A5010874651- GaN-based semiconductor devices and materials
- Semiconductor Quantum Structures and Devices
- Semiconductor materials and devices
- Ga2O3 and related materials
- Quantum and electron transport phenomena
- ZnO doping and properties
- Gas Sensing Nanomaterials and Sensors
- Electronic and Structural Properties of Oxides
- Innovative Energy Harvesting Technologies
- Energy Harvesting in Wireless Networks
- Nanowire Synthesis and Applications
- Semiconductor materials and interfaces
- Advanced Electron Microscopy Techniques and Applications
- Advanced Sensor and Energy Harvesting Materials
- Ear and Head Tumors
- Dental Radiography and Imaging
- Salivary Gland Tumors Diagnosis and Treatment
- Oral and Maxillofacial Pathology
- Wireless Power Transfer Systems
- Quantum Dots Synthesis And Properties
- Photonic and Optical Devices
- Dental materials and restorations
- Integrated Circuits and Semiconductor Failure Analysis
- Electron and X-Ray Spectroscopy Techniques
- Surface and Thin Film Phenomena
University of Waterloo
2021-2024
Qatar Airways (Qatar)
2022
Indian Institute of Science Bangalore
2011-2018
This paper reports an improvement in Pt/n-GaN metal-semiconductor (MS) Schottky diode characteristics by the introduction of a layer HfO2 (5 nm) between metal and semiconductor interface. The resulting Pt/HfO2/n-GaN metal-insulator-semiconductor (MIS) showed increase rectification ratio from 35.9 to 98.9(@ 2V), barrier height (0.52 eV 0.63eV) reduction ideality factor (2.1 1.3) as compared MS Schottky. Epitaxial n-type GaN films thickness 300nm were grown using plasma assisted molecular beam...
Nonpolar a-GaN (11-20) epilayers were grown on r-plane (1-102) sapphire substrates using plasma assisted molecular beam epitaxy. High resolution x-ray diffractometer confirmed the orientation of film. Effect Ga/N ratio morphology and strain was compared best condition obtained for nitrogen flow 1 sccm. Atomic force microscopy used to analyze surface while in film quantitatively measured Raman spectroscopy qualitatively analyzed by reciprocal space mapping technique. UV photo response after...
Nonpolar a-plane GaN epitaxial films were grown on an r-plane sapphire using the plasma-assisted molecular beam epitaxy system, with various nitrogen plasma power conditions. The crystallinity of was characterized by high-resolution X-ray diffraction and reciprocal space mapping. Using "rocking curve-phi scan", [0002], [1-100], [1-102] azimuth angles identified, interdigitated electrodes along these directions fabricated to evaluate direction-dependent UV photoresponses. responsivity ( R)...
Self-assembled InN quantum dots (QDs) were grown on Si(111) substrate using plasma assisted molecular beam epitaxy (PA-MBE). Single-crystalline wurtzite structure of QDs was confirmed by X-ray diffraction. The dot densities varied varying the indium flux. Variation density FESEM images. Interdigitated electrodes fabricated standard lithog- raphy steps to form metal-semiconductor-metal (MSM) photodetector devices. devices show strong infrared response. It found that samples with higher showed...
InN quantum dots (QDs) were fabricated on silicon nitride/Si (111) substrate by droplet epitaxy. Single-crystalline structure of QDs was verified transmission electron microscopy, and the chemical bonding configurations examined x-ray photoelectron spectroscopy. Photoluminescence measurement shows a slight blue shift compared to bulk InN, arising from size dependent confinement effect. The interdigitated electrode pattern created current–voltage (I–V) characteristics studied in...
200 nm thick films of gallium nitride were grown on sapphire substrate using molecular beam epitaxy. Gold nanoparticles fabricated the by thermal evaporation followed annealing. Aluminium nanostructures another set nanosphere lithography. Interdigited electrodes standard lithography to form metal-semiconductor-metal photodetectors. The performance bare compared with samples that had Au and Al nanostructures. An enhancement photocurrent negligible change in dark current was observed both cases.
