A5029721738- Silicon Carbide Semiconductor Technologies
- Semiconductor materials and devices
- Advancements in Semiconductor Devices and Circuit Design
- GaN-based semiconductor devices and materials
- Silicon and Solar Cell Technologies
- Advanced MEMS and NEMS Technologies
- HVDC Systems and Fault Protection
- Service-Oriented Architecture and Web Services
- Manufacturing Process and Optimization
- Semiconductor materials and interfaces
- Acoustic Wave Resonator Technologies
- Advanced Surface Polishing Techniques
- Laser Material Processing Techniques
- Inertial Sensor and Navigation
- Product Development and Customization
- Semiconductor Quantum Structures and Devices
- Business Process Modeling and Analysis
- Integrated Circuits and Semiconductor Failure Analysis
- Electrostatic Discharge in Electronics
- Advanced Measurement and Metrology Techniques
- Advanced Memory and Neural Computing
- Electromagnetic Compatibility and Noise Suppression
- Thin-Film Transistor Technologies
- Mobile Agent-Based Network Management
- Electrospun Nanofibers in Biomedical Applications
University of Hong Kong
1995-2025
Hong Kong University of Science and Technology
1995-2025
Daqo (China)
2022
China Academy of Engineering Physics
2010-2022
Dongfeng Motor (China)
2022
China Three Gorges Corporation (China)
2022
The First Affiliated Hospital, Sun Yat-sen University
2014-2020
Sun Yat-sen University
2014-2020
National Health and Family Planning Commission
2020
China Resources (China)
2018
With growing concern over world environmental problems and increasing legislative restriction on using lead lead-containing materials, a feasible replacement for lead-based piezoceramics is desperately needed. Herein, we report large piezoelectric strain (d33*) of 470 pm/V high Curie temperature (Tc) 243 °C in (Na0.5K0.5)NbO3-(Bi0.5Li0.5)TiO3-BaZrO3 lead-free ceramics by doping MnO2. Moreover, excellent stability also observed from room to 170 (430 at 100 370 °C). Thermally stimulated...
The long-term operational reliability of silicon carbide (SiC) MOSFETs needs to be further verified before they could replace counterparts in power applications. In this paper, the failure mechanism commercial 1.2-kV SiC MOFSETs under repetitive short-circuit (SC) tests has been investigated. Relatively low stress defined as bias voltage and short SC duration is imposed on devices, eliminating effect gate oxide degradation metal deterioration. generation hot holes confirmed by charge pumping...
In this paper, the long-term reliability of commercial 1.2-kV 4H-SiC MOFSETs under repetitive unclamped inductive switching stresses is evaluated experimentally. The degradation device characteristics, including threshold voltage V <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">th</sub> , drain leakage current I xmlns:xlink="http://www.w3.org/1999/xlink">dss</sub> and on-state resistance R xmlns:xlink="http://www.w3.org/1999/xlink">on</sub>...
A novel silicon carbide (SiC) trench MOSFET with floating/grounded junction barrier-controlled gate structure (FJB-MOS/GJB-MOS) is presented and investigated utilizing Sentaurus TCAD simulations. The split P+ region introduced beneath the could better shield oxide from high electric field in blocking mode, leading to an enhancement breakdown voltage while without significant degradation of other characteristics. As a result, FJB-MOS floating shielding exhibits higher figure merit related...
Mesenchymal stromal cells (MSCs) show potential for treating cardiovascular diseases, but their therapeutic efficacy exhibits significant heterogeneity depending on the tissue of origin. This study sought to identify an optimal source MSCs disease therapy. We demonstrated that Nestin was a suitable marker cardiac (Nes+cMSCs), which were identified by self-renewal ability, tri-lineage differentiation potential, and expression MSC markers. Furthermore, compared with bone marrow-derived...
The effect of interlayer confined water (ICW) in steel bridge deck pavement (SBDP) is often overlooked, yet it may substantially contribute to extensive cracking epoxy asphalt pavement. To cover the study gap this field, adhesion strength concrete (EAC) under ICW erosion was evaluated. Besides, action mechanism and stress characteristics at bottom SBDP were assessed. Sensitivity factors affecting impact also analysed. Findings revealed that failure mode EAC transformed from cohesive adhesive...
We propose and demonstrate that a EuO-induced top-gated graphene ferromagnetic junction can be simultaneously operated as spin filter well valve. attribute such remarkable result to coexistence of half-metal band common energy gap for opposite spins in graphene. show that, both the valve effectively controlled by back gate voltage, they survive practical metal contacts finite temperature. Specifically, larger single currents on-state reached with work functions similar graphene, operate at...
Flexible strain sensors have a wide range of applications in biomedical science, aerospace industry, portable devices, precise manufacturing, etc. However, the manufacturing processes most flexible previously reported usually required high costs and harsh experimental conditions. Besides, research interests are often focused on improving single attribute parameter while ignoring others. This work aims to propose simple method graphene-based with sensitivity fast response. Firstly, oxygen...
