A5015320100- Graphene research and applications
- Nanowire Synthesis and Applications
- Carbon Nanotubes in Composites
- Organic Electronics and Photovoltaics
- Semiconductor materials and interfaces
- Thin-Film Transistor Technologies
- Conducting polymers and applications
- Ion-surface interactions and analysis
- Education, sociology, and vocational training
- Diamond and Carbon-based Materials Research
- Quantum and electron transport phenomena
- Chemical and Physical Properties of Materials
- CCD and CMOS Imaging Sensors
- French Urban and Social Studies
- Transition Metal Oxide Nanomaterials
- Quantum Dots Synthesis And Properties
- Silicon Carbide Semiconductor Technologies
- 2D Materials and Applications
- Organic Light-Emitting Diodes Research
- Molecular Junctions and Nanostructures
- Advanced biosensing and bioanalysis techniques
- Semiconductor materials and devices
- Advanced Sensor and Energy Harvesting Materials
- Advanced Memory and Neural Computing
- Advanced ceramic materials synthesis
Centre Max Weber
2021-2023
Université Lumière Lyon 2
2023
Université Claude Bernard Lyon 1
2021
University of Florida
2011-2016
University of Illinois Urbana-Champaign
2006
Using current-voltage (I-V) and capacitance-voltage (C-V) measurements, we report on the unusual physics promising technical applications associated with formation of Schottky barriers at interface a one-atom-thick zero-gap semiconductor (graphene) conventional semiconductors. When chemical vapor deposited graphene is transferred onto n-type Si, GaAs, 4H-SiC GaN substrates, there strong van der Waals attraction that accompanied by charge transfer across rectifying (Schottky) barrier....
We report on the p doping of graphene with polymer TFSA ((CF(3)SO(2))(2)NH). Modification decreases sheet resistance by 70%. Through such modification, we values as low 129 Ω, thus attaining comparable to those indium-tin oxide (ITO), while displaying superior environmental stability and preserving electrical properties over extended time scales. Electrical transport measurements reveal that, after doping, carrier density holes increases, consistent acceptor nature TFSA, mobility due...
Rectification and thermal stability of diodes formed at graphene/GaN interfaces have been investigated using Raman Spectroscopy temperature-dependent current-voltage measurements. The Schottky barriers between GaN mechanically transferred graphene display rectification that is preserved up to 550 K with the eventually becoming non-rectifying above 650 K. Upon cooling, show excellent recovery improved rectification. We attribute these effects graphene, which acts like an impenetrable barrier...
An improved process for graphene transfer was used to demonstrate high performance enabled vertical organic field effect transistors (G-VFETs). The reduces disorder and eliminates the polymeric residue that typically plagues transferred films. method also allows purposely creating pores in of a controlled areal density. Transconductance observed G-VFETs fabricated with continuous (pore-free) source electrode is attributed modulation contact barrier height between semiconductor due gate...
Electrodes based on printed networks of single-walled carbon nanotubes (SWNTs) are integrated with ultrathin layers the organic semiconductor pentacene to produce bendable, transparent thin-film transistors plastic substrates. The physical and structural properties SWNTs lead remarkably good electrical contacts pentacene. Optical transmittances ∼70%, device mobilities >0.5cm2V−1s−1, ON/OFF ratios >105 tensile strains as large 1.8% achieved in devices this type. These...
We describe a straightforward technique for selective graphene growth and nanoribbon production onto 4H- 6H-SiC. The presented is as easy ion implanting regions where layers are desired followed by annealing to 100 °C below the graphitization temperature (TG) of SiC. find that implantation SiC lowers TG, allowing at temperatures TG pristine above implanted This results in an approach patterning device structures ranging from couple tens nanometers microns size without using conventional...
A technique is presented to selectively graphitize regions of SiC by ion implantation and pulsed laser annealing (PLA). Nanoscale features are patterned over large areas multi-ion beam lithography subsequently converted few-layer graphene via PLA in air. Graphitization occurs only where ions have been implanted without elevating the temperature surrounding substrate. Samples were characterized using Raman spectroscopy, scattering/channeling, SEM, AFM, from which degree graphitization was...
Growth temperature induced changes in Al∕Fe thin film catalysts are examined for chemical vapor deposition of carbon nanotubes directly on metal substrates. The thickness, growth temperature, and supporting substrate affect the size density Fe catalyst nanoparticles which turn control diameter, length, single versus multiwalled nature nanotubes. Growths two substrates, Au Mo, using sputter deposited films compared by transmission scanning electron microscopy, Raman analyses. Striking...
Recent years have seen a resurgence of interest in crystalline silicon Schottky junction solar cells distinguished by the use low density electronic states (DOS) nanocarbons (nanotubes, graphene) as metal contacting Si. Recently, unprecedented modulation power conversion efficiency single material system has been demonstrated such gating. The gate field induced Fermi level shift low-DOS carbon serves to enhance built-in potential, while inversion layer at Si surface, regions remote from...
We present the first display panels exploiting nVerPix CN-VOLET technology that reduces pixel circuit of conventional AMOLED to two discrete components: switching transistor and CN-VOLET. This permits high aperture ratio bottom emission displays—as as 70% here— greatly simplifies manufacturing. Mono-color QVGA displays (6.4 cm diagonal) playing video will be shown.
Abstract With the vertical organic light-emitting transistor (VOLET), we introduce a promising solution that could significantly benefit manufacturing of displays, accelerating wide adoption flexible and printed electronics. The VOLET—like conventional, lateral channel, thin film transistors—is compatible with variety printing techniques as well substrates low-temperature processing. In combination these devices will enable more cost-effective approach to mass-production can dramatically...
Vertical, organic, light‐emitting transistors (VOLETs) combine three of the four essential components an active matrix lightemitting diode (AMOLED) pixel ‐ drive transistor, storage capacitor, and OLED stack into a single, highly‐stable, selfemissive structure. VOLETs can be manufactured on amorphous silicon (a‐Si) thin‐film transistor (TFT) backplanes to enable lowcost AMOLED displays with improved brightness lifetime characteristics. We report current status VOLET development prospective...
La scolarisation des jeunes migrants en France s’accompagne de leur catégorisation tant qu’élève « allophone » présentant besoins éducatifs particuliers vis-à-vis apprentissage la langue française. Issue d’une catégorie d’action publique, l’« allophonie est mobilisée par les enseignants du secondaire pour réifier figures l’étranger, réunissant conditions stigmatisation qui dépasse le cadre scolaire. Face à dont ils font l’objet, scolarisés mettent place stratégies d’adaptation discours,...
Partant du constat de la nécessité repenser manière dont est envisagée mobilité sociale, et notamment l’articulation entre ses dimensions subjectives objectives, cet article rend compte cas particulier des mobilités sociales en contexte migratoire. Il présente le parcours migratoire trois familles migrantes inégalement dotées, modalités selon lesquelles elles construisent un projet avant quitter leur pays, à leurs capitaux ressources se recomposent dans l’immigration. En décrivant les...