk single crystals. Prediction and optimization performance realistic, nano-scaled based on requires...
Quantum transport simulations are performed in tunneling FETs (TFETs) with the gate electric field in-line junction direction (in-line TFETs). Charge self-consistency and thermalization effects included a semiclassical Poisson solution to compute electrostatic potential. The obtained potential is then used for current calculation ballistic nonequilibrium Green's function method (NEGF) tight binding basis. It shown that NEGF predicts higher subthreshold swing than often-used dynamic nonlocal...
Semiconductor devices are scaled down to the level which constituent materials no longer considered continuous. To account for atomistic randomness, surface effects and quantum mechanical effects, an modeling approach needs be pursued. The Nanoelectronic Modeling Tool (NEMO 3-D) has satisfied requirement by including emprical $sp^{3}s^{*}$ $sp^{3}d^{5}s^{*}$ tight binding models considering strain successfully simulate various semiconductor material systems. Computationally, however, NEMO...