In this paper, we investigate the performance of three-phase ac-ac matrix converter (MC) utilizing novel superjunction (SJ) reverse-blocking (RB)-insulated gate bipolar transistor (IGBT) as switch elements for first time. The SJ RB-IGBT offers bidirectional blocking capability >1200 V by introducing a shorted-collector trench and n2-layer. exhibits conducting mode in on-state unipolar during turn-off. Therefore, both low voltage (Von) turnoff energy loss ( Eoff) can be obtained. delivers...
The trend to move toward the solid-state and repetitive pulsed power supply requires high-voltage, high-current, high-speed semiconductor devices, which makes an insulated gate bipolar transistor (IGBT) preferred for this application. However, as a device, IGBT is limited by switching speed loss. In paper, potential of silicon carbide (SiC) metal-oxide-semiconductor field-effect (MOSFET) application investigated. surge current capabilities 1.2-kV, 30-A commercial Si SiC MOSFET are...
Intravascular photoacoustic (IVPA) imaging technology enables the visualization of pathological characteristics (such as inflammation activities, lipid deposition) artery wall. Blood flushing is a necessary step in improving quality vivo IVPA imaging. But limited speed systems stretches their time, which an important obstacle clinical translations. In this paper, we report improvement IVPA/IVUS to 100 frames per second. The high-speed demonstrated rabbit , visualizing nanoparticles...
Cartilage lesion of the patellofemoral joint is a common and challenging disease knee an important cause anterior pain. There are many naturally occurring variations in anatomy congruence patella femoral trochlea. The purpose this study was to identify congruency that predispose cartilage lesions. Among patients who underwent arthroscopy our center from January 2005 December 2006, 111 with chronic lesions pain were selected as group, while 124 isolated meniscus rupture without control group....
By a self-terminating gate recess etching technique, normally-off fully recess-gated GaN metal–insulator–semiconductor field-effect transistor (MISFET) was fabricated using Al2O3/Si3N4 bilayer as dielectrics. Owing to the high breakdown electric field (∼10 MV/cm) of dielectrics, device exhibits large swing 18 V, threshold voltage 1.7 V (at ID = 100 µA/mm), maximum drain current 534 mA/mm, leakage lower than 20 nA/mm in whole swing, and OFF-state 1282 V. Furthermore, owing overdrive (VGS −...
Concurrent engineering (CE) is a methodology applied to product lifecycle development so that high quality, well designed products can be provided at lower prices and in less time.Many research works have been proposed for efficiently modeling of different domains CE.However, an integration these with consistent data flow absent still great demand industry.In this paper, we present generic framework semantic feature model knowledge representation reasoning across CE.An implementation the...
Traveling-wave ultrasonic micromotor is a promising technology for microactuation and nanopositioning. A special designed annular stator was proposed with the combination of two separate buffer structures to achieve high performance. propagation moving antinodes observed analyzed. The fabricated exhibits large displacement $4.71 μm at 1 V quality factor 220 central frequency 101.6 kHz. assembled rotor actuated, controllable rotate speed achieved. measured maximum torque reached $2.63 μNm 1.3...
Ultrahigh-voltage 4H-silicon carbide (SiC) gate turn-OFF thyristors (GTOs), with multiple space-modulated buffer trench (SMBT) regions on the traditional three-step junction termination extension (3S-JTE), have been investigated and fabricated. With adoption of these SMBT regions, electric field crowding near edges is effectively suppressed sensitivity edge maximum etching depths greatly reduced. The fabricated SiC GTOs an improved 3S-JTE can accomplish a high blocking capability 10 kV,...
Abstract Irradiation damage is a key issue for the reliability of semiconductor devices under extreme environments. For decades, ionizing‐irradiation‐induced in transistors with silica‐silicon (SiO 2 ‐Si) structures at room temperature has been modeled by uniform generation centers bulk silica region through capture irradiation‐induced holes, and an irreversible conversion from to P b SiO /Si interface reactions hydrogen molecules (H ). However, traditional model fails explain...
An edge termination method, referred to as guard-ring-assisted multistep junction extension (MS-GR-JTE), is presented for ultrahigh voltage silicon carbide (SiC) power devices. In comparison with other JTEs, the MS-GR-JTE creates a step electric field (EF) distribution greatly reduced peak EF at corners and edges of device, resulting in superior breakdown (BV) performance wide tolerances JTE dose SiC surface charges. According numerical simulations based on 100-μm-thick epilayer, an...
The AlGaN/GaN heterostructure field-effect transistors with different gate lengths were fabricated. Based on the chosen of Hamiltonian system and additional polarization charges, two methods to calculate PCF scattering by theory presented. By comparing measured calculated source-drain resistances, effect potential was confirmed.
A piezoelectric traveling-wave ultrasonic micromotor at the millimeter scale with adjustable magnetic preloading and precise stepping control is proposed. This consists of a well-designed annular stator 4 mm in diameter an innovative rotor mechanism using attraction, which first achieved such small system. With 10-V AC actuating voltage, maximum speed reaches 9900 rpm torque 37.0 μNm obtained. Stable startup characteristic accurate are also achieved. The minimum angle 10°, deviation less...