A5065023718- Ion-surface interactions and analysis
- Electron and X-Ray Spectroscopy Techniques
- Graphene research and applications
- Diamond and Carbon-based Materials Research
- Nuclear physics research studies
- Advanced Electron Microscopy Techniques and Applications
- Advancements in Photolithography Techniques
- Physics of Superconductivity and Magnetism
- Nanowire Synthesis and Applications
- Advanced Condensed Matter Physics
- Integrated Circuits and Semiconductor Failure Analysis
- Magnetic and transport properties of perovskites and related materials
- X-ray Spectroscopy and Fluorescence Analysis
- Nuclear Physics and Applications
- Particle accelerators and beam dynamics
- Medical Imaging Techniques and Applications
- Radiation Therapy and Dosimetry
- Particle physics theoretical and experimental studies
- Supercapacitor Materials and Fabrication
- Force Microscopy Techniques and Applications
- Advanced NMR Techniques and Applications
- Quantum Dots Synthesis And Properties
- Nanopore and Nanochannel Transport Studies
- Lanthanide and Transition Metal Complexes
- Silicon Carbide Semiconductor Technologies
Raith (Germany)
2016-2024
University of Florida
2011-2016
Florida State University
2005-2006
Buffalo State University
2000-2002
We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- 6H-SiC. The presented is as easy ion implanting regions where layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC. find that implantation SiC lowers TG, allowing at temperatures TG pristine above implanted This results in an approach patterning device structures ranging from couple tens nanometers microns size without using conventional...
Measurements of the $N=28$ isotones $^{42}\mathrm{Si}$, $^{43}\mathrm{P}$, and $^{44}\mathrm{S}$ using one- two-proton knockout reactions from radioactive beam nuclei $^{46}\mathrm{Ar}$ are reported. The reaction cross sections for populating $^{42}\mathrm{Si}$ $^{43}\mathrm{P}$ a 184 keV \ensuremath{\gamma}-ray observed in establish that ${d}_{3/2}$ ${s}_{1/2}$ proton orbits nearly degenerate these there is substantial $Z=14$ subshell closure separating two ${d}_{5/2}$ orbit. increase...
${}^{99}\mathrm{Ru}$ M\"ossbauer effect measurements at 4.2, 23, 30, and 40 K show that the hyperfine magnetic field vanishes near 30 K, lower than superconducting onset temperature of 45 in ${\mathrm{Sr}}_{2}{\mathrm{YRu}}_{0.95}{\mathrm{Cu}}_{0.05}{\mathrm{O}}_{6}.$ The data confirm superconductivity homogeneous order coexist. measured 4.2 is 58.5(0.8) T. well-resolved set 18 lines measurement enabled a determination new value, -0.293(0.005) nm, for nuclear moment 3/2 state...
A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas multi-ion beam lithography subsequently converted few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted without elevating the temperature surrounding substrate. Samples were characterized using Raman spectroscopy, scattering/channeling, SEM, AFM, from which degree graphitization was...
Views Icon Article contents Figures & tables Video Audio Supplementary Data Peer Review Share Twitter Facebook Reddit LinkedIn Tools Reprints and Permissions Cite Search Site Citation Sven Bauerdick, Lars Bruchhaus, Paul Mazarov, Achim Nadzeyka, Ralf Jede, Joel Fridmann, Jason E. Sanabia, Brent Gila, Bill R. Appleton; Multispecies focused ion beam lithography system its applications. J. Vac. Sci. Technol. B 1 November 2013; 31 (6): 06F404. https://doi.org/10.1116/1.4824327 Download citation...
Excited states in $^{20}\mathrm{O}$ were populated the reaction $^{10}\mathrm{Be}(^{14}\mathrm{C},\ensuremath{\alpha})$ at Florida State University (FSU). Charged particles detected with a particle telescope consisting of 4 annularly segmented Si surface barrier detectors and $\ensuremath{\gamma}$ radiation was FSU detector array. Five new observed below 6 MeV from $\ensuremath{\alpha}\mathrm{\text{\ensuremath{-}}}\ensuremath{\gamma}$...
The hyperfine magnetic field in the ferromagnetic metal, ${\mathrm{SrRuO}}_{3},$ has been measured from 4.2 to 166.3 K by ${}^{99}\mathrm{Ru}$ Mossbauer effect. at is determined be 33.0(0.4) T with an isomer shift of -0.33(.02) mm/s. Curie temperature 162(2) for a polycrystalline sample. This consistent determination Cao et al. [Phys. Rev. B 56, 321 (1997)] ${T}_{C}=165\mathrm{K}$ single crystal. effect full width half maximum linewidth 166.3(0.1) K, above temperature, as narrow natural...
