According to the ITRS Roadmap, EUV mask requirement for 2X nm technology node is detection of defect size 20 nm. The history optical inspection tools involves continuous efforts realize higher resolution and throughput. In terms productivity, considering resolution, throughput cost, we studied capability light Electron Beam (EB) inspection, using Scanning Microscope (SEM), including prolongation conventional inspection. As a result our study, solution propose EB Projection (PEM) technique an...

We are developing new electron beam inspection system, named EBeyeM, which features high speed and resolution for EUV mask. Because EBeyeM has the projection microscope technique, scan time of is much faster than that conventional SEM system. developed prototype EBeyeM. The aim system to prove concept estimate specification 2Xnm 1Xnm In this paper, we describe outline performance results This two mode. One particle other pattern defect inspection. As sensitivity development target 30nm mode...

Fabrication of defect free EUV masks including their inspection is the most critical challenge for implementing lithography into semiconductor high volume manufacturing (HVM) beyond 22nm half-pitch (HP) node. The contact to bit-line (CB) layers NAND flash devices are likely first that will be employed due aggressive scaling and difficulty making pattern with current ArF lithography. To assure mask, we have evaluated electron beam (EBI) system eXplore™ 5200 developed by Hermes...

Contribution of mask line edge roughness (LER) to resist LER on wafers was studied both by simulations and experiments. transfer function (LTF) introduced Naulleau Gallatin generalized include the effect error enhancement factor (MEEF). Low spatial frequency part LTF enhanced MEEF while high suppressed due numerical aperture limit a stepper. Our model experimentally verified as follows. First measured scanning electron microscope. Then multiplied simulate aerial image wafers. It confirmed...

Microporous structures of nickel-aluminide thick films lining the inner wall microchannels have been investigated. The were produced in metal bodies by a powder metallurgical process utilizing microscopic reactive infiltration. In experiment, nickel-powder compact containing shaped aluminum wires was sintered at temperature between melting points nickel and aluminum. Infiltration diffusion into surrounding powder, accompanied reaction metals, occurred during sintering brought about formation...

The impingement of pipe laminar jets is commonly used in run-out-table cooling hot rolling mills. In this process, a moving steel sheet cooled by array jets. When the spacing between two neighbor small width direction, flow interaction water on inevitable, resulting complex heat transfer phenomena. present study, boiling during or three onto was studied laboratory-scale experiments. test coolant at room temperature. Water were produced from 5-mm-diameter nozzles mean velocity 0.8 m/s. nozzle...

Recently, development of next generation extremely ultraviolet lithography (EUVL) equipment with high-NA (Numerical Aperture) optics for less than hp10nm node is accelerated. Increasing magnification projection or mask size using conventional structure has been studied, but these methods make cost high because low through put and preparing new large infrastructures. To avoid issues, etched multilayer EUV proposed. As a result improvement binary process, hp40nm line space pattern on (hp10nm...

Recently, development of next generation extremely ultraviolet lithography (EUVL) equipment with high-NA (Numerical Aperture) optics for less than hp10nm node is accelerated. While studying more 0.45 NA, incident angle distribution EUV light irradiation to mask becomes larger. It induces degradation exposure margin form horizontal line pattern (perpendicular direction) because large 3D effect. In order resolve this issue, we evaluate binary etched multilayer structure, unlike conventional...

UV NIL shows excellent resolution capability with remarkable low line edge roughness, and has been attracting pioneers in the industry who were searching for finest patterns. We have focused on improvement template making a 100keV acceleration voltage spot beam EB writer process, established process to meet requirements of pioneers. Usually such templates needed just small field (several hundred microns square or so) Now, several semiconductor devices, is considered not only as patterning...

We have developed a new focused ion beam (FIB) technology using gas field source (GFIS) for mask repair. Meanwhile, since current high-end photomasks do not high durability in exposure nor cleaning, some photomask materials are proposed. In 2012, we reported that our GFIS system had repaired representative material "A6L2". It is currently expected to extend the application range of various and defect shapes. this study, single bridge, triple bridge missing hole on phase shift (PSM) "A6L2",...

Development of nanoimprint lithography (NIL) templates is discussed. The template fabrication process and its performance are presented with consideration the requirements NIL for high-volume manufacturing. Defectivity, image placement, critical dimension uniformity three major parameters templates, their current status shown.

