A5082265994- Advanced Optical Sensing Technologies
- CCD and CMOS Imaging Sensors
- Advanced Fluorescence Microscopy Techniques
- Ocular and Laser Science Research
- Analytical Chemistry and Sensors
- Integrated Circuits and Semiconductor Failure Analysis
- Optical Wireless Communication Technologies
- Neural Networks and Reservoir Computing
- Oil Spill Detection and Mitigation
- Remote Sensing and LiDAR Applications
- Microwave Engineering and Waveguides
- Photocathodes and Microchannel Plates
- Optical Network Technologies
- Full-Duplex Wireless Communications
- Energy Harvesting in Wireless Networks
- Chaos-based Image/Signal Encryption
- Random lasers and scattering media
- Optical Imaging and Spectroscopy Techniques
École Polytechnique Fédérale de Lausanne
2019-2023
Quantum random number generators (QRNGs) are a burgeoning technology used for variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with extraction or bit generation circuit in order to produce string. In integrated designs, there is often little modeling analytical description the source, extraction, post-processing provided. this work, we present single-photon avalanche diode (SPAD)-based QRNG design, which utilizes...
CMOS single-photon avalanche diodes (SPADs) have broken into the mainstream by enabling adoption of imaging, timing, and security technologies in a variety applications within consumer, medical industrial domains. The continued scaling technology nodes creates many benefits but also obstacles for SPAD-based systems. Maintaining and/or improving upon high-sensitivity, low-noise, timing performance demonstrated SPADs custom or well-established image sensor processes remains challenge. In this...
We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 × single-photon avalanche diodes (SPADs) and measures 0.29 0.32 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> . Each SPAD cell passively quenched by monolithically integrated 3.3 V thick oxide transistor. measured gain 3.4 10...
The radiation hardness of 180 nm complementary metal–oxide–semiconductor (CMOS) and 55 bipolar–CMOS–double-diffused MOS single-photon avalanche diodes (SPADs) is studied using 10 MeV 100 protons up to a displacement damage dose 1 PeV/g. It found that the dark count rate (DCR) levels are dependent on number type defects created. A new stepwise increase in DCR presented. Afterpulsing was be significant contributor observed increase. model for prediction proposed considering afterpulsing. Most...
Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene the presence overwhelming amount early-arrival photons, single-gated SPAD is widely employed to mitigate pile-up. However, additional prior knowledge range and relay surface profile are required preset gating position implement reconstruction. With this work, we propose...
We present a single-photon avalanche diode (SPAD) developed in 55 nm bipolar-CMOS-DMOS (BCD) technology, which achieves high photon detection probability (PDP) while its breakdown voltage is lower than 20 V. To enhance the PDP performance, SPAD junction optimized with lightly-doped-drain and high-voltage-well layers are provided BCD process. In addition, dielectric over properly etched to reduce multilayer reflections so that collection efficiency can be maximized. The peak of 89.4% at 450...
Active retrodirective antenna arrays find a variety of use in applications involving wireless communication and sensing systems. This article presents novel active version the phase-conjugating Rotman lens with negative conductance amplifiers for requiring high gain or modulation capability. Implementation challenges limitations extending existing passive into this enhanced mode are described. In order to retain system stability when electrically connecting multiple potentially unstable...
Single-photon avalanche diode (SPAD) based sensors and systems enable a variety of applications in biomedical, automotive, consumer, security domains. While several established standard technologies, which can facilitate the design SPAD-based are already existence, challenges remain for development deep sub-micron monolithic integration circuits SPADs. In this work, we present SPADs along with pixel GF 55 nm BCDL process. Two different designs demonstrate flexibility allowed by technology...
Quantum random number generators are a burgeoning technology used for variety of applications, including modern security and encryption systems. Typical methods exploit an entropy source combined with extraction or bit generation circuit in order to produce string. In integrated designs there is often little modelling analytical description the source, post-processing provided. this work, we first discuss theory on quantum flip-flop (QRFF), which elucidates role imperfections that manifest...
We first characterized large 180 nm CMOS single-photon avalanche diode (SPAD) imagers under 10 and 100 MeV protons irradiation up to a displacement damage dose of 1 PeV/g. used the dark count rate (DCR) assess non-ionizing levels created by protons. It is shown that DCR are determined number type defects within photocollector region irradiated SPAD. also found activation energies correspond defect energy oxygen-vacancy, divacancy, phosphorus-vacancy complexes. After irradiation, reduction...
We demonstrate the operation and study performance metrics of advanced CMOS single-photon avalanche diodes from 293K down to 3K. This shows their potential for close integration with quantum devices operating at cryogenic temperatures.
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD cell passively quenched by monolithically integrated 3.3 V thick oxide transistor. measured gain 3.4$\times$ 10$^5$ at 5 excess bias voltage. timing resolution (SPTR) 185 ps the multiple-photon (MPTR) 120 integrate into co-axial light detection ranging...