In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control quantity quality of graphene (G), few-layer (FLG), other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations Si− plus C− Au+ ions c-SiC showed both thickness amorphous layer formed by damage doping effect implanted Au enhance formation G FLG during PLA....
A reverse engineering approach to scanning electron microscope (SEM) imaging of neuronal architecture provides largearea maps a sample, which links the function cell with its location in tissue.The Chipscanner's laser interferometer stage and field-of-view mapping allow high-resolution SEM images be stitched together.This workflow produces accurate, tissue over biologically relevant length scales reasonable time frames.A 2.5 × 1.8 mm mouse spinal cord resin section was imaged less than 24...
The University of Florida (UF) have collaborated with Raith to develop a version the ionLiNE IBL system that has capability deliver multi‐ion species in addition Ga ions normally available. UF is currently equipped AuSi liquid metal alloy ion source (LMAIS) and ExB filter making it capable delivering Au Si clusters for beam processing. Other LMAIS systems could be developed future other species. This high performance lithography, sputter profiling, maskless implantation, mixing, spatial...
Semiconductor ZnO and GaN nanowires have shown the ability to detect many types of gases, biological chemical species interest. In this review, we give some recent examples using these for pH sensing, glucose detection hydrogen at ppm levels. addition, new ion beam systems with nm resolution capability are now available. This opens up possibility directly writing doped regions into semi-insulating materials such as undoped GaAs or creation arrays channel transistors other active elements....
The 99Ru Mössbauer effect has been measured in a series of ruthenium nitrosyls at 4.2 K. isomer shifts (IS ≈ −0.20 mm s−1) for most the compounds are nearly equal and consistent with +2 charge ruthenium. However, IS K2[Ru(NO)Cl5], which is still Ru(II), much more negative = −0.43 s−1). This implies that ligand field strength stronger this compound than other compounds. Two broadened single lines or have small quadrupole interactions, but [Ru(NO)Cl(py)4](PF6)2, [Ru(NO)Br(py)4](PF6)2...
Fabricating first order gratings for laterally coupled distributed feedback (LC-DFB) lasers can be challenging due to aspect ratio dependent etching. Developments in focused ion beam (FIB) processing and source technology introduce the potential mill grating structures directly into a ridge waveguide (RWG) laser structure without requirement electron lithography inductively plasma In this work, we investigate suitability of using bismuth gold FIBs Bragg DFB diodes as well adjacent InP RWG...
${}^{99}\mathrm{Ru}$ M\"ossbauer effect measurements have been carried out at a temperature of 4.2 K on sample ${\mathrm{RuSr}}_{2}{\mathrm{GdCu}}_{2}{\mathrm{O}}_{8}$ with N\'eel ${T}_{N}=132\mathrm{K}$ and superconducting transition ${T}_{c}=45\mathrm{K}.$ The hyperfine magnetic field was determined to be 59.1(1.0) T the isomer shift measured +0.05(0.02) mm/s, determining valence state for single Ru site close +5. Mossbauer also show an electric quadrupole interaction...
Journal Article Advanced Ion Source Technology for High Resolution and Stable FIB Nanofabrication employing Gallium new Species Get access S Bauerdick, Bauerdick Raith GmbH, Konrad-Adenauer-Allee 8, 44263 Dortmund, Germany Search other works by this author on: Oxford Academic Google Scholar J E Sanabia, Sanabia America, Inc., 2805 Veterans Memorial Hwy., Ronkonkoma, NY 11779 P Mazarov, Mazarov Fridmann, Fridmann L Bruchhaus, Bruchhaus R Jede Microscopy Microanalysis, Volume 20, Issue S3, 1...
Abstract For large area, high resolution SEM imaging applications, such as integrated circuit (IC) reverse engineering and connectomics [1-3], instruments are limited by small, uncalibrated fields of view (FOVs) imprecise sample positioning. These limitations affect image capture throughput, requiring more stage drive time larger overlaps. Furthermore, these instrument introduce stitching errors in 4 dimensions the data, X, Y, Z I (signal intensity). Throughput cited challenges [2] software...
Extended abstract of a paper presented at Microscopy and Microanalysis 2012 in Phoenix, Arizona, USA, July 29 – August 2, 2012.