The effect of mask structure with light shield area on the printability in EUV lithography was studied. When very thin absorber EUVL is used for ULSI application, it then becomes necessary to create order suppress possible leakage from neighboring exposure shots. We proposed and fabricated two types masks structure. For both we demonstrated high performances at areas by employing a Small Field Exposure Tool (SFET).

Nano-imprint lithography (NIL) has been counted as one of the candidates for hp32nm node and beyond showed excellent resolution capability with remarkable low line edge roughness that is attracting many researchers in industry who were searching finest patterning technology. Therefore, recently we have focusing on improvement NIL templates 100keV acceleration voltage spot beam (SB) EB writer 50keV variable shaped (VSB) writer. The SB writers high capability, but they show fatally throughput...

Electron backscattering from Extreme Ultraviolet (EUV) masks during Beam (EB) exposure was studied by simulations and experiments. The film structure of EUV is quite different that photomasks. Mo/Si multilayer on the substrate very thick (280 nm) heavy metal material such as Ta used for absorber. Monte Carlo suggest absorbed energy inside resist caused backscattered electrons these films non-negligible, about 1/10 forward scattering 1/4 substrate. Also show influence range short because...

EUV lithography (EUVL) is the most promising solution for 16nm HP node semiconductor device manufacturing and beyond. The fabrication of defect free mask one challenging roadblocks to insert EUVL into high volume (HVM). To fabricate assure masks, electron beam inspection (EBI) tool will be likely necessary since optical systems using 193nm 199nm light are reaching a practical resolution limit around mask. For production use EBI, several challenges potential issues expected. Firstly, required...

Phase-shifting effect of EUV masks with various absorber thicknesses has been studied both by simulations and experiments. In lithography, 180 phase shifting work like embedded attenuated phase-shifting masks. At 66nm thickness TaN/TaON absorber, degree can be achieved in theory. Based on the experiments, we observed that true180 between 66 76 nm. this paper, impact absorbers characterized. Imaging performance 51 nm, nm thick experimentally compared. The process window are rigorously studied.

Absorber layer patterning process for low reflectivity tantalum boron nitride (LR-TaBN) absorber and chromium (CrN) buffer were improved to satisfy high resolution pattern level critical dimension (CD) control. To make 100nm smaller size, under 300nm resist thickness was needed because of collapse issue. We developed dry etching resist. done by a consequence carbon fluoride gas chlorine process. evaluated both processes made clear each character. Sufficient selectivity, vertical side wall,...

Double patterning technology (DPT) is one of the most practical candidate technologies for 45nm half-pitch or beyond while conventional single exposure (SE) still dominant with hyper NA avoiding DPT difficulties such as split-conflict overlay issue. However small target dimension and strong illumination causes OPC difficulty latitude lithography photomask fabricated much tight specification are required SE. Then there must be double (DP) approach even SE available resolution. In this paper...

EUV mask pattern inspection was investigated using current DUV reticle tool. Designed defect of 65nm node and 45nm were prepared. We compared sensitivity between before buffer etch after pattern, die to mode database mode. Inspection difference not observed pattern. In addition inspection, wafer print simulation program investigated. Simulation results result. confirmed tool has potential for inspection.

At the Photomask Japan 2010, we reported on cleaning process durability and EUV light shielding capability of FIB- EB-CVD film based carbon, tungsten silicon containing precursors. The results were that FIB-CVD showed no loss thickness after dry process, calculation 56nm thick was sufficient for repairing clear defects mask with 51nm absorber layer. On other hand, carbon suffered considerable in its needed more than 180nm even if 10nm buffer layer between CVD films capping supported shield....

For EUVL mask with thinner absorber, it is necessary to make black border area in order suppress the leakage of EUV light from adjacent exposure shots Black etched multilayer promising structure terms light-shield capability and process simplicity. However, masks this do not have electrical conductivity between inside outside border. Inspection including device patterns belongs In case that quality check for performed E-beam inspection, floating. As a result, electrification pattern occurs...

Performances of the nanoimprint lithography templates were discussed considering readiness toward high volume manufacturing application along with requirement for and its fabrication process. The current status three major performances was shown.

After quartz blanks with various sulfate ion amount on the surfaces were exposed by an ArF laser, growing defects, haze, consequently counted inspection tool. As a result, number of haze largely depends amount, and it is found that no generated when smaller than threshold value. A new generation model provided to explain phenomenon. And then storage impact increase was investigated. The increases time airborne SO_x concentration. From results, adsorption coefficient extended...