A5027755690- Advanced Optical Sensing Technologies
- Advanced Fluorescence Microscopy Techniques
- Ocular and Laser Science Research
- Analytical Chemistry and Sensors
- CCD and CMOS Imaging Sensors
- Biosensors and Analytical Detection
- Advanced Surface Polishing Techniques
- Advancements in Photolithography Techniques
- Optical Imaging and Spectroscopy Techniques
- Spectroscopy and Laser Applications
- Nanofabrication and Lithography Techniques
- Radiation Detection and Scintillator Technologies
- Integrated Circuits and Semiconductor Failure Analysis
GlobalFoundries (Germany)
2024
GlobalFoundries (Singapore)
2023-2024
GlobalFoundries (United States)
2022
Cytel (United States)
2016-2020
Voxtel (United States)
2016-2020
Stony Brook University
2005-2008
State University of New York
2005
We introduce a new family of single-photon avalanche diodes (SPADs) with enhanced depletion regions in 55-nm Bipolar-CMOS-DMOS (BCD) technology. demonstrate how to systematically engineer doping profiles the main junction and deep p-well layers achieve high sensitivity low timing jitter. A sub 10 μm SPADs was designed fully characterized. With increase well-defined region, breakdown voltages three variants are 17.1, 20.6, 23.0 V, respectively, peak PDP wavelengths 450 nm, 540 640...
We present an analog silicon photomultiplier (SiPM) based on a standard 55-nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16 × single-photon avalanche diodes (SPADs) and measures 0.29 0.32 mm <inline-formula xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"><tex-math notation="LaTeX">$^{2}$</tex-math></inline-formula> . Each SPAD cell passively quenched by monolithically integrated 3.3 V thick oxide transistor. measured gain 3.4 10...
Time-resolved non-line-of-sight (NLOS) imaging based on single-photon avalanche diode (SPAD) detectors have demonstrated impressive results in recent years. To acquire adequate number of indirect photons from a hidden scene the presence overwhelming amount early-arrival photons, single-gated SPAD is widely employed to mitigate pile-up. However, additional prior knowledge range and relay surface profile are required preset gating position implement reconstruction. With this work, we propose...
We demonstrate use of silicon photomultipliers (SiPMs) in single photon counting mode for detection very weak laser induced fluorescence (LIF). Detection LIF DNA-sequencing has been performed with three different commercially available SiPMs.
We present the design, implementation, and characterization of a single-photon counting module (SPCM) based on large-area avalanche photodiode (APD) new logic circuit TTL integrated circuits (ICs) for generating precise quench reset delays. Low dark count rate, high linearity 2 MHz, maximum dynamic range 12 minimum dead time 35 ns have been achieved with 0.2 mm peltier-cooled single photon diode (SPAD) [model C30902S-DTC, Perkin Elmer Optoelectronics (PKI)]. The developed was fiberized...
Silicon (Si) single-photon avalanche diode (SPAD) arrays sensitive to the 400to 900-nm wavelength range have been studied for a number of uses due their high detection efficiency; zero readout noise; low timing jitter; mechanical robustness; low-voltage(<; 50 V) operation; mass producibility; and size, weight, power, cost. As with all solid-state detectors, however, they are susceptible damage by radiation, displacement energetic particles being primary concern many applications. This...
The latest three-dimensional imaging results from Voxtel teamed with the University are Dayton presented using Voxtel's VOX3D™ series flash lidar camera. This camera uses VOX3D sensor which integrates a 128×128 InGaAs p-i-n detector array custom, multi-mode, low-noise, complementary metal-oxide semiconductor readout integrated circuit. In this paper, of: short-range (< 10 m) performed at of fast, low-power eye safe laser (20-μJ per pulse, 10-kHz) in high-bandwidth, windowed...
Initial results of electrical and optical characterization Voxtel's first generation 256 x dual-mode silicon singlephoton avalanche diode (SPAD) image sensor are presented. The SPAD is a device capable sequential passive single-photon-counting (2D) active single-photon lidar (3D) range imaging at greater than 250 frames per second, full-frame. was developed in 180-nm complementary metal-oxide semiconductor imagesensor technology with pixel pitch 30 μm fill factor 9%; it achieves room...
In this paper we present the results of electrical and optical characterization silicon single-photon avalanche diode (SPAD) development at Voxel Inc. Measurements are made on a 40 x SPAD array test chip with column readout, inpixel integrated active quenching circuit, pixel enable/disable circuit ability to control dead time from 37 ns 1.5 μs. The pitch is 35 micrometers includes three different SPADs active-area diameters 8 micrometers, 10 14 micrometers. realized have breakdown voltage...
We continue our work on the design and implementation of multi-channel single photon detection systems for highly sensitive ultra-weak fluorescence signals, high-performance, multi-lane DNA sequencing instruments. A fiberized, 32-channel (SPD) module based avalanche diode (SPAD), model C30902S-DTC, from Perkin Elmer Optoelectronics (PKI) has been designed implemented. Unavailability high performance, large area SPAD arrays desire to performance counting drives us use individual diodes....
Single photon counting is the most sensitive method for detection of weak signals. However, it has rarely been used in DNA sequencing applications because its complexity. We present a fiberized 16-channel single (SPD) module based on avalanche photo diodes (APD). The are cooled at -20 °C and average dark count 700 c/s with APD operating 10V over-voltage. proposed system uses active quenching basic NAND gates delay integrated circuits (ICs) compact size, robust, easily portable requires only...
We present an analog silicon photomultiplier (SiPM) based on a standard 55 nm Bipolar-CMOS-DMOS (BCD) technology. The SiPM is composed of 16$\times$16 single-photon avalanche diodes (SPADs) and measures 0.29$\times$0.32 mm$^2$. Each SPAD cell passively quenched by monolithically integrated 3.3 V thick oxide transistor. measured gain 3.4$\times$ 10$^5$ at 5 excess bias voltage. timing resolution (SPTR) 185 ps the multiple-photon (MPTR) 120 integrate into co-axial light detection ranging...