We have realized quantized charge pumping using non-adiabatic single-electron pumps in dopant-free GaAs two-dimensional electron gases (2DEGs). The III-V platform allows for ambipolar devices, such as p-i-n junctions, that could be combined with to form electrically-driven single photon sources. Our operate at up 0.95 GHz and achieve remarkable performance considering the relaxed experimental conditions: one-gate zero magnetic field temperatures 5K, driven by a simple RF sine waveform....
Piezoelectric energy harvesting systems are used to convert vicinity vibrations into useful electrical energy. Effect of various shapes and materials open the gateway towards choice maximum power generation for micro nano world. Comsol Multiphysics was simulate four designed named as Pi, E, Rectangular T in size range less than 1mm but greater 1 micron. Designed worked under impact ambient using few piezoelectric so that traditional sources can be replaced with such harvester. A layer...
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result gain mobility given density, primarily driven by reduction background impurities. In closer to surface, loss, an increase charge density. Biased with applied gate voltages gain, whereas those loss. The...
This paper presents the simulation studies of Metal-Semiconductor-Metal (MSM) Photodetector (PD) with and without plasmonic enhancement. The simulations were carried out using COMSOL Multiphysics® software. semiconductor layer was p-type ZnO a doping concentration 1016/cm3. Au nanoparticles. PD irradiated 10W UV radiation wavelength 280nm. output currents MSM found to be ∼0.9×10-7 A ∼0.8×10-8 respectively. It observed that there is an appreciable increase (factor 10) in photo current devices...
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role modern society, from alleviating speed capacity bottlenecks optical communications to enhancing control safety autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation improve photodetection, aiming surpass performance established III-V semiconductor p-i-n (PIN) junction technology. These include situ-grown inorganic nanocrystals...
Fast and accurate detection of light in the near-infrared (NIR) spectral range plays a crucial role modern society, from alleviating speed capacity bottlenecks optical communications to enhancing control safety autonomous vehicles through NIR imaging systems. Several technological platforms are currently under investigation improve photodetection, aiming surpass performance established III-V semiconductor p-i-n (PIN) junction technology. These include situ-grown inorganic nanocrystals...
Illumination is performed at low temperature on dopant-free two-dimensional electron gases (2DEGs) of varying depths, under unbiased (gates grounded) and biased a positive or negative voltage) conditions. Unbiased illuminations in 2DEGs located more than 70 nm away from the surface result gain mobility given density, primarily driven by reduction background impurities. In closer to surface, loss, an increase charge density. Biased with applied gate voltages gain, whereas those loss. The...
Pleomorphic adenoma is a most common benign neoplasm of salivary glands that has the epithelial as well mesenchymal elements. The World Health Organization in 1972 defined pleomorphic “well-defined tumor characterized by its or mixed appearance.” There intermixing clearly identified components with mucoid, myxoid, and chondroid components. commonly arises parotid submandibular gland infrequently occurs minor presents intraoral swellings on palate lip. shows malignant transformation rate...
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use quantum optoelectronics (e.g., optical computers or repeaters) and ease of integration with other components, such as single electron pumps spin qubits. A major obstacle has been unwanted charge accumulation at junction gap that suppresses light emission, either enhanced non-radiative recombination inhibition current. Typically, samples must frequently be warmed room...
In this research, we presents a novel design for an all-electrical single photon emitter that utilizes electron pump and lateral p-n junction based on AlGaAs/GaAs heterostructure. The fundamental promise of emission is achieved by injecting one only into the junction, where generated after e-h radiative recombination. This ensures intrinsically on-demand deterministic source. Up to GHz repetition rate expected given has demonstrated quantized generation electrons in range. We will present...
Dopant-free lateral p-n junctions in the GaAs/AlGaAs material system have attracted interest due to their potential use quantum optoelectronics (e.g., optical computers or repeaters) and ease of integration with other components, such as single electron pumps spin qubits. A major obstacle has been unwanted charge accumulation at junction gap that suppresses light emission, either enhanced non-radiative recombination inhibition current. Typically, samples must frequently be warmed room...
Three-dimensional imaging, particularly cone-beam computed tomography (CBCT), has made significant contributions to the planning and placement of implants missing tooth or at immediately removed tooth. The accuracy CBCT data can be used fabricate a surgical guide that transfers implant information site facilitate placement. Prosthetically driven prosthesis assures good aesthetics, function more importantly hygiene maintenance enabling long time success. Accuracy in treatment implementation...